EP7311-IB-C - Cirrus Logic, Inc.



DS506PP1

http://www.cirrus.com

High-Performance,

Low-Power System on Chip with

SDRAM and Enhanced Digital

Audio Interface

EP7311 Data Sheet

OVERVIEW

BLOCK DIAGRAM

FEATURES

(cont.) (cont.)

■ARM720T Processor

—ARM7TDMICPU

— 8 KB of four-way set-associative cache

— MMU with 64-entry TLB

— Thumb code support enabled

■Ultra low power

—90mWat74MHztypical

—30mWat18MHztypical

—10mWintheIdleState

—<1mWintheStandbyState

■48 KB of on-chip SRAM

■MaverickKey™IDs

— 32-bit unique ID can be used for SDMI compliance

—128-bitrandomID

■Dynamically programmable clock speeds of

18, 36, 49, and 74 MHz

LCD

Controller

Boot

ROM

MaverickKey

ARM7TDMI CPU Core

MMU

8 KB

Cache

Write

Buffer

Internal Data Bus

EPB Bus

Memory Controller

SDRAM I/FSRAM I/F

On-chip SRAM

48 KB

ICE-JTAG

Clocks &

Timers

Keypad&

Touch

Screen I/F

Interrupts,

PWM & GPIO

Bus

Bridge

(2) UARTs

w/ IrDA

Power

Management

Serial

Interface

Multimedia

Codec Port

ARM720T

MEMORY AND STORAGE

USER INTERFACE

SERIAL PORTS

The Maverick™ EP7311 is designed for ultra-low-power

applications such as PDAs, smart cellular phones, and

industrial hand held information appliances. The core-

logic functionality of the device is built around an

ARM720T processor with 8 KB of four-way set-

associative unified cache and a write buffer. Incorporated

into the ARM720T is an enhanced memory management

unit (MMU) which allows for support of sophisticated

operating systems like Linux®.



EP7311

High-Performance, Low-Power System on Chip

FEATURES (cont)

■LCD controller

— Interfaces directly to a single-scan panel

monochrome STN LCD

— Interfacestoasingle-scanpanelcolorSTNLCD

with minimal external glue logic

■Full JTAG boundary scan and Embedded ICE



support

■Integrated Peripheral Interfaces

— 32-bit SDRAM Interface up to 2 external banks

— 8/32/16-bit SRAM/FLASH/ROM Interface

—MultimediaCodecPort

— Two Synchronous Serial Interfaces (SSI1, SSI2)

—CODECSoundInterface

—8×8 Keypad Scanner

— 27 General Purpose Input/Output pins

— Dedicated LED flasher pin from the RTC

■Internal Peripherals

— Two 16550 compatible UARTs

—IrDAInterface

—TwoPWMInterfaces

—Real-timeClock

— Two general purpose 16-bit timers

— Interrupt Controller

— Boot ROM

■Package

—208-PinLQFP

— 256-Ball PBGA

— 204-Ball TFBGA

■The fully static EP7311 is optimized for low power

dissipation and is fabricated on a 0.25 micron CMOS

process

■Development Kits

— EDB7312: Development Kit with color STN LCD

on board.

— EDB7312-LW: EDB7312 with Lynuxworks’

BlueCat Linux Tools and software for Windows

host (free 30 day BlueCat support from

Lynuxworks).

— EDB7312-LL: EDB7312 with Lynuxworks’ BlueCat

Linux Tools and software for Linux host (free 30

day BlueCat support from Lynuxworks).

Note: * BlueCat available separately through Lynuxworks

only.

* Use the EDB7312 Development Kit for all the EP73xx

devices.

OVERVIEW (cont.)

The EP7311 is designed for low-power operation. Its core

operates at only 2.5 V, while its I/O has an operation

range of 2.5 V–3.3 V. The device has three basic power

states: operating, idle and standby.

One of its notable features is MaverickKey unique IDs.

These are factory programmed IDs in response to the

growing concern over secure web content and commerce.

With Internet security playing an important role in the

delivery of digital media such as books or music,

traditional software methods are quickly becoming

unreliable. The MaverickKey unique IDs consist of two

registers, one 32-bit series register and one random 128-

bit register that may be used by an OEM for an

authentication mechanism.

Simply by adding desired memory and peripherals to the

highly integrated EP7311 completes a low-power system

solution. All necessary interface logic is integrated on-

chip.

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

Processor Core - ARM720T

The EP7311 incorporates an ARM 32-bit RISC

microcontroller that controls a wide range of on-chip

peripherals. The processor utilizes a three-stage pipeline

consisting of fetch, decode and execute stages. Key

features include:

• ARM (32-bit) and Thumb (16-bit compressed)

instruction sets

• Enhanced MMU for Microsoft Windows CE and other

operating systems

• 8 KB of 4-way set-associative cache.

• Translation Look Aside Buffers with 64 Translated

Entries

Power Management

The EP7311 is designed for ultra-low-power operation.

Its core operates at only 2.5 V, while its I/O has an

operation range of 2.5 V–3.3 V allowing the device to

achieve a performance level equivalent to 60 MIPS. The

device has three basic power states:

• Operating — This state is the full performance

state. All the clocks and peripheral logic are

enabled.

• Idle — This state is the same as the Operating

State, except the CPU clock is halted while

waiting for an event such as a key press.

• Standby — This state is equivalent to the

computer being switched off (no display), and

the main oscillator shut down. An event such as

a key press can wake-up the processor.

MaverickKey™ Unique ID

MaverickKey unique hardware programmed IDs are a

solution to the growing concern over secure web content

and commerce. With Internet security playing an

important role in the delivery of digital media such as

books or music, traditional software methods are quickly

becoming unreliable. The MaverickKey unique IDs

provide OEMs with a method of utilizing specific

hardwareIDssuchasthoseassignedforSDMI(Secure

Digital Music Initiative) or any other authentication

mechanism.

Both a specific 32-bit ID as well as a 128-bit random ID is

programmed into the EP7311 through the use of laser

probing technology. These IDs can then be used to match

secure copyrighted content with the ID of the target

device the EP7311 is powering, and then deliver the

copyrighted information over a secure connection. In

addition, secure transactions can benefit by also

matchingdeviceIDstoserverIDs.MaverickKeyIDs

provide a level of hardware security required for today’s

Internet appliances.

Memory Interfaces

There are two main external memory interfaces. The first

one is the ROM/SRAM/FLASH-style interface that has

programmable wait-state timings and includes burst-

mode capability, with six chip selects decoding six

256 MB sections of addressable space. For maximum

flexibility, each bank can be specified to be 8-, 16-, or 32-

bits wide. This allows the use of 8-bit-wide boot ROM

options to minimize overall system cost. The on-chip

boot ROM can be used in product manufacturing to

serially download system code into system FLASH

memory. To further minimize system memory

requirements and cost, the ARM Thumb instruction set is

supported, providing for the use of high-speed 32-bit

operations in 16-bit op-codes and yielding industry-

leading code density.

Note: Pins are multiplexed. See Table S on page 8 for more

information.

Pin Mnemonic I/O Pin Description

BATOK I Battery ok input

nEXTPWR I External power supply sense

input

nPWRFL I Power fail sense input

nBATCHG I Battery changed sense input

Table A. Power Management Pin Assignments

Pin Mnemonic I/O Pin Description

nCS[5:0] O Chip select out

A[27:0] O Address output

D[31:0] I/O Data I/O

nMOE/nSDCAS (Note) O ROM expansion OP enable

nMWE/nSDWE (Note) O ROM expansion write enable

HALFWORD O Halfword access select

output

WORD O Word access select output

WRITE/nSDRAS (Note) O Transfer direction

Table B. Static Memory Interface Pin Assignments



EP7311

High-Performance, Low-Power System on Chip

The second is the programmable 16- or 32-bit-wide

SDRAM interface that allows direct connection of up to

two banks of SDRAM, totaling 512 Mb. To assure the

lowest possible power consumption, the EP7311

supports self-refresh SDRAMs, which are placed in a

low-power state by the device when it enters the low-

power Standby State.

Note: 1. Pins A[27:13] map to DRA[0:14] respectively.

(i.e. A[27}/DRA[0}, A[26}/DRA[1], etc.) This is to

balance the load for large memory systems.

2. Pins are multiplexed. See Table S on page 8 for

more information.

Digital Audio Capability

The EP7311 uses its powerful 32-bit RISC processing

engine to implement audio decompression algorithms in

software. The nature of the on-board RISC processor, and

the availability of efficient C-compilers and other

software development tools, ensures that a wide range of

audio decompression algorithms can easily be ported to

and run on the EP7311

Universal Asynchronous

Receiver/Transmitters (UARTs)

The EP7311 includes two 16550-type UARTs for RS-232

serial communications, both of which have two 16-byte

FIFOs for receiving and transmitting data. The UARTs

support bit rates up to 115.2 kbps. An IrDA SIR protocol

encoder/decoder can be optionally switched into the

RX/TX signals to/from UART 1 to enable these signals

to drive an infrared communication interface directly.

Multimedia Codec Port (MCP)

The Multimedia Codec Port provides access to an audio

codec, a telecom codec, a touchscreen interface, four

general purpose analog-to-digital converter inputs, and

ten programmable digital I/O lines.

Note: See Table R on page 8 for information on pin

multiplexes.

Pin Mnemonic I/O Pin Description

SDCLK O SDRAM clock output

SDCKE O SDRAM clock enable output

nSDCS[1:0] O SDRAM chip select out

WRITE/nSDRAS (Note 2) O SDRAM RAS signal output

nMOE/nSDCAS (Note 2) O SDRAM CAS control signal

nMWE/nSDWE (Note 2) O SDRAM write enable control

signal

A[27:15]/DRA[0:12] (Note 1) O SDRAM address

A[14:13]/DRA[12:14] O SDRAM internal bank select

PD[7:6]/SDQM[1:0] (Note 2) I/O SDRAM byte lane mask

SDQM[3:2] O SDRAM byte lane mask

D[31:0] I/O Data I/O

Table C. SDRAM Interface Pin Assignments

Pin Mnemonic I/O Pin Description

TXD[1] O UART 1 transmit

RXD[1] I UART 1 receive

CTS I UART 1 clear to send

DCD I UART 1 data carrier detect

DSR I UART 1 data set ready

TXD[2] O UART 2 transmit

RXD[2] I UART 2 receive

LEDDRV O Infrared LED drive output

PHDIN I Photo diode input

Table D. Universal Asynchronous Receiver/Transmitters Pin

Assignments

Pin Mnemonic I/O Pin Description

SIBCLK O Serial bit clock

SIBDOUT O Serial data out

SIBDIN I Serial data in

SIBSYNC O Sample clock

Table E. MCP Interface Pin Assignments

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

CODEC Interface

The EP7311 includes an interface to telephony-type

CODECs for easy integration into voice-over-IP and

other voice communications systems. The CODEC

interface is multiplexed to the same pins as the MCP and

SSI2.

Note: See Table R on page 8 for information on pin

multiplexes.

SSI2 Interface

An additional SPI/Microwire1-compatible interface is

available for both master and slave mode

communications. The SSI2 unit shares the same pins as

the MCP and CODEC interfaces through a multiplexer.

• Synchronous clock speeds of up to 512 kHz

• Separate 16 entry TX and RX half-word wide FIFOs

• Half empty/full interrupts for FIFOs

• Separate RX and TX frame sync signals for

asymmetric traffic

Note: See Table R on page 8 for information on pin

multiplexes.

