2004-03-05
Page 1
HITFETÒ II.Generation BTS 118 D
Smart Lowside Power Switch
Product Summary
Drain source voltage VDS 42 V
On-state resistance RDS
(
on
)
100 mW
Nominal load current ID
(
Nom
)
2.4 A
Clamping energy E
A
S2 J
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
auto restart
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P-TO252-3-11
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
2004-03-05
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BTS 118 D
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage VDS 42 V
Supply voltage for full short circuit protection Vbb
(
SC
)
42
Continuous input voltage1) VIN -0.2 2) ... +10
Continuous input current2)
-0.2V £ VIN £ 10V
VIN < -0.2V or VIN > 10V
IIN
self limited
| IIN | £ 2
mA
Operating temperature T
j
-40 ...+150 °C
Storage temperature Tst
g
-55 ... +150
Power dissipation 5)
TC = 85 °C
6cm2 cooling area , TA = 85 °C
Ptot
21
1.1
W
Unclamped single pulse inductive energy 2) E
A
S2J
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
RL = 6 W, VA = 13.5 V
VLD 58 V
VESD 2 kV
40/150/56
Thermal resistance
junction - case: RthJC 3 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm2 cooling area 4)
RthJA
115
55
1For input voltages beyond these limits I
IN has to be limited.
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by RthJA and Rds(on)
Electrostatic discharge voltage2)
(Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
MSL1
2004-03-05
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BTS 118 D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
VDS(AZ) 42 - 55 V
Off-state drain current
Tj = -40...+85 °C, VDS = 32 V , VIN = 0 V
Tj = 150 °C
IDSS
-
-
1.5
4
8
12
µA
Input threshold voltage
ID = 0.6 mA, Tj = 25 °C
ID = 0.6 mA, Tj = 150 °C
VIN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current IIN
(
on
)
- 10 30 µA
On-state resistance
VIN = 5 V, ID = 2.2 A, Tj = 25 °C
VIN = 5 V, ID = 2.2 A, Tj = 150 °C
RDS(on)
-
-
90
160
120
240
mW
On-state resistance
VIN = 10 V, ID = 2.2 A, Tj = 25 °C
VIN = 10 V, ID = 2.2 A, Tj = 150 °C
RDS(on)
-
-
70
130
100
200
Nominal load current 5)
Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1)
ID(Nom) 2.4 3.2 - A
Nominal load current 5)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
ID(ISO) 3.5 5 -
Current limit (active if VDS>2.5 V)2)
VIN = 10 V, VDS = 12 V, tm = 200 µs
ID(lim) 10 15 20
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by RthJA and Rds(on)
2004-03-05
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BTS 118 D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
ton - 40 100 µs
Turn-off time VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
toff - 70 100
Slew rate on 70 to 50% Vbb:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
-dVDS/dton - 0.4 1.5 V/µs
Slew rate off 50 to 70% Vbb:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
dVDS/dtoff - 0.6 1.5
Protection Functions1)
Thermal overload trip temperature T
j
t150 175 - °C
Thermal hysteresis 2) DT
j
t- 10 - K
Input current protection mode
Tj = 150 °C
IIN(Prot) - 100 300 µA
Unclamped single pulse inductive energy 2)
ID = 2.2 A, Tj = 25 °C, Vbb = 12 V
EAS 2 - - J
Inverse Diode
Inverse diode forward voltage
IF = 10.9 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
VSD - 1.0 1.5 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
2004-03-05
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BTS 118 D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZD
S
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Source/
Ground
Input
VIN
IIN
IDS
Tj
2004-03-05
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BTS 118 D
1 Maximum allowable power dissipation
Ptot = f(TC) resp.
Ptot = f(TA) @ RthJA=55 K/W
-50 -25 0 25 50 75 100 °C 150
TA;TC
0
0.5
1
1.5
2
W
3
P
tot
SMD @ 6cm2
Rthjc = 3 K/W
2 On-state resistance
RON = f(Tj); ID=2.2A; VIN=10V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
25
50
75
100
125
150
175
mW
225
RDS(on)
typ.
max.
3 On-state resistance
RON = f(Tj); ID=2.2A; VIN=5V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
25
50
75
100
125
150
175
200
mW
250
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V
-50 -25 0 25 50 75 100 °C 150
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
V
GS(th)
2004-03-05
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BTS 118 D
5 Typ. transfer characteristics
ID=f(VIN); VDS=12V; TJstart=25°C
12345678V10
VIN
0
2
4
6
8
10
12
A
16
ID
6 Typ. short circuit current
ID(lim) = f(Tj); VDS=12V
Parameter: VIN
-50 -25 0 25 50 75 100 125 °C 175
Tj
10
12
14
16
18
20
A
24
ID
5V
Vin=10V
7 Typ. output characteristics
ID=f(VDS); TJstart=25°C
Parameter: VIN
01234V6
VDS
0
2
4
6
8
10
12
14
16
A
20
I
D
3V
4V
5V
6V
7V
Vin=10V
8 Off-state drain current
IDSS = f(Tj)
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
1
2
3
4
5
6
7
8
9
10
11
µA
13
IDSS
typ.
max.
2004-03-05
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BTS 118 D
9 Typ. overload current
ID(lim) = f(t), Vbb=12 V, no heatsink
Parameter: Tjstart
0 0.5 1 1.5 2 2.5 3 3.5 4 ms 5
t
0
5
10
15
A
25
ID(lim)
-40°C
+150°C
85°C
25°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1
10 2 10 4
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
0 0.1 0.2 0.3 0.4 ms 0.6
t
0
5
10
15
A
25
ID(lim)
-40°C
25°C
85°C
150°C
2004-03-05
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BTS 118 D
Package Ordering Code
P-TO-252-3-11 Q67060-S6505-A5
5.4
±0.1
-0.05
6.5
+0.15
A
±0.5
9.98
6.22-0.2
1±0.1
±0.15
0.8
0.15 max.
±0.1
per side 0.75
2.28
4.57
+0.08
-0.04
0.5
2.3
-0.10
+0.05
B
0.51 min.
+0.08
-0.04
0.5
0...0.15
B
A0.25
M
0.1
All metal surfaces tin plated, except area of cut.
3x
(5)
(4.24)
-0.01
+0.20
0.9
B
Page 10 2004-03-05
BTS 118D
Revision Hist ory : 2004-03 -05
Previous version : 2003-04-22
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page Subjects (major changes since last revision)
2, 4 Footnote 2 extended to Vin<0V, Etot and ∆TjT
2, 3 Footnote 5 implemented to Ptot, ID(nom) and ID(ISO)
2 ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.
standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4
2 Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1
2 climatic category changed from DIN IEC 68-1 to DIN EN 60068-1
3VIN(th) test conditions from ID=0.3mA to ID=0.6mA
