RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Rev. V1
UF28100H
1
1
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1
Features
ï‚· N-channel enhancement mode device
ï‚· DMOS structure
ï‚· Lower capacitances for broadband operation
ï‚· High saturated output power
ï‚· Lower noise figure than competitive devices
ï‚· RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter Rating Symbol Units
Drain-Source Voltage 65 VDS V
Gate-Source Voltage 20 VGS V
Drain-Source Current 12* IDS A
Power Dissipation 250 PD W
Junction Temperature 200 TJ °C
Storage Temperature -55 to +150 TSTG °C
Thermal Resistance 0.7 θJC °C/W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter Symbol Min Max Units Test Conditions
Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA
Drain-Source Leakage Current IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA
Forward Transconductance GM 1.5 - S VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz
Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz
Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Drain Efficiency Å‹D 50 - % VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Return Loss RL 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Load Mismatch Tolerance VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
F (MHz) ZIN (Ω) ZLOAD (Ω)
100 4.5-j6.0 14.5+j0.5
300 2.25-j1.75 7.5j1.0
500 1.5+j5.5 3.5+j3.5
VDD=28V, IDQ=600 Ma, POUT =100.0 W
TYPICAL DEVICE IMPEDANCES
ZIN is the series equivalent input impedance of the device from gate to gate.
ZLOAD is the optimum series equivalent load impedance as measured from drain
*Per side
PACKAGE OUTLINE
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Rev. V1
UF28100H
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Typical Broadband Performance Curves
SUPPLY VOLTAGE (V)
POWER OUTPUT VS SUPPLY VOLTAGE
PIN=10 W IDQ=600 mA F=500 MHz
POPWER OUTPUT (W)
120
100
80
60
40
20
0
20 16 28 14 24 32
POWER OUTPUT VS POWER INPUT
VDD =28 V IDQ =600 mA (Push pull device)
POWER OUTPUT (W)
2
POWER INPUT (W)
300MHz
200MHz
120
100
80
60
40
20
0
1 10 8 4 0 12
500MHz
6
EFFICIENCY VS FREQUENCY
PIN=10W IDD =600 mA (Push pull device)
EFFICIENCY (%)
200 400
FREQUENCY (MHz)
80
70
60
50
40
300 100 500
400MHz
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Rev. V1
UF28100H
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
TEST FIXTURE ASSEMBLY
TEST FIXTURE SCHEMATIC
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Rev. V1
UF28100H
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
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