1SR153-400 Diodes Rectifier diode 1SR153-400 zApplications For fast rectifier zExternal dimensions (Unit : mm) CATHODEBAND (SILVER) 0.60.1 4 zFeatures 1) Cylindrical mold type. (MSR) 2) High reliability. 3) High switching speed. 3.00.2 291 291 2.50.2 ROHM : MSR zConstruction Silicon diffused junction Manufacture Date zTaping dimensions (Unit : mm) BROWN Symbol A H2 BLUE E C L2 F H1 T-31 52.41.5 +0.4 T-32 26.0 0 T-31 5.00.5 B T-31 5.00.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A1.2 E T-32 1/2A0.4 T-31 0.7 T-32 0.2 max. T-31 H1 6.00.5 T-32 T-31 H2 5.00.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. H1(6mm)BROWN B L1 Standard dimension value(mm) D zAbsolute maximum ratings (Ta=25C) Parameter Maximum peak surge reverse voltage Surge reverse voltage Average rectified forward current (*1) Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Limits 500 400 1 30 150 -40 to +150 Symbol VRMS VR Io IFSM Tj Tstg Unit V V A A (*1)Mounting on alumina board zElectrical characteristics (Ta=25C) Param eter Sym bol Min. Typ. Max. Unit VF - - 1.3 V IF =0.8A R evers e current IR - - 10 uA VR =400V R evers e recovery tim e trr - - 0.4 us IF=10mA,IR =10mA,Irr=1mA Forward voltage Conditions Rev.B 1/3 1SR153-400 Diodes zElectrical characteristic curves (Ta=25C) 1000000 1000 Ta=150 Ta=75 10 Ta=125 f=1MHz Ta=25 Ta=-25 10 10000 Ta=75 1000 Ta=25 100 Ta=-25 10 1 200 400 600 800 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1200 1170 1 0.1 1 0 0 100 200 300 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 400 1130 AVE:1139.8mV 800 700 600 500 AVE:203.11nA 400 300 200 4 3 2 Ct DISPERSION MAP IR DISPERSION MAP 100 AVE:42.0A 50 Ta=25 IF=10mA IR=10mA Irr=0.10*IR n=10pcs 230 220 210 200 190 AVE:200.7ns 180 170 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms RESERVE RECOVERY TIME:trr(ns) 1cyc 30 AVE:6.95pF 5 0 240 100 6 1 VF DISPERSION MAP Ifsm 25 Ta=25 f=1MHz VR=0V n=10pcs 7 0 150 20 8 100 1120 15 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 1140 10 10 Ta=25 VR=400V n=30pcs 900 1150 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 Ta=25 IF=1A n=30pcs 1160 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 Ta=150 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100000 Ifsm 80 8.3ms 8.3ms 1cyc 60 40 20 0 160 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board Ifs t 50 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 IM=10mA 1ms 3 IF=0.5A time 2.5 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 300us Rth(j-c) 10 D=1/2 2 DC Sin(180) 1.5 1 1 0.5 0.1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.B 2 2/3 1SR153-400 Diodes 0.1 REVERSE POWER DISSIPATION:PR (W) 0.08 Sin(180) 0.06 D=1/2 0.04 DC 0.02 3 0A 0V 2.5 2 DC 1.5 Io t VR D=t/T VR=200V T Tj=150 D=1/2 1 0.5 Sin(180) 0 0 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 Io 0A 0V 2.5 t 2 DC 1.5 VR D=t/T VR=200V T Tj=150 D=1/2 1 Sin(180) 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE:20.6kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1