VTB Process Photodiode VTB1012BH, 1013BH PACKAGE DIMENSIONS inch (mm) CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a "flat" window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC R SH CJ CHARACTERISTIC Typ. 0.8 1.3 Max. Min. Typ. 0.8 1.3 UNITS Max. H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 G RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. D* Min. VTB1013BH Short Circuit Current range NEP VTB1012BH TEST CONDITIONS .02 .08 .02 100 330 720 20 330 580 2 40 A .08 2 pA nm 580 nm 40 V 35 Degrees Noise Equivalent Power 5.3 x 10 -14 (Typ.) 1.1 x 10-14 (Typ.) Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) W Hz cm Hz W Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 35 720 %/C Phone: 877-734-6786 Fax: 450-424-3413 25 www.excelitas.com