Synchronous Serial Interface

• ADC (SSI) Interface: Master mode only; SPI and

Microwire1-compatible (128 kbps operation)

• Selectable serial clock polarity

LCD Controller

A DMA address generator is provided that fetches video

display data for the LCD controller from memory. The

display frame buffer start address is programmable,

allowingtheLCDframebuffertobeinSDRAM,internal

SRAM or external SRAM.

• Interfaces directly to a single-scan panel monochrome

STN LCD

• Interfaces to a single-scan panel color STN LCD with

minimal external glue logic

• Panel width size is programmable from 32 to 1024

pixels in 16-pixel increments

• Video frame buffer size programmable up to

128 KB

• Bits per pixel of 1, 2, or 4 bits

Pin Mnemonic I/O Pin Description

PCMCLK O Serial bit clock

PCMOUT O Serial data out

PCMIN I Serial data in

PCMSYNC O Frame sync

Table F. CODEC Interface Pin Assignments

Pin Mnemonic I/O Pin Description

SSICLK I/O Serial bit clock

SSITXDA O Serial data out

SSIRXDA I Serial data in

SSITXFR I/O Transmit frame sync

SSIRXFR I/O Receive frame sync

Table G. SSI2 Interface Pin Assignments

Pin Mnemonic I/O Pin Description

ADCLK O SSI1 ADC serial clock

ADCIN I SSI1 ADC serial input

ADCOUT O SSI1 ADC serial output

nADCCS O SSI1 ADC chip select

SMPCLK O SSI1 ADC sample clock

Table H. Serial Interface Pin Assignments

Pin Mnemonic I/O Pin Description

CL1 O LCD line clock

CL2 O LCD pixel clock out

DD[3:0] O LCD serial display data bus

FRM O LCD frame synchronization pulse

M O LCD AC bias drive

Table I. LCD Interface Pin Assignments



EP7311

High-Performance, Low-Power System on Chip

64-Keypad Interface

Matrix keyboards and keypads can be easily read by the

EP7311. A dedicated 8-bit column driver output

generates strobes for each keyboard column signal. The

pins of Port A, when configured as inputs, can be

selectively OR'ed together to provide a keyboard

interrupt that is capable of waking the system from a

STANDBY or IDLE state.

• Column outputs can be individually set high with the

remaining bits left at high-impedance

• Column outputs can be driven all-low, all-high, or all-

high-impedance

• Keyboard interrupt driven by OR'ing together all Port

Abits

• Keyboard interrupt can be used to wake up the

system

•8×8 keyboard matrix usable with no external logic,

extra keys can be added with minimal glue logic

Interrupt Controller

When unexpected events arise during the execution of a

program (i.e., interrupt or memory fault) an exception is

usually generated. When these exceptions occur at the

same time, a fixed priority system determines the order

in which they are handled. The EP7311 interrupt

controller has two interrupt types: interrupt request

(IRQ) and fast interrupt request (FIQ). The interrupt

controller has the ability to control interrupts from 22

different FIQ and IRQ sources.

• Supports 22 interrupts from a variety of sources (such

as UARTs, SSI1, and key matrix.)

• RoutesinterruptsourcestotheARM720T’sIRQor

FIQ (Fast IRQ) inputs

• Five dedicated off-chip interrupt lines operate as level

sensitive interrupts

Note: Pins are multiplexed. See Table S on page 8 for more

information.

Real-Time Clock

The EP7311 contains a 32-bit Real Time Clock (RTC) that

can be written to and read from in the same manner as

the timer counters. It also contains a 32-bit output match

interrupt.

• Driven by an external 32.768 kHz crystal oscillator

PLL and Clocking

• Processor and Peripheral Clocks operate from a single

3.6864 MHz crystal or external 13 MHz clock

• Programmable clock speeds allow the peripheral bus

to run at 18 MHz when the processor is set to 18 MHz

and at 36 MHz when the processor is set to 36, 49 or

74 MHz

Pin Mnemonic I/O Pin Description

COL[7:0] O Keyboard scanner column drive

Table J. Keypad Interface Pin Assignments

Pin Mnemonic I/O Pin Description

nEINT[2:1] I External interrupt

EINT[3] I External interrupt

nEXTFIQ I External Fast Interrupt input

nMEDCHG/nBROM (Note) I Media change interrupt input

Table K. Interrupt Controller Pin Assignments

Pin Mnemonic Pin Description

RTCIN Real-Time Clock Oscillator Input

RTCOUT Real-Time Clock Oscillator Output

VDDRTC Real-Time Clock Oscillator Power

VSSRTC Real-Time Clock Oscillator Ground

Table L. Real-Time Clock Pin Assignments

Pin Mnemonic Pin Description

MOSCIN Main Oscillator Input

MOSCOUT Main Oscillator Output

VDDOSC Main Oscillator Power

VSSOSC Main Oscillator Ground

Table M. PLL and Clocking Pin Assignments

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

DC-to-DC converter interface (PWM)

• Providestwo96kHzclockoutputswith

programmable duty ratio (from 1-in-16 to 15-in-16)

that can be used to drive a positive or negative DC to

DC converter

Timers

• Internal (RTC) timer

• Two internal 16-bit programmable hardware count-

down timers

General Purpose Input/Output (GPIO)

• Three 8-bit and one 3-bit GPIO ports

• Supports scanning keyboard matrix

Note: Pins are multiplexed. See Table S on page 8 for more

information.

Hardware debug Interface

• Full JTAG boundary scan and Embedded ICE



support

LED Flasher

A dedicated LED flasher module can be used to generate

a low frequency signal on Port D pin 0 for the purpose of

blinking an LED without CPU intervention. The LED

flasher feature is ideal as a visual annunciator in battery

powered applications, such as a voice mail indicator on a

portable phone or an appointment reminder on a PDA.

• Software adjustable flash period and duty cycle

• Operates from 32 kHz RTC clock

• Will continue to flash in IDLE and STANDBY states

•4mAdrivecurrent

Note: Pins are multiplexed. See Table S on page 8 for more

information.

Internal Boot ROM

The internal 128 byte Boot ROM facilitates download of

saved code to the on-board SRAM/FLASH.

Packaging

The EP7311 is available in a 208-pin LQFP package, 256-

ball PBGA package or a 204-ball TFBGA package.

Pin Mnemonic I/O Pin Description

DRIVE[1:0] I/O PWM drive output

FB[1:0] I PWM feedback input

Table N. DC-to-DC Converter Interface Pin Assignments

Pin Mnemonic I/O Pin Description

PA[7:0] I/O GPIO port A

PB[7:0] I/O GPIO port B

PD[0]/LEDFLSH (Note) I/O GPIO port D

PD[5:1] I/O GPIO port D

PD[7:6]/SDQM[1:0] (Note) I/O GPIO port D

PE[1:0]/BOOTSEL[1:0] (Note) I/O GPIO port E

PE[2]/CLKSEL (Note) I/O GPIO port E

Table O. General Purpose Input/Output Pin Assignments

Pin Mnemonic I/O Pin Description

TCLK I JTAG clock

TDI I JTAG data input

TDO O JTAG data output

nTRST I JTAG async reset input

TMS I JTAG mode select

Table P. Hardware Debug Interface Pin Assignments

Pin Mnemonic I/O Pin Description

PD[0]/LEDFLSH (Note) O LED flasher driver

Table Q. LED Flasher Pin Assignments



EP7311

High-Performance, Low-Power System on Chip

Pin Multiplexing

The following table shows the pin multiplexing of the

MCP, SSI2 and the CODEC. The selection between SSI2

and the CODEC is controlled by the state of the SERSEL

bit in SYSCON2. The choice between the SSI2, CODEC,

andtheMCPiscontrolledbytheMCPSELbitin

SYSCON3 (see the EP73xx User’s Manual for more

information).

The following table shows the pins that have been

multiplexed in the EP7311.

Mnemonic I/O MCP SSI2 CODEC

SSICLK I/O SIBCLK SSICLK PCMCLK

SSITXDA O SIBDOUT SSITXDA PCMOUT

SSIRXDA I SIBDIN SSIRXDA PCMIN

SSITXFR I/O SIBSYNC SSITXFR PCMSYNC

SSIRXFR I p/u SSIRXFR p/u

BUZ O

Table R. MCP/SSI2/CODEC Pin Multiplexing

Signal Block Signal Block

nMOE Static Memory nSDCAS SDRAM

nMWE Static Memory nSDWE SDRAM

WRITE Static Memory nSDRAS SDRAM

A[27:15] Static Memory DRA[0:12] SDRAM

A[14:13] Static Memory DRA[13:14] SDRAM

PD[7:6] GPIO SDQM[1:0] SDRAM

RUN System

Configuration CLKEN System

Configuration

nMEDCHG Interrupt

Controller nBROM Boot ROM

select

PD[0] GPIO LEDFLSH LED Flasher

PE[1:0] GPIO BOOTSEL[1:0] System

Configuration

PE[2] GPIO CLKSEL System

Configuration

Table S. Pin Multiplexing

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

System Design

As shown in system block diagram, simply adding

desired memory and peripherals to the highly integrated EP7311 completes a low-power system solution. All

necessary interface logic is integrated on-chip.

Figure 1. A Maximum EP7311 Based System

Note: A system can only use one of the following peripheral

interfaces at any given time: SSI2,CODEC or MCP.

LCD

KEYBOARD

BATTERY

DC-TO-DC

CONVERTERS

ADC DIGITIZER

IR LED AND

PHOTODIODE

2× RS-232

TRANSCEIVERS

ADDITIONAL I/O

PC CARD

CONTROLLER

PC CARD

SOCKET

nCS[4]

PB0

EXPCLK

DD[0-3]

CL1

CL2

FRM

D[0-31]

A[0-27]

COL[0-7]

PA[0-7]

INPUT

nMOE

WRITE

PB[0-7]

PD[0-7]

PE[0-2]

nPOR

nPWRFL

BATOK

nEXTPWR

nBATCHG

RUN

WAKEUP

nCS[0]

nCS[1]

DRIVE[0-1]

FB[0-1]

EP7311

ADCCLK

nADCCS

ADCOUT

ADCIN

SMPCLK

LEDDRV

PHDIN

RXD1/2

TXD1/2

DSR

CTS

DCD

CS[n]

WORD

nCS[2]

nCS[3]

×16

FLASH

×16

FLASH

×16

FLASH

EXTERNAL MEMORY-

MAPPED EXPANSION BUFFERS

BUFFERS

AND

LATCHES

×16

FLASH

POWER

SUPPLY UNIT

AND

COMPARATORS

CRYSTAL

CODEC/SSI2/

MCP

SSICLK

SSITXFR

SSITXDA

SSIRXDA

SSIRXFR

RTCIN

LEDFLSH

CRYSTAL MOSCIN

×16

SDRAM

×16

SDRAM

×16

SDRAM

×16

SDRAM

SDCS[1]

SDQM[0-3]

SDCS[0]

SDQM[0-3]

SDRAS/

SDCAS



EP7311

High-Performance, Low-Power System on Chip

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings

Recommended Operating Conditions

DC Characteristics

All characteristics are specified at VDDCORE =2.5V,V

DDIO =3.3VandV

SS = 0 V over an operating temperature of 0°C

to +70°C for all frequencies of operation. The current consumption figures have test conditions specified per

parameter.”

