NPT IGBT Modules
Symbol Conditions Units
IGBT
Inverse Diode
T
C
= 25
oC
, unless otherwise specified
V
CES
V
I
C
T
C
= 25(80)
oC
A
I
CRM
A
V
GES
T
Vj,
(T
stg
)
V
isol
T
C
= 25(80)
oC, tP =1ms
AC, 1min
IF = -IC
IFRM
IFSM
T
C
= 25(80)
oC
T
C
= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
1200
100(90)
200(180)
+20
40...+150(125)
2500
200(180)
720
V
oC
V
A
A
A
TOPERATION <
_Tstg
Freewheeling diode
IF = -IC
IFRM
IFSM
__
T
C
= 25(80)
oC
T
C
= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
95(65)
130(90)
200(180)
1100
A
A
A
SID100N12
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Values
SID100N12
NPT IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
V
GE(th)
V
GE
= V
CE
, I
C
=2mA 4.5 5.5 6.5 V
I
CES
V
GE
= 0; V
CE
= V
CES
; T
j
= 25(125)
oC
0.1 0.3 mA
V
CE(TO)
T
j
= 25(125)
oC
1.4(1.6) 1.6(1.8) V
r
CE
V
GE
= 15V, T
j
= 25(125)
oC
14.6(20)18.6(25.3) m
V
CE(sat)
I
C
=75A; V
GE
= 15V; chip level 2.5(3.1) 3(3.7) V
C
ies
under following conditions 5 6.6
C
oes
V
GE
= 0, V
CE
= 25V, f = 1MHz 0.72 0.9
C
res
0.38 0.5
L
CE
30 nH
R
CC'+EE'
res., terminal-chip T
C
= 25(125)
oC
0.75(1) m
under following conditions:
t
d(on)
V
CC
= 600V, I
C
= 75A 30 60 ns
t
r
R
Gon
= R
Goff
=15 , T
j
= 125
oC
70 140 ns
t
d(off)
V
GE
= ± 15V 450 600 ns
t
f
70 90 ns
E
on
(E
off
) 10(8) mJ
Inverse Diode under following conditions:
V
F
= V
EC
I
F
= 75A; V
GE
= 0V; T
j
= 25(125)
oC
2(1.8) 2.5 V
V
(TO)
T
j
= 125
oC
1.2 V
r
T
T
j
= 125
oC
12 15 m
I
RRM
I
F
= 75A; T
j
= 25(125)
oC
27(40) A
Q
rr
di/dt = 800A/us uC
E
rr
V
GE
= V mJ
FWD under following conditions:
V
F
= V
EC
I
F
= 75A; V
GE
= 0V; T
j
= 25(125)
oC
1.85(1.6) 2.2 V
V
(TO)
T
j
= 125
oC
1.2 V
r
T
T
j
= 125
oC
9 11 m
I
RRM
I
F
=75A; T
j
= 25
oC
30(45) A
Q
rr
di/dt = A/us uC
E
rr
V
GE
= V mJ
Thermal Characteristics
R
th(j-c)
per IGBT 0.18 K/W
R
th(j-c)D
per Inverse Diode 0.5 K/W
R
th(j-c)FD
per FWD 0.36 K/W
R
th(c-s)
per module 0.05 K/W
Mechanical Data
M
s
to heatsink M6 3 5 Nm
M
t
to terminals M5 2.5 5 Nm
w 160 g
T
C
= 25
oC
, unless otherwise specified
nF
3(10)
3.5(11)