TSOP48..LL1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP48..LL1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP48..LL1 is the standard IR remote control receiver series, supporting all major transmission codes. 1 2 16644 3 Features * Photo detector and preamplifier in one package * Internal filter for PCM frequency * Improved shielding against electrical field disturbance * TTL and CMOS compatibility * Output active low * Low power consumption Parts Table Special Features * Improved immunity against ambient light * Suitable burst length 10 cycles/burst Mechanical Data Pinning: 1 = OUT, 2 = GND, 3 = VS Part Carrier Frequency TSOP4830LL1 30 kHz TSOP4833LL1 33 kHz TSOP4836LL1 36 kHz TSOP4837LL1 36.7 kHz TSOP4838LL1 38 kHz TSOP4840LL1 40 kHz TSOP4856LL1 56 kHz Block Diagram 16833 3 30 k VS 1 Input AGC Band Pass Demodulator OUT 2 PIN Control Circuit Document Number 82238 Rev. 1, 03-Jul-03 GND www.vishay.com 1 TSOP48..LL1 VISHAY Vishay Semiconductors Application Circuit 16842 R1 = 100 Circuit Transmitter TSOPxxxx with TSALxxxx VS +VS C1 = 4.7 F OUT GND C VO GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 3.3 V by the external circuit. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Supply Voltage Parameter (Pin 3) Test condition VS - 0.3 to + 6.0 V Supply Current (Pin 3) IS 5 mA Output Voltage (Pin 1) VO - 0.3 to + 6.0 V Output Current (Pin 1) IO 5 mA Tj 100 C Storage Temperature Range Tstg - 25 to + 85 C Operating Temperature Range Tamb - 25 to + 85 C Junction Temperature Unit Power Consumption (Tamb 85 C) Ptot 50 mW Soldering Temperature t5s Tsd 260 C Electrical and Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 3) Symbol Min Typ. Max Unit VS = 5 V, Ev = 0 Test condition ISD 0.8 1.2 1.5 mA VS = 5 V, Ev = 40 klx, sunlight ISH Supply Voltage VS Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Irradiance (56 kHz) Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min www.vishay.com 2 d 1.5 4.5 mA 5.5 35 0.3 V m 250 mV 0.5 mW/m2 Document Number 82238 Rev. 1, 03-Jul-03 TSOP48..LL1 VISHAY Vishay Semiconductors Parameter Test condition Symbol Irradiance (30-40 kHz) Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Ee min Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max Directivity Angle of half transmission distance Min Typ. Max Unit 0.2 0.4 mW/m2 30 W/m2 1/2 45 deg Typical Characteristics (Tamb = 25 C unless otherwise specified) Ee Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) Ee Optical Test Signal 600 ms t tpi * T = 60 ms T * tpi w 10/fo is recommended for optimal function VO 16110 Output Signal 1) 2) VOH t 600 ms VO 94 8134 Output Signal, ( see Fig.4 ) VOH 7/f0 < td < 15/f0 tpi-5/f0 < tpo < tpi+6/f0 VOL VOL tpo2 ) td1 ) Ton t 1.0 Output Pulse t po - Output Pulse Width ( ms ) 0.9 0.8 Input Burst Duration 0.7 0.6 0.5 0.4 0.3 l = 950 nm, optical test signal, fig.1 0.2 0.1 0.0 0.1 1.0 16908 10.0 100.0 1000.010000.0 Ee - Irradiance ( mW/m2 ) Figure 2. Pulse Length and Sensitivity in Dark Ambient Document Number 82238 Rev. 1, 03-Jul-03 t Figure 3. Output Function Ton ,Toff - Output Pulse Width ( ms ) Figure 1. Output Function Toff 16909 1.0 0.9 0.8 Ton 0.7 0.6 0.5 Toff 0.4 0.3 l = 950 nm, optical test signal, fig.3 0.2 0.1 0.0 0.1 1.0 10.0 100.0 1000.010000.0 Ee - Irradiance ( mW/m2 ) Figure 4. Output Pulse Diagram www.vishay.com 3 TSOP48..LL1 VISHAY Vishay Semiconductors E e min- Threshold Irradiance ( mW/m 2 ) E e min / E e - Rel. Responsivity 1.2 1.0 0.8 0.6 0.4 f = f0"5% Df ( 3dB ) = f0/10 0.2 0.0 0.7 0.9 1.1 Max. Envelope Duty Cycle Ee min- Threshold Irradiance ( mW/m 2 ) 1.5 Ambient, l = 950 nm 1.0 0.5 0.10 1.00 10.00 1.2 2.0 1.6 0.6 0.5 0.4 0.3 0.2 f = 38 kHz, Ee = 2 mW/m2 E - Ambient DC Irradiance 0.0 100.00 (W/m2) 0 2.0 f = fo f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 www.vishay.com 40 60 80 100 120 Figure 9. Max. Envelope Duty Cycle vs. Burstlength 1000.0 DVsRMS - AC Voltage on DC Supply Voltage (mV) 20 Burst Length ( number of cycles / burst ) 16913 Ee min- Threshold Irradiance ( mW/m 2 ) Ee min- Threshold Irradiance ( mW/m 2 ) 0.8 0.1 0.0 0.01 Figure 7. Sensitivity vs. Supply Voltage Disturbances 4 0.4 E - Field Strength of Disturbance ( kV/m ) Figure 8. Sensitivity vs. Electric Field Disturbances Figure 6. Sensitivity in Bright Ambient 16912 0.0 0.7 2.0 1.5 0.4 0.8 Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 2.5 16911 0.8 0.0 4.0 3.0 1.2 94 8147 Figure 5. Frequency Dependence of Responsivity 3.5 f(E) = f0 1.6 1.3 f/f0 - Relative Frequency 16925 2.0 16918 0.6 0.5 Sensitivity in dark ambient 0.4 0.3 0.2 0.1 0.0 -30 -15 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( qC ) Figure 10. Sensitivity vs. Ambient Temperature Document Number 82238 Rev. 1, 03-Jul-03 TSOP48..LL1 VISHAY Vishay Semiconductors S ( l ) rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 850 950 1050 1150 l - Wavelength ( nm ) 16919 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance Figure 12. Directivity Document Number 82238 Rev. 1, 03-Jul-03 www.vishay.com 5 TSOP48..LL1 VISHAY Vishay Semiconductors www.vishay.com 6 IR Signal from fluorescent lamp with low modulation 0 5 10 15 20 Time ( ms ) 16920 Figure 13. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal The circuit of the TSOP48..LL1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: * Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). * Burst length should be 10 cycles/burst or longer. * After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. * For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should be at least 4 times longer than the burst. * Up to 800 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code (repetitive pulse), NEC Code (repetitive data), Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code, Sony Code. When a disturbance signal is applied to the TSOP48..LL1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP48..LL1 are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signal at 38 kHz or at any other frequency * Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 13 or Figure 14). IR Signal Suitable Data Format 0 16921 5 10 Time ( ms ) 15 20 Figure 14. IR Signal from Fluorescent Lamp with high Modulation Document Number 82238 Rev. 1, 03-Jul-03 VISHAY TSOP48..LL1 Vishay Semiconductors Package Dimensions in mm 16845 Document Number 82238 Rev. 1, 03-Jul-03 www.vishay.com 7 TSOP48..LL1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 82238 Rev. 1, 03-Jul-03