DC Core, PLL, and RTC Supply Voltage 2.9 V

DC I/O Supply Voltage (Pad Ring) 3.6 V

DC Pad Input Current ±10 mA/pin; ±100 mA cumulative

Storage Temperature, No Power –40°C to +125°C

DC core, PLL, and RTC Supply Voltage 2.5 V ± 0.2 V

DC I/O Supply Voltage (Pad Ring) 2.3 V - 3.5 V

DC Input / Output Voltage O–I/O supply voltage

Operating Temperature Extended -20°C to +70°C; Commercial 0°C to +70°C;

Industrial -40°C to +85°C

Symbol Parameter Min Typ Max Unit Conditions

VIH CMOS input high voltage 0.65 × VDDIO -VDDIO + 0.3 VVDDIO = 2.5 V

VIL CMOS input low voltage VSS − 0.3 -0.25 × VDDIO VVDDIO = 2.5 V

VT+ Schmitt trigger positive going

threshold --2.1V

VT- Schmitt trigger negative going

threshold 0.8 - - V

Vhst Schmitt trigger hysteresis 0.1 - 0.4 V VIL to VIH

VOH

CMOS output high voltagea

Output drive 1a

Output drive 2a

VDD – 0.2

2.5

IOH = 0.1 mA

IOH = 4 mA

IOH = 12 mA

VOL

CMOS output low voltagea

Output drive 1a

Output drive 2a

0.3

0.5

IOL = –0.1 mA

IOL = –4mA

IOL = –12 mA

IIN Input leakage current - - 1.0 µA VIN = VDD or GND

IOZ Bidirectional 3-state leakage

currentb c 25 - 100 µA VOUT = VDD or GND

CIN Input capacitance 8 - 10.0 pF

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

Note: 1) Total power consumption = IDDCORE x2.5V+IDD

IO x3.3V

2) A typical design will provide 3.3 V to the I/O supply (i.e., VDDIO), and 2.5 V to the remaining logic. This is to allow the I/O to be

compatible with 3.3 V powered external logic (i.e., 3.3 V SDRAMs).

2) Pull-up current = 50 µA typical at VDD =3.3V.

COUT Output capacitance 8 - 10.0 pF

CI/O Transceiver capacitance 8 - 10.0 pF

IDDSTANDBY

@ 25 C

Standby current consumption1

Core, Osc, RTC @2.5 V

I/O @ 3.3 V

µA

Only nPOR, nPWRFAIL,

nURESET, PE0, PE1, and RTS

are driven, while all other float,

VIH = VDD ± 0.1 V,

VIL = GND ± 0.1 V

IDDSTANDBY

@ 70 C

Standby current consumption1

Core, Osc, RTC @2.5 V

I/O @ 3.3 V

570

111

µA

Only nPOR, nPWRFAIL,

nURESET, PE0, PE1, and RTS

are driven, while all other float,

VIH = VDD ± 0.1 V,

VIL = GND ± 0.1 V

IDDSTANDBY

@ 85 C

Standby current consumption1

Core, Osc, RTC @2.5 V

I/O @ 3.3 V

1693

163

µA

Only nPOR, nPWRFAIL,

nURESET, PE0, PE1, and RTS

are driven, while all other float,

VIH = VDD ± 0.1 V,

VIL = GND ± 0.1 V

IDDidle

at 74 MHz

Idle current consumption1

Core, Osc, RTC @2.5 V

I/O @ 3.3 V

Both oscillators running, CPU

static, Cache enabled, LCD

disabled, VIH = VDD ± 0.1 V, VIL

= GND ± 0.1 V

VDDSTANDBY Standby supply voltage 2.0 - - V

Minimum standby voltage for

state retention, internal SRAM

cache, and RTC operation only

a. Refer to the strength column in the pin assignment tables for all package types.

b. Assumes buffer has no pull-up or pull-down resistors.

c. The leakage value given assumes that the pin is configured as an input pin but is not currently being driven.

Symbol Parameter Min Typ Max Unit Conditions



EP7311

High-Performance, Low-Power System on Chip

Timings

Timing Diagram Conventions

This data sheet contains timing diagrams. The following key explains the components used in these diagrams. Any

variations are clearly labelled when they occur. Therefore, no additional meaning should be attached unless

specifically stated.

Timing Conditions

Unless specified otherwise, the following conditions are true for all timing measurements. All characteristics are

specified at VDDIO =3.1-3.5VandV

SS = 0 V over an operating temperature of -40°Cto+85°C. Pin loadings is 50 pF.

The timing values are referenced to 1/2 VDD.

Clock

H igh to Low

H igh/Low to H igh

Bus C hange

Bus Valid

U n d e fin e d /In v a lid

V a lid B u s to T ris ta te

Bus/Signal O m ission

Figure 2. Legend for Timing Diagrams

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

SDRAM Interface

Figure 3 through Figure 6 define the timings associated with all phases of the SDRAM. The following table contains the

valuesforthetimingsofeachoftheSDRAMmodes.

Parameter Symbol Min Typ Max Unit

SDCLK rising edge to SDCS assert delay time tCSa 024ns

SDCLK rising edge to SDCS deassert delay time tCSd − 32 10ns

SDCLK rising edge to SDRAS assert delay time tRAa 137ns

SDCLK rising edge to SDRAS deassert delay time tRAd − 31 10ns

SDCLK rising edge to SDRAS invalid delay time tRAnv 247ns

SDCLK rising edge to SDCAS assert delay time tCAa − 22 5 ns

SDCLK rising edge to SDCAS deassert delay time tCAd − 50 3 ns

SDCLK rising edge to ADDR transition time tADv − 31 5 ns

SDCLK rising edge to ADDR invalid delay time tADx − 22 5 ns

SDCLK rising edge to SDMWE assert delay time tMWa − 21 5 ns

SDCLK rising edge to SDMWE deassert delay time tMWd − 40 4 ns

DATA transition to SDCLK rising edge time tDAs --2ns

SDCLK rising edge to DATA transition hold time tDAh --1ns

SDCLK rising edge to DATA transition delay time tDAd 0-15ns



EP7311

High-Performance, Low-Power System on Chip

SDRAM Load Mode Register Cycle

Note: 1. Timings are shown with CAS latency = 2

2. The SDCLK signal may be phase shifted relative to the rest of the SDRAM control and data signals due to uneven loading.

Designers should take care to ensure that delays between SDRAM control and data signals are approximately equal

SDCLK

SDCS

SDRAS

SDCAS

ADDR

DATA

SDQM

SDMWE

tCSa

tRAa

tCAa

tMWa

tADv tADx

tRAd

tCSd

tCAd

tMWd

Figure 3. SDRAM Load Mode Register Cycle Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

SDRAM Burst Read Cycle

Note: 1. Timings are shown with CAS latency = 2

2. The SDCLK signal may be phase shifted relative to the rest of the SDRAM control and data signals due to uneven loading.

Designers should take care to ensure that delays between SDRAM control and data signals are approximately equal.

ADRAS ADCAS

SDCLK

SDCS

SDRAS

SDCAS

SDQM

[0:3]

ADDR

DATA

SDMWE

D1 D4D3D2

tADv tADv

tCSd

tCSa tCSa

tCAa

tRAd

tCSd

tCAd

tRAa

tDAh

tDAs

tDAh

tDAs

tDAh

tDAs

tDAh

tDAs

tRAnv

Figure 4. SDRAM Burst Read Cycle Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

SDRAM Burst Write Cycle

Note: 1. Timings are shown with CAS latency = 2

2. The SDCLK signal may be phase shifted relative to the rest of the SDRAM control and data signals due to uneven loading.

Designers should take care to ensure that delays between SDRAM control and data signals are approximately equal

SDCLK

SDCS

SDRAS

SDCAS

SDQM

ADDR

DATA

SDMWE

ADRAS ADCAS

D4D3D2

tCSa

tRAa

tCAa

tCSa

tCSd

tRAd

tCSd

tCAd

tADv

tDAd

tADv

tDAd tDAd tDAd

tMWa tMWd

Figure 5. SDRAM Burst Write Cycle Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

SDRAM Refresh Cycle

Note: 1. Timings are shown with CAS latency = 2

2. The SDCLK signal may be phase shifted relative to the rest of the SDRAM control and data signals due to uneven loading.

Designers should take care to ensure that delays between SDRAM control and data signals are approximately equal

SDCLK

SDCS

SDRAS

SDCAS

SDQM

[3:0]

SDMWE

SDATA

ADDR

tCSa

tRAa

tCSd

tRAd

tCAa

tCAd

Figure 6. SDRAM Refresh Cycle Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

Static Memory

Figure 7 through Figure 10 define the timings associated with all phases of the Static Memory. The following table

contains the values for the timings of each of the Static Memory modes.

Parameter Symbol Min Typ Max Unit

EXPCLK rising edge to nCS assert delay time tCSd 2820ns

EXPCLK falling edge to nCS deassert hold time tCSh 2720ns

EXPCLK rising edge to A assert delay time tAd 4916ns

EXPCLK falling edge to A deassert hold time tAh 31019ns

EXPCLK rising edge to nMWE assert delay time tMWd 3610ns

EXPCLK rising edge to nMWE deassert hold time tMWh 3610ns

EXPCLK falling edge to nMOE assert delay time tMOEd 3710ns

EXPCLK falling edge to nMOE deassert hold time tMOEh 2710ns

EXPCLK falling edge to HALFWORD deassert delay time tHWd 2820ns

EXPCLK falling edge to WORD assert delay time tWDd 2816ns

EXPCLK rising edge to data valid delay time tDv 81321ns

EXPCLK falling edge to data invalid delay time tDnv 61530ns

Data setup to EXPCLK falling edge time tDs --1ns

EXPCLK falling edge to data hold time tDh --3ns

EXPCLK rising edge to WRITE assert delay time tWRd 51123ns

EXPREADY setup to EXPCLK falling edge time tEXs --0ns

EXPCLK falling edge to EXPREADY hold time tEXh --0ns

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

Static Memory Single Read Cycle

Note: 1. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at

18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is

sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period

where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.

2. Address, Halfword, Word, and Write hold state until next cycle.

EXPCLK

nCS

nMWE

HALF-

WORD

WRITE

nMOE

tCSd

tAd

tCSh

tMOEh

tDh

tDs

tHWd

tWDd

tWRd

tMOEd

EXPRDY

tEXh

tEXs

Figure 7. Static Memory Single Read Cycle Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

Static Memory Single Write Cycle

Note: 1. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at

18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is

sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period

where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.

2. Zero wait states for sequential writes is not permitted for memory devices which use nMWE pin, as this cannot be driven with

valid timing under zero wait state conditions.

3. Address, Data, Halfword, Word, and Write hold state until next cycle.

EXPCLK

nCS

nMWE

HALF-

WORD

WRITE

tHWd

tWDd

tCSd

tAd

tMWd

tDv

tMWh

tCSh

nMOE

EXPRDY

tEXh

tEXs

Figure 8. Static Memory Single Write Cycle Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

Static Memory Burst Read Cycle

Note: 1. Four cycles are shown in the above diagram (minimum wait states, 1-0-0-0). This is the maximum number of consecutive

cycles that can be driven. The number of consecutive cycles can be programmed from 2 to 4, inclusively.

2. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at

18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is

sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period

where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.

3. Consecutive reads with sequential access enabled are identical except that the sequential access wait state field is used to

determine the number of wait states, and no idle cycles are inserted between successive non-sequential ROM/expansion

cycles. This improves performance so the SQAEN bit should always be set where possible.

