5SNS0150V172100 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE = 1700

V

IC = 150

A

Doc. No. 5SYA1536

-

02 June 04

• Low-loss, rugged IGBT SPT chip-set

• EMC friendly switching

characteristics

• Low profile compact baseless

package for good power cycling

• Suitable for snap-on gate-driver

connection

• Integrated PTC substrate

temperature sensor

• Aluminium nitride substrate for low

thermal resistance

Maximum rated values 1)

Parameter Symbol Conditions min max

Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700

V

DC collector current IC Th = 80 °C 150 A

Peak collector current ICM tp = 1 ms, Th = 80 °C 300 A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot Th = 25 °C, per switch (IGBT) 680 W

DC forward current IF 150 A

Peak forward current IFM 300 A

Surge current IFSM VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave 1100

A

IGBT short circuit SOA tpsc VCC = 1300 V, VCEM CHIP ≤ 1700 V

VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs

Isolation voltage Visol 1 min, f = 50 Hz 4000

V

Junction temperature Tvj 150 °C

Case operating temperature Tc(op) -40 125 °C

Storage temperature Tstg -40 125 °C

M1 Base-heatsink, M5 screws 2 3

Mounting torques 2) M2 Main terminals, M6 screws 4 6 Nm

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

2) For detailed mounting instructions refer to ABB Document No. 5SYA2017

IGBT Module LoPak4 SPT

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 2 of 9

IGBT characteristic values 3)

Parameter Symbol Conditions min typ max

Unit

Collector (-emitter)

breakdown voltage V(BR)CES V

GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700

V

Tvj = 25 °C 2.3 2.7 V

Collector-emitter 4)

saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 125 °C 2.6 V

Tvj = 25 °C 1 mA

Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 1.5 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500

500 nA

Gate-emitter threshold voltage VGE(TO) IC = 6 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V

Gate charge Qge IC = 150 A, VCE = 900 V,

VGE = -15 V .. 15 V 1260

nC

Input capacitance Cies 13.8

Output capacitance Coes 0.96

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C 0.58 nF

Tvj = 25 °C 130

Turn-on delay time td(on) Tvj = 125 °C 140 ns

Tvj = 25 °C 100

Rise time tr

VCC = 900 V,

IC = 150 A,

RG = 8.2 Ω,

VGE = ±15 V,

Lσ = 55 nH, inductive load

Tvj = 125 °C 110 ns

Tvj = 25 °C 515

Turn-off delay time td(off) Tvj = 125 °C 600 ns

Tvj = 25 °C 90

Fall time tf

VCC = 900 V,

IC = 150 A,

RG = 8.2 Ω,

VGE = ±15 V,

Lσ = 55 nH, inductive load

Tvj = 125 °C 110 ns

Tvj = 25 °C 36

Turn-on switching energy Eon VCC = 900 V, IC = 150 A,

VGE = ±15 V, RG = 8.2 Ω,

Lσ = 55 nH, inductive load

Tvj = 125 °C 49 mJ

Tvj = 25 °C 24

Turn-off switching energy Eoff VCC = 900 V, IC = 150 A,

VGE = ±15 V, RG = 8.2 Ω,

Lσ = 55 nH, inductive load

Tvj = 125 °C 38 mJ

Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,

VCC = 1300 V, VCEM CHIP ≤ 1700 V 700 A

Module stray inductance

plus to minus Lσ DC 20 nH

Th = 25 °C 1.3

Resistance, terminal-chip RCC’+EE’ T

h

= 125 °C 1.8 mΩ

3) Characteristic values according to IEC 60747 - 9

4) Collector-emitter saturation voltage is given at chip level

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 3 of 9

Diode characteristic values 5)

Parameter Symbol Conditions min typ max

Unit

Tvj = 25 °C 2.0 2.3

Forward voltage 6) VF IF = 150 A Tvj = 125 °C 2.05 V

Tvj = 25 °C 125

Reverse recovery current Irr Tvj = 125 °C 141 A

Tvj = 25 °C 20

Recovered charge Qrr Tvj = 125 °C 41 µC

Tvj = 25 °C 350

Reverse recovery time trr Tvj = 125 °C 600 ns

Tvj = 25 °C 10

Reverse recovery energy Erec

VCC = 900 V,

IF = 150 A,

VGE = ±15 V,

RG = 8.2 Ω

Lσ = 55 nH

inductive load

Tvj = 125 °C 22 mJ

5) Characteristic values according to IEC 60747 - 2

6) Forward voltage is given at chip level

Thermal properties

Parameter Symbol Conditions min typ max

Unit

IGBT thermal resistance 2)

junction to heatsink Rth(j-h)IGBT 0.185

K/W

Diode thermal resistance 2)

junction to heatsink Rth(j-h)DIODE

Heatsink: flatness < ±50 µm,

roughness < 6 µm without ridge

Thermal grease: conductivity ≥ 0.8 W/mK,

thickness 30 µm < t < 50 µm 0.355

K/W

Temperature sensor PTC RT = RT0 exp [B (1/T - 1/T0)]

RT0 = 1kΩ (±3%), B = -760 K (±2%), T0 = 298 K

Mechanical properties

Parameter Symbol Conditions min typ max

Unit

Dimensions L x W x H

Typical , see outline drawing 123 x 106.5 x 34.5 mm

Term. to base:

13.5

Clearance distance DC according to IEC 60664-1

and EN 50124-1 Term. to term:

11 mm

Term. to base:

14

Surface creepage distance DSC according to IEC 60664-1

and EN 50124-1 Term. to term:

11.5 mm

Weight 310 gr

PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep

Mounting 2) Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm

2) For detailed mounting instructions refer to ABB Document No. 5SYA2017

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 4 of 9

Electrical configuration

Outline drawing 2)

Note: all dimensions are shown in mm

2) For detailed mounting instructions refer to ABB Document No. 5SYA2017

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 5 of 9

0

50

100

150

200

250

300

0 1 2 3 4 5 6

VCE [V]

IC [A]

Tvj = 25 °C

9V

11V

13V

15V

17V

0

50

100

150

200

250

300

0 1 2 3 4 5 6

VCE [V]

IC [A]

Tvj = 125 °C

9V

11V

13V

15V

17V

Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level

0

50

100

150

200

250

300

0 1 2 3 4 5 6 7 8 9 1011 12

VGE [V]

IC [A]

125 °C

25 °C

V

CE = 20 V

0

0.5

1

1.5

2

2.5

0500 1000 1500 2000

VCE [V]

IC pulse / IC

Chip

Power terminals

V

CC ≤ 1300 V, Tvj = 125 °C

V

GE = ±15 V, RG = 8.2 ohm

Fig. 3 Typical transfer characteristics, chip level Fig. 4 Turn-off safe operating area (RBSOA)

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 6 of 9

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0 50 100 150 200 250 300 350

IC [A]

Eon, Eoff [J]

V

CC = 900 V

RG = 8.2 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 55 nH

Eon

Eoff

Esw[mJ] = 7.03 x 10-4 x IC2 + 0.401 x IC + 12.1

0

0.02

0.04

0.06

0.08

0.1

0.12

0 5 10 15 20 25 30 35

RG [ohm]

Eon, Eoff [J]

V

CC = 900 V

IC = 150 A

V

GE = ±15 V

Tvj = 125 °C

Lσ = 55 nH

Eon

Eoff

Fig. 5 Typical switching energies per pulse

vs collector current Fig. 6 Typical switching energies per pulse

vs gate resistor

0.01

0.10

1.00

0 50 100 150 200 250 300 350

IC [A]

td(on), tr, td(off), tf [µs]

td(off)

td(on)

tr

tf

V

CC = 900 V

RG = 8.2 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 55 nH

0.01

0.10

1.00

10.00

010 20 30 40

RG [ohm]

td(on), tr, td(off), tf [µs]

td(on)

td(off)

tr

tf

V

CC = 900 V

IC = 150 A

V

GE = ±15 V

Tvj = 125 °C

Lσ = 55 nH

Fig. 7 Typical switching times

vs collector current Fig. 8 Typical switching times

vs gate resistor

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 7 of 9

0.1

1

10

100

0 5 10 15 20 25 30 35

VCE [V]

C [nF]

VGE = 0 V

fOSC = 1 MHz

VOSC = 50 mV

Cies

Coes

Cres

0

5

10

15

20

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Qg [µC]

VGE [V]

V

CC

= 900 V

IC = 150 A

Tvj = 25 °C

V

CC

= 1300 V

Fig. 9 Typical capacitances

vs collector-emitter voltage Fig. 10 Typical gate charge characteristics

0

50

100

150

200

250

0 20 40 60 80 100 120 140 160

Th [°C]

IC, IF [A]

IGBT

Diode

V

GE ≥ 15 V

Tvj = 150 °C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 20 40 60 80 100 120 140

T [°C]

RT [ohm]

)11(

00

TTB

TT eRR −

=

298%),2(760%),3(1 00

K

T

K

B

k

R

T=±−=±Ω=

Fig. 11 Rated current vs temperature Fig. 12 PTC temperature sensor

5SNS 0150V172100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1536-02 June 04 page 8 of 9

0

5

10

15

20

25

30

35

40

0 50 100 150 200 250 300 350

IF [A]

Erec [mJ]

0

20

40

60

80

100

120

140

160

Irr [A], Qrr [µC]

V

CC = 900 V

RG = 8.2 ohm

Tvj = 125 °C

Lσ = 55 nH

Qrr

Irr

Erec

Erec [mJ] = -1.38 x 10-4 x IF2 + 0.134 x IF + 4.19

0

50

100

150

200

250

300

0.0 1.0 2.0 3.0

VF [V]

IF [A]

25°C

125°C

Fig. 13 Typical reverse recovery characteristics

vs forward current Fig. 14 Typical diode forward characteristics,

chip level

0

5

10

15

20

25

30

0 10 20 30 40

RG [ohm]

Erec [mJ]

0

50

100

150

200

250

300

Irr [ A], Qrr [µC]

V

CC = 900 V

IF = 150 A

Tvj = 125 °C

Lσ = 55 nH

Irr

E

rec

Qrr

Fig. 15 Typical reverse recovery characteristics

vs gate resistor

5SNS 0150V172100

This technical information specifies semiconductor devices but promises no characteristics. No warranty or

guarantee expressed or implied is made regarding delivery, performance or suitability.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1536-02 June 04

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

ih)-(jth ∑

=

i

τ

i 1 2 3 4 5

Ri(K/kW)

155 18.6 5.56 4.59

IGBT

τi(ms) 198 142 2.96 0.50

Ri(K/kW)

90.0 240 8.58 14.7

DIODE

τi(ms) 195 190 5.67 1.38

0.0001

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10

t [s]

Zth(j-h)

[K/W] IGBT, DIODE

Zth(j-h) IGBT

Zth(j-h) Diode

Fig. 16 Typical thermal impedance vs time