BDP947_BDP949_BDP953 Silicon NPN Transistors * For AF driver and output stages 4 * High collector current 3 2 * High current gain 1 * Low collector-emitter saturation voltage * Complementary types: BDP948, BDP950, BDP954 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223 BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223 BDP953 BDP953 1=B 2=C 3=E 4=C - - SOT223 1 Package 2011-10-05 BDP947_BDP949_BDP953 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BDP947 45 BDP949 60 BDP953 100 Collector-base voltage Unit VCBO BDP947 45 BDP949 60 BDP953 120 Emitter-base voltage VEBO 5 Collector current IC 3 Peak collector current, tp 10 ms ICM 5 Base current IB 200 Peak base current, tp 10 ms IBM 500 Total power dissipation- Ptot 5 W 150 C A mA TS 100 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 2 Value Unit 10 K/W 2011-10-05 BDP947_BDP949_BDP953 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BDP947 45 - - IC = 10 mA, IB = 0 , BDP949 60 - - IC = 10 mA, IB = 0 , BDP953 100 - - IC = 100 A, IE = 0 , BDP947 45 - - IC = 100 A, IE = 0 , BDP949 60 - - IC = 0 , IE = 100 A, BDP953 120 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 45 V, IE = 0 - - 0.1 VCB = 45 V, IE = 0 , TA = 150 C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain2) - hFE IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 100 - 475 IC = 2 A, VCE = 2 V, BDP947, BDP949 50 - - IC = 2 A, VCE = 2 V, BDP953 15 - - VCEsat - - 0.5 VBEsat - - 1.3 fT - 100 - MHz Ccb - 25 - pF Collector-emitter saturation voltage2) V IC = 2 A, IB = 0.2 A Base emitter saturation voltage2) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300s; D < 2% 3 2011-10-05 BDP947_BDP949_BDP953 DC current gain hFE = (IC) VCE = 2 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 10 4 10 3 mA 100C - 25C 10 3 -55C IC hFE 10 2 100C 25C -50C 10 2 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA 10 10 0 0 4 0.1 0.2 0.3 V 0.4 IC Base-emitter saturation voltage Collector current IC = (VBE) IC = (VBEsat), hFE = 10 VCE = 2 V 10 4 10 4 mA mA 10 3 IC -50C 25C 100C -50C 25C 100C IC 10 3 10 2 10 2 10 1 10 1 10 0 0 0.6 VCEsat 0.2 0.4 0.6 0.8 1 V 10 0 0 1.3 VBEsat 0.2 0.4 0.6 0.8 1 V 1.3 VBE 4 2011-10-05 BDP947_BDP949_BDP953 Collector cutoff current ICBO = (TA) VCB = 45 V Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 10 5 nA 500 pF CCB(CEB ) ICB0 10 4 10 3 max 10 2 400 350 300 250 CEB 200 10 1 150 typ 100 10 0 50 10 -1 0 CCB 20 40 60 80 100 120 C 0 0 150 4 8 12 16 TA V 22 VCB(VEB Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 2 5.5 W 4.5 RthJS Ptot 4 3.5 10 1 3 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 2.5 2 10 0 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 C 10 -1 -6 10 150 ts 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 BDP947_BDP949_BDP953 Permissible Pulse Load Ptotmax/PtotDC = (tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-10-05 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BDP947_BDP949_BDP953 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2011-10-05 BDP947_BDP949_BDP953 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-10-05