4. Address, Halfword, Word, and Write hold state until next cycle.

EXPCLK

nCS

nMOE

HALF

WORD

nMWE

EXPRDY

WRITE

tCSd

tAd tAh

tAh tAh

tCSh

tMOEh

tMOEd

tEXs tEXh

tDs tDh tDs tDs tDs

tDh tDh tDh

tWRd

tHWd

tWDd

Figure 9. Static Memory Burst Read Cycle Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

Static Memory Burst Write Cycle

Note: 1. Four cycles are shown in the above diagram (minimum wait states, 1-1-1-1). This is the maximum number of consecutive

cycles that can be driven. The number of consecutive cycles can be programmed from 2 to 4, inclusively.

2. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at

18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is

sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period

where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.

3. Zero wait states for sequential writes is not permitted for memory devices which use nMWE pin, as this cannot be driven with

valid timing under zero wait state conditions.

4. Address, Data, Halfword, Word, and Write hold state until next cycle.

EXPCLK

nCS

nMOE

HALF

WORD

nMWE

EXPRDY

WRITE

tCSd

tAd

tMWd

tMWh

tMWd tMWd tMWd

tMWh tMWh tMWh

tAh tAh tAh

tEXs tEXh

tCSh

tDv tDv tDv

tDnv tDnv tDnv tDv

tHWd

tWDd

Figure 10. Static Memory Burst Write Cycle Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

SSI1 Interface

Parameter Symbol Min Max Unit

ADCCLK falling edge to nADCCSS deassert delay time tCd 910ms

ADCIN data setup to ADCCLK rising edge time tINs -15ns

ADCIN data hold from ADCCLK rising edge time tINh -14ns

ADCCLK falling edge to data valid delay time tOvd − 713 ns

ADCCLK falling edge to data invalid delay time tOd − 23 ns

ADC

CLK

nADC

CSS

ADCIN

ADC

OUT

tINs tINh

tCd

tOd

tOvd

Figure 11. SSI1 Interface Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

SSI2 Interface

Parameter Symbol Min Max Unit

SSICLK period (slave mode) tclk_per 185 2050 ns

SSICLK high time tclk_high 925 1025 ns

SSICLK low time tclk_low 925 1025 ns

SSICLK rise/fall time tclkrf 318ns

SSICLK rising edge to RX and/or TX frame sync high time tFRd -3ns

SSICLK rising edge to RX and/or TX frame sync low time tFRa -8ns

SSIRXFR and/or SSITXFR period tFR_per 960 990 ns

SSIRXDA setup to SSICLK falling edge time tRXs 37ns

SSIRXDA hold from SSICLK falling edge time tRXh 37ns

SSICLK rising edge to SSITXDA data valid delay time tTXd -2ns

SSITXDA valid time tTXv 960 990 ns

SSI

CLK

SSIRXFR/

SSITXFR

SSI

TXDA

SSI

RXDA D1D7

D2 D1

tclk_per tclk_high tclk_low

tFRd tFR_per

tRXs

tTXd

tFRa

tRXh

tclkrf

tTXv

Figure 12. SSI2 Interface Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

LCD Interface

Parameter Symbol Min Max Unit

CL[2] falling to CL[1] rising delay time tCL1d − 10 25 ns

CL[1] falling to CL[2] rising delay time tCL2d 80 3,475 ns

CL[1] falling to FRM transition time tFRMd 300 10,425 ns

CL[1] falling to M transition time tMd − 10 20 ns

CL[2] rising to DD (display data) transition time tDDd − 10 20 ns

CL[2]

CL[1]

FRM

DD [3:0]

tCL1d

tFRMd

tMd

tDDd

tCL2d

Figure 13. LCD Controller Timing Measurement



EP7311

High-Performance, Low-Power System on Chip

JTAG Interface

Parameter Symbol Min Max Units

TCK clock period tclk_per 2-ns

TCK clock high time tclk_high 1-ns

TCK clock low time tclk_low 1-ns

JTAG port setup time tJPs -0ns

JTAG port hold time tJPh -3ns

JTAG port clock to output tJPco -10ns

JTAG port high impedance to valid output tJPzx -12ns

JTAG port valid output to high impedance tJPxz -19ns

TDO

TCK

TDI

TMS

tJPh

tclk_high tclk_low

tJPzx tJPco tJPxz

tclk_per

tJPs

Figure 14. JTAG Timing Measurement

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

Packages

208-Pin LQFP Package Characteristics

208-Pin LQFP Package Specifications

Note: 1) Dimensions are in millimeters (inches), and controlling dimension is millimeter.

2) Drawing above does not reflect exact package pin count.

3) Before beginning any new design with this device, please contact Cirrus Logic for the latest package information.

4) For pin locations, please see Figure 16. For pin descriptions see the EP7311 User’s Manual.

Figure 15. 208-Pin LQFP Package Outline Drawing

Pin 1 Indicator

29.60 (1.165)

30.40 (1.197)

0.17 (0.007)

0.27 (0.011)

27.80 (1.094)

28.20 (1.110)

0.50

(0.0197)

BSC

29.60 (1.165)

30.40 (1.197)

27.80 (1.094)

28.20 (1.110)

1.35 (0.053)

1.45 (0.057)

0°MIN

7°MAX

0.09 (0.004)

0.20 (0.008)

1.40 (0.055)

0.45 (0.018)

0.75 (0.030)

0.05 (0.002)

1.00 (0.039) BSC

Pin 1

Pin 208

1.60 (0.063) 0.15 (0.006)

EP7311

208-Pin LQFP



EP7311

High-Performance, Low-Power System on Chip

208-Pin LQFP Pin Diagram

Note: 1. N/C should not be grounded but left as no connects.

2. Pin differences between the EP7211 and the EP7311 are bolded.

160

159

158

157

106

107

108

109

110

112

113

114

115

116

117

118

119

120

121

100

101

102

103

104

122

124

125

126

127

128

129

130

105

131

132

133

134

156

155

154

153

152

151

150

149

148

147

146

145

144

143

140

139

138

137

136

141

142

135

161

162

163

164

165

166

167

168

169

170

171

172

173

174

180

181

182

183

184

185

186

187

188

189

190

191

192

193

194

195

196

197

198

199

201

202

203

204

205

206

207

208

200

175

176

177

178

179

123

111

EP7311

208-Pin LQFP

(Top View)

nEXTPWR

BATOK

nPOR

VSSOSC

VDDOSC

MOSCIN

MOSCOUT

nURESET

WAKEUP

A[6]

D[6]

A[5]

D[5]

VDDIO

VSSIO

A[4]

D[4]

A[3]

D[3]

nPWRFL

A[2]

D[2]

A[1]

A[0]

D[0]

VDDCORE

VSSIO

VDDIO

CL[2]

CL[1]

FRM

DD[2]

DD[1]

DD[0]

nSDCS[1]

SDQM[3]

SDQM[2]

VDDIO

VSSIO

SDCLK

nMWE/nSDWE

nMOE/nSDCAS

nCS[0]

nCS[1]

nCS[2]

nCS[3]

D[7]

A[7]

D[8]

A[8]

D[9]

D[10]

A[10]

VSSIO

VDDIO

A[11]

D[12]

A[12]

D[13]

A[13]\DRA[14]

D[14]

DD[3]

D[17]

D[15]

A[17]

/DRA[10]

nTRST

VSSIO

VDDIO

D[18]

A[18

/DRA[9]

D[19]

A[19]

/DRA[8]

D[20]

VSSIO

A[21]

/DRA[6]

D[22]

D[23]

A[23]

/DRA[4]

D[24]

VSSIO

VDDIO

A[24]

/DRA[3]

HALFWORD

A[14]/DRA[13]

nBATCHG

A[25]/DRA[2]

D[25]

D[27]

A[27]/DRA[0]

VSSIO

D[28]

D[29]

D[30]

D[31]

BUZ

COL[0]

COL[1]

TCLK

VDDIO

COL[2]

COL[3]

COL[4]

COL[5]

COL[6]

COL[7]

FB[0]

VSSIO

FB[1]

ADCOUT

ADCCLK

DRIVE[0]

VDDIO

PD[2]

VSSIO

VSSCORE

nADCCS

ADCIN

SSIRXDA

SSIRXFR

SSITXDA

SSITXFR

VSSIO

SSICLK

PD[0]/LEDFLSH

PD[1]

PD[3]

A[22]

/DRA[5]

PD[4]

VDDIO

PD[5]

PD[6]/SDQM[0]

DRIVE[1]

PD[7]/SDQM[1]

D[26]

A[15]

/DRA[12]

D[16]

A[16]

/DRA[11]

nCS[4]

VDDCORE

A[26]/DRA[1]

D[21]

TMS

A[20]

/DRA[7]

SMPCLK

D[11]

A[9]

D[1]

VSSCORE

nSDCS[0

]

SDCKE

VSSIO

EXPCLK

WORD

WRITE/nSDRAS

RUN/CLKEN

EXPRDY

PB[7]

PB[6]

PB[5]

PB[4]

PB[3]

PB[2]

PB[1]

VSSIO

TDI

VDDIO

TDO

PE[2]/CLKSEL

nEXTFIQ

PA[6]

PA[5]

PA[4]

PA[3]

PA[2]

PA[1]

PA[0]

LEDDRV

TXD[2]

PHDIN

CTS

RXD[2]

DCD

DSR

RTCOUT

RTCIN

VSSIO

PA[7]

VDDIO

VSSIO

nCS[5]

PB[0]

TXD[1]

RXD[1]

nTEST[1]

nTEST[0]

EINT[3]

nEINT[2]

nEINT[1]

PE[1]BOOTSEL[1]

PE[0]BOOTSEL[0]

N/C

VSSRTC

VDDRTC

Figure 16. 208-Pin LQFP (Low Profile Quad Flat Pack) Pin Diagram

nMEDCHG/nBROM

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

208-Pin LQFP Numeric Pin Listing

Table T. 208-Pin LQFP Numeric Pin Listing

No. Signal Type Strength Reset

State

1 nCS[5] O 1 Low

2 VDDIO Pad Pwr

3 VSSIO Pad Gnd

4 EXPCLK I/O 1

5 WORD Out 1 Low

6 WRITE/nSDRAS Out 1 Low

7 RUN/CLKEN O 1 Low

8EXPRDY I 1

9 TXD[2] O 1 High

10 RXD[2] I

11 TDI I with p/u*

12 VSSIO Pad Gnd

13 PB[7] I/O 1 Input

14 PB[6] I/O 1 Input

15 PB[5] I/O 1 Input

16 PB[4] I/O 1 Input

17 PB[3] I/O 1 Input

18 PB[2] I/O 1 Input

19 PB[1]/PRDY2 I/O 1 Input

20 PB[0]/PRDY1 I/O 1 Input

21 VDDIO Pad Pwr

22 TDO O 1 Three state

23 PA[7] I/O 1 Input

24 PA[6] I/O 1 Input

25 PA[5] I/O 1 Input

26 PA[4] I/O 1 Input

27 PA[3] I/O 1 Input

28 PA[2] I/O 1 Input

29 PA[1] I/O 1 Input

30 PA[0] I/O 1 Input

31 LEDDRV O 1 Low

32 TXD[1] O 1 High

33 VSSIO Pad Gnd 1 High

34 PHDIN I

35 CTS I

36 RXD[1] I

37 DCD I

38 DSR I

39 nTEST[1] I With p/u*

40 nTEST[0] I With p/u*

41 EINT[3] I

42 nEINT[2] I

43 nEINT[1] I

44 nEXTFIQ I

45 PE[2]/CLKSEL I/O 1 Input

46 PE[1]/

BOOTSEL[1] I/O 1 Input

47 PE[0]/

BOOTSEL[0] I/O 1 Input

48 VSSRTC RTC Gnd

49 RTCOUT O

50 RTCIN I

51 VDDRTC RTC power

52 N/C

53 PD[7]/SDQM[1] I/O 1 Low

54 PD[6]/SDQM[0] I/O 1 Low

55 PD[5] I/O 1 Low

56 PD[4] I/O 1 Low

57 VDDIO Pad Pwr

58 TMS I with p/u*

59 PD[3] I/O 1 Low

60 PD[2] I/O 1 Low

61 PD[1] I/O 1 Low

62 PD[0]/LEDFLSH I/O 1 Low

63 SSICLK I/O 1 Input

64 VSSIO Pad Gnd

65 SSITXFR I/O 1 Low

66 SSITXDA O 1 Low

67 SSIRXDA I

68 SSIRXFR I/O Input

69 ADCIN I

70 nADCCS O 1 High

71 VSSCORE Core Gnd

72 VDDCORE Core Pwr

73 VSSIO Pad Gnd

Table T. 208-Pin LQFP Numeric Pin Listing (Continued)

