UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 Features PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 12* A Power Dissipation PD 250 W Junction Temperature TJ 200 C Storage Temperature TSTG -55 to +150 C Thermal Resistance JC 0.7 C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN () ZLOAD () 100 4.5-j6.0 14.5+j0.5 300 2.25-j1.75 7.5j1.0 500 1.5+j5.5 3.5+j3.5 VDD=28V, IDQ=600 Ma, POUT =100.0 W ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain ELECTRICAL CHARACTERISTICS AT 25C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units Test Conditions BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 3.0 A VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA Forward Transconductance GM 1.5 - S VDS = 10.0 V , IDS 3000.0 mA , VGS = 1.0V, 80 s Pulse Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Drain Efficiency D 50 - % VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Return Loss RL 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Gate Threshold Voltage Power Gain Load Mismatch Tolerance *Per side 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 Typical Broadband Performance Curves EFFICIENCY VS FREQUENCY PIN=10W IDD =600 mA (Push pull device) 120 POPWER OUTPUT (W) EFFICIENCY (%) 80 70 60 50 40 100 100 80 60 40 20 0 200 300 POWER OUTPUT VS SUPPLY VOLTAGE PIN=10 W IDQ=600 mA F=500 MHz 400 500 14 16 20 24 28 SUPPLY VOLTAGE (V) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA (Push pull device) POWER OUTPUT (W) 120 200MHz 100 400MHz 500MHz 80 300MHz 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT (W) 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 32 UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. 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