25
VTB Process Photodiode VTB1012BH, 1013BH
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a “flat”
window, dual lead TO -46 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have ver y
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP A CTIVE AREA : .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem per at u r e: -4 0°C t o 11 0°C
Oper ati ng Temp er atur e: -4 0°C t o 11 0°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB1012BH VTB1013BH UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 0.8 1.3 0.8 1.3 µA
TC ISC ISC Temperature Coefficient 2850 K .02 .08 .02 .08 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 .31 .31 nF
λrange Spectral Application Range 330 720 330 720 nm
λpSpectral Response - Peak 580 580 nm
VBR Breakdown Voltage 2 40 2 4 0 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±35 ±35 Degrees
NEP Noise Equiv alent Power 5.3 x 10-14 (Typ.) 1.1 x 10-14 (Typ.)
D* S pecific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
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