No. Signal Type Strength Reset

State



EP7311

High-Performance, Low-Power System on Chip

74 VDDIO Pad Pwr

75 DRIVE[1] I/O 2 High /

Low

76 DRIVE[0] I/O 2 High /

Low

77 ADCCLK O 1 Low

78 ADCOUT O 1 Low

79 SMPCLK O 1 Low

80 FB[1] I

81 VSSIO Pad Gnd

82 FB[0] I

83 COL[7] O 1 High

84 COL[6] O 1 High

85 COL[5] O 1 High

86 COL[4] O 1 High

87 COL[3] O 1 High

88 COL[2] O 1 High

89 VDDIO Pad Pwr

90 TCLK I

91 COL[1] O 1 High

92 COL[0] O 1 High

93 BUZ O 1 Low

94 D[31] I/O 1 Low

95 D[30] I/O 1 Low

96 D[29] I/O 1 Low

97 D[28] I/O 1 Low

98 VSSIO Pad Gnd

99 A[27]/DRA[0] O 2 Low

100 D[27] I/O 1 Low

101 A[26]/DRA[1] O 2 Low

102 D[26] I/O 1 Low

103 A[25]/DRA[2] O 2 Low

104 D[25] I/O 1 Low

105 HALFWORD O 1 Low

106 A[24]/DRA[3] O 1 Low

107 VDDIO Pad Pwr —

108 VSSIO Pad Gnd —

109 D[24] I/O 1 Low

110 A[23]/DRA[4] O 1 Low

Table T. 208-Pin LQFP Numeric Pin Listing (Continued)

No. Signal Type Strength Reset

State

111 D[23] I/O 1 Low

112 A[22]/DRA[5] O 1 Low

113 D[22] I/O 1 Low

114 A[21]/DRA[6] O 1 Low

115 D[21] I/O 1 Low

116 VSSIO Pad Gnd

117 A[20]/DRA[7] O 1 Low

118 D[20] I/O 1 Low

119 A[19]/DRA[8] O 1 Low

120 D[19] I/O 1 Low

121 A[18]/DRA[9] O 1 Low

122 D[18] I/O 1 Low

123 VDDIO Pad Pwr

124 VSSIO Pad Gnd

125 nTRST I

126 A[17]/DRA[10] O 1 Low

127 D[17] I/O 1 Low

128 A[16]/DRA[11] O 1 Low

129 D[16] I/O 1 Low

130 A[15]/DRA[12] O 1 Low

131 D[15] I/O 1 Low

132 A[14]/DRA[13] O 1 Low

133 D[14] I/O 1 Low

134 A[13]/DRA[14] O 1 Low

135 D[13] I/O 1 Low

136 A[12] O 1 Low

137 D[12] I/O 1 Low

138 A[11] O 1 Low

139 VDDIO Pad Pwr

140 VSSIO Pad Gnd

141 D[11] I/O 1 Low

142 A[10] O 1 Low

143 D[10] I/O 1 Low

144 A[9] O 1 Low

145 D[9] I/O 1 Low

146 A[8] O 1 Low

147 D[8] I/O 1 Low

148 A[7] O 1 Low

Table T. 208-Pin LQFP Numeric Pin Listing (Continued)

No. Signal Type Strength Reset

State

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

*With p/u’ means with internal pull-up on the pin.

149 VSSIO Pad Gnd

150 D[7] I/O 1 Low

151 nBATCHG I

152 nEXTPWR I

153 BATOK I

154 nPOR I Schmitt

155 nMEDCHG/

nBROM I

156 nURESET I Schmitt

157 VDDOSC Osc Pwr

158 MOSCIN Osc

159 MOSCOUT Osc

160 VSSOSC Osc Gnd

161 WAKEUP I Schmitt

162 nPWRFL I

163 A[6] O 1 Low

164 D[6] I/O 1 Low

165 A[5] Out 1 Low

166 D[5] I/O 1 Low

167 VDDIO Pad Pwr

168 VSSIO Pad Gnd

169 A[4] O 1 Low

170 D[4] I/O 1 Low

171 A[3] O 2 Low

172 D[3] I/O 1 Low

173 A[2] O 2 Low

174 VSSIO Pad Gnd

175 D[2] I/O 1 Low

176 A[1] O 2 Low

177 D[1] I/O 1 Low

178 A[0] O 2 Low

179 D[0] I/O 1 Low

180 VSS CORE Core Gnd

181 VDD CORE Core Pwr

182 VSSIO Pad Gnd

183 VDDIO Pad Pwr

184 CL[2] O 1 Low

185 CL[1] O 1 Low

186 FRM O 1 Low

Table T. 208-Pin LQFP Numeric Pin Listing (Continued)

No. Signal Type Strength Reset

State

187 M O 1 Low

188 DD[3] I/O 1 Low

189 DD[2] I/O 1 Low

190 VSSIO Pad Gnd

191 DD[1] I/O 1 Low

192 DD[0] I/O 1 Low

193 nSDCS[1] O 1 High

194 nSDCS[0] O 1 High

195 SDQM[3] I/O 2 Low

196 SDQM[2] I/O 2 Low

197 VDDIO Pad Pwr

198 VSSIO Pad Gnd

199 SDCKE I/O 2 Low

200 SDCLK I/O 2 Low

201 nMWE/nSDWE O 1 High

202 nMOE/nSDCAS O 1 High

203 VSSIO Pad Gnd

204 nCS[0] O 1 High

205 nCS[1] O 1 High

206 nCS[2] O 1 High

207 nCS[3] O 1 High

208 nCS[4] O 1 High

Table T. 208-Pin LQFP Numeric Pin Listing (Continued)

No. Signal Type Strength Reset

State



EP7311

High-Performance, Low-Power System on Chip

204-Ball TFBGA Package Characteristics

204-Ball TFBGA Package Specifications

Figure 17. 204-Ball TFBGA Package

Ø0.25~0.35(204X)

Ø0.15 M C A B

Ø0.08MC

0.15(4X)C

0.20~0.30

1.20 MAX.

SEATING PLANE

0.36 0.53±0.05

0.20 C

TOP VIEW BOTTOM VIEW

13±0.05

0.10 C

Ball Diameter :

Ball Pitch :

0.530.3

Substrate Thickness :

Mold Thickness :

0.65 0.36

0.65

19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

12.35

0.65

17 19 20181614 1512 139101178456231

A1 CORNER A1 CORNER

12.35

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

204-Ball TFBGA Pinout (Top View)

1 2 3 4 5 6 7 8 910111213141516 17 18 19 20

A VDDIO EXPCLK nCS3 nCS1 nMWE/

nSDWE SDQM2 nSDCS1 DD2 FRM CL1 GNDCOR

ED1 A2 D4 A5 nPWRFL MOSCOUT GNDIO GNDIO GNDIO A

B WORD VDDIO nCS5 nCS2 nMOE/

nSDCAS SDCKE nSDCS0 DD1 M CL2 D0 A1 D3 A4 D6 WAKEUP MOSCIN GNDIO GNDIO nURESET B

CRUN/

CLKEN EXPRDY VDDIO nCS4 nCS0 SDCLK SDQM3 DD0 DD3 VDDCO

RE A0 D2 A3 D5 A6 GNDOS

CVDDOSC GNDIO BATOK nPOR C

D PB7 RXD2 VDDIO GNDIO nBATCHG A7 D

EPB4 TXD2

WRITE/

nSDRAS

nMEDCHG

/nBROM nEXTPWR D9 E

F PB3 PB6 TDI D7 A8 D10 F

GPB1/

PRDY2 PB2 PB5 D8 A9 D11 G

HPA7 TDO PB0/

PRDY1 A10 D12 A12 H

JPA4 PA5 PA6 A11 D13 A13/

DRA14 J

K PA1 PA2 VDDIO D14 A14/

DRA13 D15 K

L TXD1 LEDDRV PA3 VDDIO D16 A16/

DRA11 L

MRXD1 CTS PA0 A15/

DRA12

A17/

DRA10 nTRST M

N DSR nTEST1 PHDIN D17 D19 A18/

DRA9 N

P EINT3 nEINT2 DCD D18 A20/

DRA7 D20 P

R nEXTFIQ PE2/

CLKSEL nTEST0 A19/

DRA8 D22 A21/

DRA6 R

PE1/

BOOT

SEL1

PE0/

BOOT

SEL0

nEINT1 D21 D23 A22/

DRA5 T

U GNDRTCRTCOUT RTCIN HALF

WORD D24 A23/

DRA4 U

V VDDRTC GNDIO GNDIO PD7/

SDQM1 PD4 PD2 SSICLK SSIRXDA nADCCS VDDIO ADCCLK COL7 COL4 TCLK BUZ D29 A26/

DRA1 VDDIO VDDIO A24/

DRA3 V

W GNDIO GNDIO GNDIO PD6/SD

QM0 TMS PD1 SSITXFR SSIRXFR GNDCO

RE DRIVE1 ADCOUT FB0 COL5 COL2 COL0 D30 A27/

DRA0 D26 VDDIO D25 W

Y GNDIO GNDIO GNDIO PD5 PD3

PD0/

LED

FLSH

SSITXDA ADCIN VDDCO

RE DRIVE0 SMPLCK FB1 COL6 COL3 COL1 D31 D28 D27 A25/

DRA2 VDDIO Y



EP7311

High-Performance, Low-Power System on Chip

204-Ball TFBGA Ball Listing

The list is ordered by ball location.

