2N3700CSM HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES * SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 3 * CECC SCREENING OPTIONS 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) * SPACE QUALITY LEVELS OPTIONS 0.76 0.15 (0.03 0.006) 2.54 0.13 (0.10 0.005) 0.51 0.10 (0.02 0.004) * HIGH VOLTAGE 0.31 rad. (0.012) A = 1.02 0.10 (0.04 0.004) A 1.40 (0.055) max. APPLICATIONS: Hermetically sealed surface mount version of the popular 2N3700 for high reliability / space applications requiring small size and low weight devices. LCC1 CERAMIC PACKAGE Underside View PAD 1 - Emitter PAD 2 - Base PAD 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD RJA Tstg Collector - Base Voltage (IE = 0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Collector Current Total Power Dissipation (Tamb 25C) Thermal Resistance Junction to Ambient Storage Temperature 140V 80V 7V 1A 0.5W 350C/W -65 to 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5594 Issue 1 2N3700CSM ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ICBO Test Conditions Collector - Base Cut-off Current VCB = 90V (IE = 0) VCB = 90V IEBO Emitter Cut-off Current (IC = 0) VEB = 5V VCE(sat)* Collector - Emitter Saturation Voltage IC = 150mA Min. Typ. Max. Unit 10 nA 10 A 10 nA IB = 15mA 0.2 V IC = 500mA IB = 50mA 0.5 V IB = 15mA 1.1 V Tamb = 150C VBE(sat)* Base - Emitter Saturation Voltage IC = 150mA hFE* DC Current Gain (VCE = 10V) IC = 0.1mA 50 - IC = 10mA 90 - IC = 150mA 100 IC = 500mA 50 - IC = 1A 15 - 40 - IC = 100A 140 V IE = 100A 7 V IC = 150mA V(BR)CBO Collector-base Breakdown Voltage Tamb = -55C 300 - (IE = 0) V(BR)EBO Emitter-base BreakdownVoltage (IC = 0) * Pulse test tp = 300s , 1% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit 100 MHz fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz hfe CEBO Small Signal Current Gain IC = 1mA VCE = 5V f = 1kHz Emitter-base Capacitance IC = 0 VEB = 0.5V f = 1MHz 60 pF CCBO Collector-base Capacitance IC = 0 VCB = 10V f = 1MHz 12 pF rbb'Cb'c Feedback time constant IC = 10mA VCB = 10V f = 4MHz 80 25 400 400 - ps Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5594 Issue 1