HL6319G - Renesas Technology / Hitachi Semiconductor

HL6319G/20G

AlGaInP Laser Diodes

ADE-208-479D (Z)

5th Edition

Dec. 2000

Description

The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.

They are suitable as light sources for laser levelers and optical equipment for measurement.

Application

• Laser levelers

• Measurement

Features

• Visible light output: 635 nm Typ (nearly equal to He-Ne gas laser)

• Optical output power: 10 mW CW

• Low operating current: 95 mA Max

• Low operating voltage: 2.7 V Max

• TM mode oscillation

LD LDPD PD

1 1

3 3

Internal Circuit

• HL6319G Internal Circuit

• HL6320G

Package Type

• HL6319G/20G: G2

HL6319G/20G

Absolute Maximum Ratings (TC = 25°C)

Item Symbol Rated Value Unit

Optical output power PO10 mW

LD reverse voltage VR(LD) 2V

PD reverse voltage VR(PD) 30 V

Operating temperature Topr –10 to +50 °C

Storage temperature Tstg –40 to +85 °C

Optical and Electrical Characteristics (TC = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Optical output power PO10 — — mW Kink free

Threshold current Ith 20 50 75 mA

Operating current IOP —7095mA P

= 10 mW

Operating voltage VOP — — 2.7 V PO = 10 mW

Slope efficiency ηs 0.3 0.5 0.7 mW/mA 6 (mW) / (I(8mW) – I(2mW))

Beam divergence

parallel to the junction θ// 5 8 11 deg. PO = 10 mW

Beam divergence

parpendicular to the junction θ⊥ 25 31 37 deg. PO = 10 mW

Astigmatism AS—5 —µmP

= 10 mW, NA = 0.55

Lasing wavelength λp 625 635 640 nm PO = 10 mW

Monitor current IS0.05 0.17 0.30 mA PO = 10 mW, VR(PD) = 5 V

HL6319G/20G

Typical Characteristic Curves

Optical output power, PO (mW)

00100 200

Foward current, IF (mA)

50°C

25°C

Optical Output Power vs. Foward Current

Optical output power, PO (mW)

Monitor current, IS (mA)

0.20

0.15

0.10

0.05

0 246810

R(PD) = 5 V

TC = 25°C

Monitor Current vs. Optical Output Power

TC = −10°C

0.2

0.4

0.6

0.8

1.0

−40 −20 0 20 40

Angle, θ (deg.)

Relative intensity

0Parallel

Perpendicular

Far Field Pattern

PO = 10 mW

TC = 25°C

−30 −10 10 30

Lasing Spectrum

Wavelength, λp (nm)

625 630 635 640 645 650

Relative intensity

TC = 25°C

PO = 10 mW

PO = 1 mW

PO = 5 mW

HL6319G/20G

Typical Characteristic Curves (cont)

Case temperature, TC (°C) Case temperature, TC (°C)

−10 0 10 20 30 40

200

100

Threshould current, Ith (mA)

Threshold Current vs. Case Temperature

Slope Efficiency vs. Case Temperature

−10 0 4010 20 30 50

Slope efficiency, ηs (mW/mA)

0.2

0.4

0.6

0.8

1.0

Monitor Current vs. Case Temperature

Case temperature, TC (°C)

−10 010

20 30 40

Monitor current, IS (mA)

0.1

0.2

0.3

0.4

Lasing Wavelength vs. Case Temperature

01020304050

Lasing wavelength, λp (nm)

630

635

645

650

640

−10 Case temperature, TC (°C)

PO = 10 mW

VR(PD) = 5 V

HL6319G/20G

Typical Characteristic Curves (cont)

002 64 810

Optical output power, PO (mW)

Astigmastism, AS (µm)

Astigmastism vs. Optical Output Power

10 TC = 25°C

NA = 0.55

Polarization Ratio vs. Optical Output Power

Optical output power, PO (mW)

0246810

Polarization ratio

200

400

600

800 TC = 25°C

NA = 0.4

100

Survival rate (%)

Applied voltage (kV)

Electrostatic Destruction (Reverse)

0231

Reverse(ANSI method)

N = 5 pcs

judgment : ∆IO ≤ 10%

0 500 1000

100

Survival rate (%)

Applied voltage (V)

Electrostatic Destruction (Forward)

Forward(ANSI method)

N = 5 pcs

judgment : ∆IO ≤ 10%

HL6319G/20G

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LD/G2

—

1.1 g

Unit: mm

123

9.0

–0.025

φ1.0 ± 0.1

0.4

+0.1

–0

(0.65)

(90°)

7.2

+0.3

–0.2

φ6.2 ± 0.2

( 2.0)

Emitting Point

2.45

1.5 ± 0.1

9 ± 1

3 – 0.45 ± 0.1

3.5 ± 0.2 0.3

Glass

φ2.54 ± 0.35

HL6319G/20G

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The

laser beam shall be observed or adjusted through infrared camera or equivalent.

HL6319G/20G

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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(Taipei Branch Office)

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