Table 21. 204-Ball TFBGA Ball Listing

Ball Location Name Strength†Reset

State Type Description

A1 VDDIO Pad power Digital I/O power,

3.3 V

A2 EXPCLK 1 I Expansion clock

input

A3 nCS[3] 1 High O Chip select 3

A4 nCS[1] 1 High O Chip select 1

A5 nMWE/nSDWE 1 High O

ROM, expansion

write enable/

SDRAM write enable

control signal

A6 SDQM[2] 2 Low O SDRAM byte lane

mask

A7 nSDCS[1] 1 High O SDRAM chip select

A8 DD[2] 1 Low O LCD serial display

data

A9 FRM 1 Low O

LCD frame

synchronization

pulse

A10 CL[1] 1 Low O LCD line clock

A11 VSSCORE Core ground Core ground

A12 D[1] 1 Low I/O Data I/O

A13 A[2] 2 Low O System byte address

A14 D[4] 1 Low I/O Data I/O

A15 A[5] 1 Low O System byte address

A16 nPWRFL IPower fail sense

input

A17 MOSCOUT O Main oscillator out

A18 VSSIO Pad ground I/O ground

A19 VSSIO Pad ground I/O ground

A20 VSSIO Pad ground I/O ground

B1 WORD 1 Low O Word access select

output

B2 VDDIO Pad power Digital I/O power, 3.3

B3 nCS[5] 1 Low O Chip select 5

B4 nCS[2] 1 High O Chip select 2

B5 nMOE/nSDCAS 1 High O

ROM, expansion OP

enable/SDRAM CAS

control signal

B6 SDCKE 2 Low O SDRAM clock

enable output

B7 nSDCS[0] 1 High O SDRAM chip select

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

B8 DD[1] 1 Low O LCD serial display

data

B9 M 1 Low O LCD AC bias drive

B10 CL[2] 1 Low 0 LCD pixel clock out

B11 D[0] 1 Low I/O Data I/O

B12 A[1] 2 Low O System byte address

B13 D[3] 2 Low I/O Data I/O

B14 A[4] 1 Low O System byte address

B15 D[6] 1 Low I/O Data I/O

B16 WAKEUP Schmitt I System wake up

input

B17 MOSCIN I Main oscillator input

B18 VSSIO Pad ground I/O ground

B19 VSSIO Pad ground I/O ground

B20 nURESET Schmitt I User reset input

C1 RUN/CLKEN 1 Low 0 Run output / clock

enable output

C2 EXPRDY 1 I Expansion port

ready input

C3 VDDIO Pad power Digital I/O power,

3.3 V

C4 nCS[4] 1 High O Chip select 4

C5 nCS[0] 1 High O Chip select 0

C6 SDCLK 2 Low O SDRAM clock out

C7 SDQM[3] 2 Low O SDRAM byte lane

mask

C8 DD[0] 1 Low O LCD serial display

data

C9 DD[3] 1 Low O LCD serial display

data

C10 VDDCORE Core power Digital core power,

2.5 V

C11 A[0] 2 Low O System byte address

C12 D[2] 1 Low I/O Data I/O

C13 A[3] 2 Low O System byte address

C14 D[5] 1 Low I/O Data I/O

C15 A[6] 1 Low O System byte address

C16 VSSOSC Oscillator ground PLL ground

C17 VDDOSC Oscillator power Oscillator power in,

2.5V

C18 VSSIO Pad ground I/O ground

C19 BATOK I Battery ok input

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description



EP7311

High-Performance, Low-Power System on Chip

C20 nPOR Schmitt I Power-on reset input

D1 PB[7] 1 Input‡IGPIO port B

D2 RXD[2] IUART 2 receive data

input

D3 VDDIO Pad power Digital I/O power,

3.3V

D18 VSSIO Pad ground I/O ground

D19 nBATCHG IBattery changed

sense input

D20 A[7] 1 Low O System byte address

E1 PB[4] 1 Input‡IGPIO port B

E2 TXD[2] 1 High O UART 2 transmit

data output

E3 WRITE/nSDRAS 1 Low O

Transfer direction /

SDRAM RAS signal

output

E18 nMEDCHG/nBROM I

Media change

interrupt input /

internal ROM boot

enable

E19 nEXTPWR IExternal power

supply sense input

E20 D[9] 1 Low I/O Data I/O

F1 PB[3] 1 Input‡I/O GPIO port B

F2 PB[6] 1 Input‡I/O GPIO port B

F3 TDI with p/u* I JTAG data input

F18 D[7] 1 Low I/O Data I/O

F19 A[8] 1 Low O System byte address

F20 D[10] 1 Low I/O Data I/O

G1 PB[1] 1 Input‡I/O

G2 PB[2] 1 Input‡I/O GPIO port B

G3 PB[5] 1 Input‡I/O GPIO port B

G18 D[8] 1 Input‡ I/O Data I/O

G19 A[9] 1 Low O System byte address

G20 D[11] 1 Low I/O Data I/O

H1 PA[7] 1 Input‡I/O GPIO port A

H[2] TDO 1 Input‡O JTAG data out

H[3] PB[0] 1 Input‡I/O GPIO port B

H[18] A[10] 1 Low O System byte address

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

H19 D[12] 1 Low I/O Data I/O

H20 A[12] 1 Low O System byte address

J1 PA[4] 1 Input‡I/O GPIO port A

J2 PA[5] 1 Input‡I/O GPIO port A

J3 PA[6] 1 Input‡I/O GPIO port A

J18 A[11] 1 Low O System byte address

J19 D[13] 1 Low I/O Data I/O

J20 A[13]/DRA[14] 1 Low O System byte address

/ SDRAM address

K1 PA[1] 1 Input‡I/O GPIO port A

K2 PA[2] 1 Input‡I/O GPIO port A

K3 VDDIO Pad power Digital I/O power,

3.3V

K18 D[14] 1 Low I/O Data I/O

K19 A[14]/DRA[13] 1 Low O System byte address

/ SDRAM address

K20 D[15] 1 Low I/O Data I/O

L1 TXD[1] 1 High O UART 1 transmit

data out

L2 LEDDRV 1 Low O IR LED drive

L3 PA[3] 1 Input‡I/O GPIO port A

L18 VDDIO Pad power Digital I/O power,

3.3V

L19 D[16] 1 Low I/O Data I/O

L20 A[16]/DRA[11] 1 Low O System byte address

/ SDRAM address

M1 RXD[1] IUART 1 receive data

input

M2 CTS IUART 1 clear to

send input

M3 PA[0] 1 Input‡I/O GPIO port A

M18 A[15]/DRA[12] 1 Low O System byte address

/ SDRAM address

M19 A[17]/DRA[10] 1 Low O System byte address

/ SDRAM address

M20 nTRST IJTAG async reset

input

N1 DSR IUART 1 data set

ready input

N2 nTEST[1] With p/u* I Test mode select

input

N3 PHDIN I Photodiode input

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description



EP7311

High-Performance, Low-Power System on Chip

N18 D[17] 1 Low I/O Data I/O

N19 D[19] 1 Low I/O Data I/O

N20 A[18]/DRA[9] 1 Low O System byte address

/ SDRAM address

P1 EINT[3] I External interrupt

P2 nEINT[2] IExternal interrupt

input

P3 DCD IUART 1 data carrier

detect

P18 D[18] 1 Low I/O Data I/O

P19 A[20]/DRA[7] 1 Low O System byte address

/ SDRAM address

P20 D[20] 1 Low I/O Data I/O

R1 nEXTFIQ IExternal fast

interrupt input

R2 PE[2]/CLKSEL 1 Input‡ I/O GPIO port E / clock

input mode select

R3 nTEST[0] With p/u* I Test mode select

input

R18 A[19]/DRA[8] 1 Low O System byte address

/ SDRAM address

R19 D[22] 1 Low I/O Data I/O

R20 A[21]/DRA[6] 1 Low O System byte address

/ SDRAM address

T1 PE[1]/BOOTSEL[1] 1 Input‡I/O GPIO port E / boot

mode select

T2 PE[0]/BOOTSEL[0] 1 Input‡I/O GPIO port E / boot

mode select

T3 nEINT[1] IExternal interrupt

input

T18 D[21] 1 Low I/O Data I/O

T19 D[23] 1 Low I/O Data I/O

T20 A[22]/DRA[5] 1 Low O System byte address

/ SDRAM address

U1 VSSRTC RTC ground Real time clock

ground

U2 RTCOUT OReal time clock

oscillator output

U3 RTCIN I/O Real time clock

oscillator input

U18 HALFWORD 1 Low O Halfword access

select output

U19 D[24] 1 Low I/O Data I/O

U20 A[23]/DRA[4] 1 Low O System byte address

/ SDRAM address

V1 VDDRTC RTC power Real time clock

power, 2.5V

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

V2 VSSIO Pad ground I/O ground

V3 VSSIO Pad ground I/O ground

V4 PD[7]/SDQM[1] 1 Low I/O

GPIO port D /

SDRAM byte lane

mask

V5 PD[4] 1 Low I/O GPIO port D

V6 PD[2] 1 Low I/O GPIO port D

V7 SSICLK 1 Input‡ I/O DAI/CODEC/SSI2

serial clock

V8 SSIRXDA I/O DAI/CODEC/SSI2

serial data input

V9 nADCCS 1 High O SSI1 ADC chip

select

V10 VDDIO Pad power Digital I/O power,

3.3V

V11 ADCCLK 1 Low O SSI1 ADC serial

clock

V12 COL[7] 1 High O Keyboard scanner

column drive

V13 COL[4] 1 High O Keyboard scanner

column drive

V14 TCLK IJTAG clock

V15 BUZ 1 Low O Buzzer drive output

V16 D[29] 1 Low I/O Data I/O

V17 A[26]/DRA[1] 2 Low O System byte address

/ SDRAM address

V18 VDDIO Pad power Digital I/O power,

3.3 V

V19 VDDIO Pad power Digital I/O power,

3.3 V

V20 A[24]/DRA[3] ‘Low O System byte address

/ SDRAM address

W1 VSSIO Pad ground I/O ground

W2 VSSIO Pad ground I/O ground

W3 VSSIO Pad ground I/O ground

W4 PD[6]/SDQM[0] 1 Low I/O

GPIO port D /

SDRAM byte lane

mask

W5 TMS with p/u* I JTAG mode select

W6 PD[1] 1 Low I/O GPIO port D

W7 SSITXFR 1 Low I/O DAI/CODEC/SSI2

frame sync

W8 SSIRXFR 1 Input‡ I/O DAI/CODEC/SSI2

frame sync

W9 VSSCORE Core Ground Core Ground

W10 DRIVE[1] 2 High /

Low I/O PWM drive output

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description



EP7311

High-Performance, Low-Power System on Chip

W11 ADCOUT 1 Low O SSI1 ADC serial

data output

W12 FB[0] I PWM feedback input

W13 COL[5] 1 High O Keyboard scanner

column drive

W14 COL[2] 1 High O Keyboard scanner

column drive

W15 COL[0] 1 High O Keyboard scanner

column drive

W16 D[30] 1 Low I/O Data I/O

W17 A[27]/DRA[0] 2 Low O System byte address

/ SDRAM address

W18 D[26] 1 Low I/O Data I/O

W19 VDDIO Pad power Digital I/O power,

3.3V

W20 D[25] 1 Low I/O Data I/O

Y1 VSSIO Pad ground I/O ground

Y2 VSSIO Pad ground I/O ground

Y3 VSSIO Pad ground I/O ground

Y4 PD[5] 1 Low I/O GPIO port D

Y5 PD[3] 1 Low I/O GPIO port D

Y6 PD[0]/LEDFLSH 1 Low I/O GPIO port D / LED

blinker output

Y7 SSITXDA 1 Low O DAI/CODEC/SSI2

serial data output

Y8 ADCIN ISSI1 ADC serial

input

Y9 VDDCORE Core power Digital core power,

2.5V

Y10 DRIVE[0] 2 Input‡I/O PWM drive output

Y11 SMPCLK 1 Low O SSI1 ADC sample

clock

Y12 FB[1] I PWM feedback input

Y13 COL[6] 1 High O Keyboard scanner

column drive

Y14 COL[3] 1 High O Keyboard scanner

column drive

Y15 COL[1] 1 High O Keyboard scanner

column drive

Y16 D[31] 1 Low I/O Data I/O

Y17 D[28] 1 Low I/O Data I/O

Y18 D[27] 1 Low I/O Data I/O

Y19 A[25]/DRA[2] 2 Low O System byte address

/ SDRAM address

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

*“With p/u” means with internal pull-up of 100 KOhms on the pin.

