SILICON S CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE WITCHING DIODE SOT-23 CASE The following configurations are available: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (T,=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 psec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode. MARKING CODE: MARKING CODE: MARKING CODE: MARKING CODE: SYMBOL VR 75 VRARM 100 IF 250 lFRM 250 lFSsM 4000 lFsmM 1000 Pp 350 Ty Tstg -65 to +150 OA 357 ELECTRICAL CHARACTERISTICS PER DIODE: (T,a=25C unless otherwise noted) SYMBOL TEST CONDITIONS VR=75V IR=100pA Ip=1.0mA Ip=10mA Ip=100mA VpR=0, f=1.0 MHz IR=lp=10mA, Ri, =1002, Rec. to 1.0mA For Typical Electrical Characteristic Data for this device, (Process CPD91), Please Consult Factory. 340 MIN MAX 500 100 0.85 0.95 al 2.0 3.0 ULO ULA ULC ULS UNITS mA mA mA mA mw C C/W UNITS R3 (6-August 2003)T CMPD6001 ntrail CMPD6001A CMPD6001C Semiconductor Corp. CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE SOT-23 (REV: R3) | [oe a ale LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: CMPD6001 CMPD6001A CMPD6001C CMPD6001S 1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2 2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2 MARKING MARKING MARKING MARKING CODE: ULO CODE: ULA CODE: ULC CODE: ULS R3 (6-August 2003) 341