2SC1060, 2SC1061 YYUA>Y NPN = She SILICON NPN TRIPLE DIFFUSED SARE AR LOW FREQUENCY POWER AMPLIFIER 2SA670, 2SA671 29 VIYALVAUAP Complementary pair with 2SA670 and 2SA671 25C1060 2$C1061 z 2 gS oS 0.5max.>} $3.6 0.2 4.8max. oy 9.0min. 14,7 15.3max. 6.3min. 1. A+ Base 2. 279 Collector (77> ) (Flange) | t 1.27 3. Livy + Emitter 3.0max. (Dimensions in mm) (JEDEC TO-220AA) (JEDEC TQ-220AB) BURA ABSOLUTE MAXIMUM RATINGS (Ta=25C ) RMBEILD SMEDS -ABB SRL 5 "T 98c1060 0 MAXIMUM COLLECTOR DISSIPATION A 8 ymbol 1060, 2S5C1061 | Unit CURVE 2VeeeR- REE Veso 50 30 2U7 e+ Div TBE Vezo 50 Vv | | niye +: 8-AREE Veno 4 Vv = | a2 vo oy FY) BOR Ic 3 A a 20 w#A DY 7 Fe BR Pc* 25 w x | 2 & 8 BY TF 150 c < | a e t @ Bl Tee 55~ +150 c e 1 | | # T= DSC BUT SAME , % * Value at Tcom25T | | 0 50 T00 150 4 ARIE Te (0) Baht ELECTRICAL CHARACTERISTICS (Ta=25C ) A 8 Symbol , Test Condition min typ max Unit SUI N-RBM EE | Viemcso | IcmSmA, le-0 50 - - Vv 2V77 2S vy PRR Vipriceo Ic=50mA, Rae= 50 _ - Vv niyo *S-ARBBRE Viarieso le=5mA, Ic=0 4 _ Vv a+ 7 9 i BH BH | Icso Vea20V, Ie~0 - 100 BA ak eM hre Veem4V, Icom 1A * 35 - 320 zk eR Zh M TH | are Vee=4V, Icm0.1A 35 = _ X-R+ ER 4 F BE | Vee Veem4V, Icm1A 0.85 1.5 Vv Supe xy PMR | Vou | to2A, lo 0.2A = 0.5 1.0 \ 2 kK k @ & hh | Ie Ver40V, f50Hz (Half Wave ) | 2.0 - A A 8 RR B MRM) fr Veem4V, Ic0.5A ~ 8 - MHz # 2SC1060, 2SC1061 Is Are OAMIE EO FROLIC ARPL, Bac RRLTHI ET. = | # The 2SC1060 and 2SC1061 are grouped by Are as follows. 3570 | 60~120 | 100~200 | 160~320 413