† Strength 1 = 4 ma

Strength 2 = 12 ma

‡Input. Port A,B,D,E GPIOs default to input at nPOR and URESET conditions.

256-Ball PBGA Package Characteristics

256-Ball PBGA Package Specifications

Figure 18. 256-Ball PBGA Package

Note: 1) For pin locations see Table V.

2) Dimensions are in millimeters (inches), and controlling dimension is millimeter

3) Before beginning any new EP7311 design, contact Cirrus Logic for the latest package information.

256-Ball PBGA Pinout (Top View)

Y20 VDDIO Pad power Digital I/O power,

3.3V

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

A VDDIO nCS[4] nCS[1] SDCLK SDQM[3] DD[1] M VDDIO D[0] D[2] A[3] VDDIO A[6] MOSCOUT VDDOSC VSSIO A

B nCS[5] VDDIO nCS[3] nMOE/

nSDCAS VDDIO nSDCS[1] DD[2] CL[1] VDDCORE D[1] A[2] A[4] A[5] WAKEUP VDDIO nURESET B

C VDDIO EXPCLK VSSIO VDDIO VSSIO VSSIO VSSIO VDDIO VSSIO VSSIO VSSIO VDDIO VSSIO VSSIO nPOR nEXTPWR C

DWRITE/

nSDRAS EXPRDY VSSIO VDDIO nCS[2] nMWE/

nSDWE nSDCS[0] CL[2] VSSRTC D[4] nPWRFL MOSCIN VDDIO VSSIO D[7] D[8] D

E RXD[2] PB[7] TDI WORD VSSIO nCS[0] SDQM[2] FRM A[0] D[5] VSSOSC VSSIO nMEDCHG/

nBROM VDDIO D[9] D[10] E

F PB[5] PB[3] VSSIO TXD[2] RUN/

CLKEN VSSIO SDCKE DD[3] A[1] D[6] VSSRTC BATOK nBATCHG VSSIO D[11] VDDIO F

G PB[1] VDDIO TDO PB[4] PB[6] VSSRTC VSSRTC DD[0] D[3] VSSRTC A[7] A[8] A[9] VSSIO D[12] D[13] G

H PA[7] PA[5] VSSIO PA[4] PA[6] PB[0] PB[2] VSSRTC VSSRTC A[10] A[11] A[12] A[13]/

DRA[14] VSSIO D[14] D[15] H

J PA[3] PA[1] VSSIO PA[2] PA[0] TXD[1] CTS VSSRTC VSSRTC A[17]/

DRA[10]

A[16]/

DRA[11]

A[15]/

DRA[12]

A[14]/

DRA[13] nTRST D[16] D[17] J

K LEDDRV PHDIN VSSIO DCD nTEST[1] EINT[3] VSSRTC ADCIN COL[4] TCLK D[20] D[19] D[18] VSSIO VDDIO VDDIO K

L RXD[1] DSR VDDIO nEINT[1] PE[2]/

CLKSEL VSSRTC PD[0]/

LEDFLSH VSSRTC COL[6] D[31] VSSRTC A[22]/

DRA[5]

A[21]/

DRA[6] VSSIO A[18]/

DRA[9]

A[19]/

DRA[8] L

M nTEST[0] nEINT[2] VDDIO PE[0]/

BOOTSEL[0] TMS VDDIO SSITXFR DRIVE[1] FB[0] COL[0] D[27] VSSIO A[23]/

DRA[4] VDDIO A[20]/

DRA[7] D[21] M

NnEXTFIQ PE[1]/

BOOTSEL[1] VSSIO VDDIO PD[5] PD[2] SSIRXDA ADCCLK SMPCLK COL[2] D[29] D[26] HALFWORD VSSIO D[22] D[23] N

P VSSRTC RTCOUT VSSIO VSSIO VDDIO VSSIO VSSIO VDDIO VSSIO VDDIO VSSIO VSSIO VDDIO VSSIO D[24] VDDIO P

R RTCIN VDDIO PD[4] PD[1] SSITXDA nADCCS VDDIO ADCOUT COL[7] COL[3] COL[1] D[30] A[27]/

DRA[0]

A[25]/

DRA[2] VDDIO A[24]\

DRA[3] R

T VDDRTC PD[7]/

SDQM[1]

PD[6]/

SDQM[0] PD[3] SSICLK SSIRXFR VDDCORE DRIVE[0] FB[1] COL[5] VDDIO BUZ D[28] A[26]/

DRA[1] D[25] VSSIO T

Table 21. 204-Ball TFBGA Ball Listing (Continued)

Ball Location Name Strength†Reset

State Type Description



EP7311

High-Performance, Low-Power System on Chip

TOP VIEW

17.00 (0.669)

15.00 (0.590)

SIDE VIEW

BOTTOM VIEW

1.00 (0.040)

Pin 1 Indicator

Pin 1 Corner

16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

15.00 (0.590)

2 Layer

17.00 (0.669)

1.00 (0.040)

30°TYP

REF

0.50

3 Places

0.85 (0.034)

±0.05 (.002)

0.40 (0.016)

±0.05 (.002)

0.36 (0.014)

17.00 (0.669)

±0.20 (.008)

±0.09 (0.004)

JEDEC #: MO-151

Ball Diameter: 0.50 mm ± 0.10 mm

17 ¥ 17 ¥ 1.61 mm body

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

256-Ball PBGA Ball Listing

The list is ordered by ball location.

Table V. 256-Ball PBGA Ball Listing

Ball Location Name Type Description

A1 VDDIO Pad power Digital I/O power, 3.3V

A2 nCS[4] O Chip select out

A3 nCS[1] O Chip select out

A4 SDCLK O SDRAM clock out

A5 SDQM[3] O SDRAM byte lane mask

A6 DD[1] O LCD serial display data

A7 M O LCD AC bias drive

A8 VDDIO Pad power Digital I/O power, 3.3V

A9 D[0] I/O Data I/O

A10 D[2] I/O Data I/O

A11 A[3] O System byte address

A12 VDDIO Pad power Digital I/O power, 3.3V

A13 A[6] O System byte address

A14 MOSCOUT O Main oscillator out

A15 VDDOSC Oscillator

power Oscillator power in, 2.5V

A16 VSSIO Pad ground I/O ground

B1 nCS[5] O Chip select out

B2 VDDIO Pad power I/O ground

B3 nCS[3] O Chip select out

B4 nMOE/nSDCAS O ROM, expansion OP enable/SDRAM

CAS control signal

B5 VDDIO Pad power Digital I/O power, 3.3V

B6 nSDCS[1] O SDRAM chip select out

B7 DD[2] O LCD serial display data

B8 CL[1] O LCD line clock

B9 VDDCORE Core power Digital core power, 2.5V

B10 D[1] I/O Data I/O

B11 A[2] O System byte address

B12 A[4] O System byte address

B13 A[5] O System byte address

B14 WAKEUP I System wake up input

B15 VDDIO Pad power Digital I/O power, 3.3V

B16 nURESET I User reset input

C1 VDDIO Pad power Digital I/O power, 3.3V

C2 EXPCLK I Expansion clock input

C3 VSSIO Pad ground I/O ground

C4 VDDIO Pad power Digital I/O power, 3.3V

C5 VSSIO Pad ground I/O ground

C6 VSSIO Pad ground I/O ground

C7 VSSIO Pad ground I/O ground

C8 VDDIO Pad power Digital I/O power, 3.3V

C9 VSSIO Pad ground I/O ground

C10 VSSIO Pad ground I/O ground

C11 VSSIO Pad ground I/O ground

C12 VDDIO Pad power Digital I/O power, 3.3V

C13 VSSIO Pad ground I/O ground

C14 VSSIO Pad ground I/O ground

C15 nPOR I Power-on reset input

C16 nEXTPWR I External power supply sense input

D1 WRITE/nSDRAS O Transfer direction / SDRAM RAS signal

output

D2 EXPRDY I Expansion port ready input

D3 VSSIO Pad ground I/O ground

D4 VDDIO Pad power Digital I/O power, 3.3V

D5 nCS[2] O Chip select out

D6 nMWE/nSDWE O ROM, expansion write enable/ SDRAM

write enable control signal

D7 nSDCS[0] O SDRAM chip select out

D8 CL[2] O LCD pixel clock out

D9 VSSRTC Core ground Real time clock ground

D10 D[4] I/O Data I/O

D11 nPWRFL I Power fail sense input

D12 MOSCIN I Main oscillator input

D13 VDDIO Pad power Digital I/O power, 3.3V

D14 VSSIO Pad ground I/O ground

D15 D[7] I/O Data I/O

D16 D[8] I/O Data I/O

E1 RXD[2] I UART 2 receive data input

E2 PB[7] I GPIO port B

E3 TDI I JTAG data input

E4 WORD O Word access select output

E5 VSSIO Pad ground I/O ground

E6 nCS[0] O Chip select out

E7 SDQM[2] O SDRAM byte lane mask

E8 FRM O LCD frame synchronization pulse

E9 A[0] O System byte address

E10 D[5] I/O Data I/O

E11 VSSOSC Oscillator

ground PLL ground

E12 VSSIO Pad ground I/O ground

E13 nMEDCHG/nBROM I Media change interrupt input / internal

ROM boot enable

E14 VDDIO Pad power Digital I/O power, 3.3V

E15 D[9] I/O Data I/O

E16 D[10] I/O Data I/O

F1 PB[5] I GPIO port B

F2 PB[3] I GPIO port B

F3 VSSIO Pad ground I/O ground

F4 TXD[2] O UART 2 transmit data output

F5 RUN/CLKEN O Run output / clock enable output

F6 VSSIO Pad ground I/O ground

Table V. 256-Ball PBGA Ball Listing (Continued)

Ball Location Name Type Description



EP7311

High-Performance, Low-Power System on Chip

F7 SDCKE O SDRAM clock enable output

F8 DD[3] O LCD serial display data

F9 A[1] O System byte address

F10 D[6] I/O Data I/O

F11 VSSRTC RTC ground Real time clock ground

F12 BATOK I Battery ok input

F13 nBATCHG I Battery changed sense input

F14 VSSIO Pad ground I/O ground

F15 D[11] I/O Data I/O

F16 VDDIO Pad power Digital I/O power, 3.3V

G1 PB[1] I GPIO port B

G2 VDDIO Pad power Digital I/O power, 3.3V

G3 TDO O JTAG data out

G4 PB[4] I GPIO port B

G5 PB[6] I GPIO port B

G6 VSSRTC Core ground Real time clock ground

G7 VSSRTC RTC ground Real time clock ground

G8 DD[0] O LCD serial display data

G9 D[3] I/O Data I/O

G10 VSSRTC RTC ground Real time clock ground

G11 A[7] O System byte address

G12 A[8] O System byte address

G13 A[9] O System byte address

G14 VSSIO Pad ground I/O ground

G15 D[12] I/O Data I/O

G16 D[13] I/O Data I/O

H1 PA[7] I GPIO port A

H2 PA[5] I GPIO port A

H3 VSSIO Pad ground I/O ground

H4 PA[4] I GPIO port A

H5 PA[6] I GPIO port A

H6 PB[0] I GPIO port B

H7 PB[2] I GPIO port B

H8 VSSRTC RTC ground Real time clock ground

H9 VSSRTC RTC ground Real time clock ground

H10 A[10] O System byte address

H11 A[11] O System byte address

H12 A[12] O System byte address

H13 A[13]/DRA[14] O System byte address / SDRAM address

H14 VSSIO Pad ground I/O ground

H15 D[14] I/O Data I/O

H16 D[15] I/O Data I/O

J1 PA[3] I GPIO port A

J2 PA[1] I GPIO port A

J3 VSSIO Pad ground I/O ground

J4 PA[2] I GPIO port A

J5 PA[0] I GPIO port A

J6 TXD[1] O UART 1 transmit data out

Table V. 256-Ball PBGA Ball Listing (Continued)

Ball Location Name Type Description

J7 CTS I UART 1 clear to send input

J8 VSSRTC RTC ground Real time clock ground

J9 VSSRTC RTC ground Real time clock ground

J10 A[17]/DRA[10] O System byte address / SDRAM address

J11 A[16]/DRA[11] O System byte address / SDRAM address

J12 A[15]/DRA[12] O System byte address / SDRAM address

J13 A[14]/DRA[13] O System byte address / SDRAM address

J14 nTRST I JTAG async reset input

J15 D[16] I/O Data I/O

J16 D[17] I/O Data I/O

K1 LEDDRV O IR LED drivet

K2 PHDIN I Photodiode input

K3 VSSIO Pad ground I/O ground

K4 DCD I UART 1 data carrier detect

K5 nTEST[1] I Test mode select input

K6 EINT[3] I External interrupt

K7 VSSRTC RTC ground Real time clock ground

K8 ADCIN I SSI1 ADC serial input

K9 COL[4] O Keyboard scanner column drive

K10 TCLK I JTAG clock

K11 D[20] I/O Data I/O

K12 D[19] I/O Data I/O

K13 D[18] I/O Data I/O

K14 VSSIO Pad ground I/O ground

K15 VDDIO Pad power Digital I/O power, 3.3V

K16 VDDIO Pad power Digital I/O power, 3.3V

L1 RXD[1] I UART 1 receive data input

L2 DSR I UART 1 data set ready input

L3 VDDIO Pad power Digital I/O power, 3.3V

L4 nEINT[1] I External interrupt input

L5 PE[2]/CLKSEL I GPIO port E / clock input mode select

L6 VSSRTC RTC ground Real time clock ground

L7 PD[0]/LEDFLSH I/O GPIO port D / LED blinker output

L8 VSSRTC Core ground Real time clock ground

L9 COL[6] O Keyboard scanner column drive

L10 D[31] I/O Data I/O

L11 VSSRTC RTC ground Real time clock ground

L12 A[22]/DRA[5] O System byte address / SDRAM address

L13 A[21]/DRA[6] O System byte address / SDRAM address

L14 VSSIO Pad ground I/O ground

L15 A[18]/DRA[9] O System byte address / SDRAM address

L16 A[19]/DRA[8] O System byte address / SDRAM address

M1 nTEST[0] I Test mode select input

M2 nEINT[2] I External interrupt input

M3 VDDIO Pad power Digital I/O power, 3.3V

M4 PE[0]/BOOTSEL[0] I GPIO port E / Boot mode select

M5 TMS I JTAG mode select

M6 VDDIO Pad power Digital I/O power, 3.3V

Table V. 256-Ball PBGA Ball Listing (Continued)

Ball Location Name Type Description

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

M7 SSITXFR I/O MCP/CODEC/SSI2 frame sync

M8 DRIVE[1] I/O PWM drive output

M9 FB[0] I PWM feedback input

M10 COL[0] O Keyboard scanner column drive

M11 D[27] I/O Data I/O

M12 VSSIO Pad ground I/O ground

M13 A[23]/DRA[4] O System byte address / SDRAM address

M14 VDDIO Pad power Digital I/O power, 3.3V

M15 A[20]/DRA[7] O System byte address / SDRAM address

M16 D[21] I/O Data I/O

N1 nEXTFIQ I External fast interrupt input

N2 PE[1]/BOOTSEL[1] I GPIO port E / boot mode select

N3 VSSIO Pad ground I/O ground

N4 VDDIO Pad power Digital I/O power, 3.3V

N5 PD[5] I/O GPIO port D

N6 PD[2] I/O GPIO port D

N7 SSIRXDA I/O MCP/CODEC/SSI2 serial data input

N8 ADCCLK O SSI1 ADC serial clock

N9 SMPCLK O SSI1 ADC sample clock

N10 COL[2] O Keyboard scanner column drive

N11 D[29] I/O Data I/O

N12 D[26] I/O Data I/O

N13 HALFWORD O Halfword access select output

N14 VSSIO Pad ground I/O ground

N15 D[22] I/O Data I/O

N16 D[23] I/O Data I/O

P1 VSSRTC RTC ground Real time clock ground

P2 RTCOUT O Real time clock oscillator output

P3 VSSIO Pad ground I/O ground

P4 VSSIO Pad ground I/O ground

P5 VDDIO Pad power Digital I/O power, 3.3V

P6 VSSIO Pad ground I/O ground

P7 VSSIO Pad ground I/O ground

P8 VDDIO Pad power Digital I/O power, 3.3V

P9 VSSIO Pad ground I/O ground

P10 VDDIO Pad power Digital I/O power, 3.3V

P11 VSSIO Pad ground I/O ground

P12 VSSIO Pad ground I/O ground

P13 VDDIO Pad power Digital I/O power

P14 VSSIO Pad ground I/O ground

P15 D[24] I/O Data I/O

P16 VDDIO Pad power Digital I/O power, 3.3V

R1 RTCIN I/O Real time clock oscillator input

R2 VDDIO Pad power Digital I/O power, 3.3V

R3 PD[4] I/O GPIO port D

R4 PD[1] I/O GPIO port D

R5 SSITXDA O MCP/CODEC/SSI2 serial data output

R6 nADCCS O SSI1 ADC chip select

Table V. 256-Ball PBGA Ball Listing (Continued)

Ball Location Name Type Description

R7 VDDIO Pad power Digital I/O power, 3.3V

R8 ADCOUT O SSI1 ADC serial data output

R9 COL[7] O Keyboard scanner column drive

R10 COL[3] O Keyboard scanner column drive

R11 COL[1] O Keyboard scanner column drive

R12 D[30] I/O Data I/O

R13 A[27]/DRA[0] O System byte address / SDRAM address

R14 A[25]/DRA[2] O System byte address / SDRAM address

R15 VDDIO Pad power Digital I/O power, 3.3V

R16 A[24]/DRA[3] O System byte address / SDRAM address

T1 VDDRTC RTC power Real time clock power, 2.5V

T2 PD[7]/SDQM[1] I/O GPIO port D / SDRAM byte lane mask

T3 PD[6]/SDQM[0] I/O GPIO port D / SDRAM byte lane mask

T4 PD[3] I/O GPIO port D

T5 SSICLK I/O MCP/CODEC/SSI2 serial clock

T6 SSIRXFR – MCP/CODEC/SSI2 frame sync

T7 VDDCORE Core power Core power, 2.5V

T8 DRIVE[0] I/O PWM drive output

T9 FB[1] I PWM feedback input

T10 COL[5] O Keyboard scanner column drive

T11 VDDIO Pad power Digital I/O power, 3.3V

T12 BUZ O Buzzer drive output

T13 D[28] I/O Data I/O

T14 A[26]/DRA[1] O System byte address / SDRAM address

T15 D[25] I/O Data I/O

T16 VSSIO Pad ground I/O ground

Table V. 256-Ball PBGA Ball Listing (Continued)

Ball Location Name Type Description



EP7311

High-Performance, Low-Power System on Chip

JTAG Boundary Scan Signal Ordering

Table W. JTAG Boundary Scan Signal Ordering

LQFP

Pin No.

TFBGA

Ball

PBGA

Ball Signal Type Position

1B3B1 nCS[5] O 1

4 A2 C2 EXPCLK I/O 3

5B1E4 WORD O 6

6 E3 D1 WRITE/nSDRAS O 8

7 C1 F5 RUN/CLKEN O 10

8C2D2 EXPRDY I 13

9E2F4 TXD2 O 14

10 D2 E1 RXD2 I 16

13 F3 E2 PB[7] I/O 17

14 D1 G5 PB[6] I/O 20

15 F2 F1 PB[5] I/O 23

16 G3 G4 PB[4] I/O 26

17 E1 F2 PB[3] I/O 29

18 F1 H7 PB[2] I/O 32

19 G2 G1 PB[1]/PRDY2 I/O 35

20 G1 H6 PB[0]/PRDY1 I/O 38

23 H3 H1 PA[7] I/O 41

24 H1 H5 PA[6] I/O 44

25 J3 H2 PA[5] I/O 47

26 J2 H4 PA[4] I/O 50

27 J1 J1 PA[3] I/O 53

28 L3 J4 PA[2] I/O 56

29 K2 J2 PA[1] I/O 59

30 K1 J5 PA[0] I/O 62

31 M3 K1 LEDDRV O 65

32 L2 J6 TXD1 O 67

34 L1 K2 PHDIN I 69

35 N3 J7 CTS I 70

36 M2 L1 RXD1 I 71

37 M1 K4 DCD I 72

38 P3 L2 DSR I 73

39 N1 K5 nTEST1 I 74

40 N2 M1 nTEST0 I 75

41 R3 K6 EINT3 I 76

42 P1 M2 nEINT2 I 77

43 P2 L4 nEINT1 I 78

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

44 T3 N1 nEXTFIQ I 79

45 R1 L5 PE[2]/CLKSEL I/O 80

46 R2 N2 PE[1]/BOOTSEL1 I/O 83

47 T1 M4 PE[0]/BOOTSEL0 I/O 86

53 T2 T2 PD[7]/SDQM[1] I/O 89

54 V4 T3 PD[6/SDQM[0]] I/O 92

55 W4 N5 PD[5] I/O 95

56 Y4 R3 PD[4] I/O 98

59 V5 T4 PD[3] I/O 101

60 W5 N6 PD[2] I/O 104

61 Y5 R4 PD[1] I/O 107

62 V6 L7 PD[0]/LEDFLSH O 110

68 W6 T6 SSIRXFR I/O 122

69 Y6 K8 ADCIN I 125

70 W8 R6 nADCCS O 126

75 Y8 M8 DRIVE1 I/O 128

76 V9 T8 DRIVE0 I/O 131

77 W10 N8 ADCCLK O 134

78 Y10 R8 ADCOUT O 136

79 V11 N9 SMPCLK O 138

80 W11 T9 FB1 I 140

82 Y11 M9 FB0 I 141

83 Y12 R9 COL7 O 142

84 W12 L9 COL6 O 144

85 V12 T10 COL5 O 146

86 Y13 K9 COL4 O 148

87 W13 R10 COL3 O 150

88 V13 N10 COL2 O 152

91 Y14 R11 COL1 O 154

92 W14 M10 COL0 O 156

93 A1 T12 BUZ O 158

94 V14 L10 D[31] I/O 160

95 Y15 R12 D[30] I/O 163

96 W15 N11 D[29] I/O 166

97 V15 T13 D[28] I/O 169

99 Y16 R13 A[27]/DRA[0] Out 172

100 W16 M11 D[27] I/O 174

101 V16 T14 A[26]/DRA[1] O 177

Table W. JTAG Boundary Scan Signal Ordering (Continued)

LQFP

Pin No.

TFBGA

Ball

PBGA

Ball Signal Type Position



EP7311

High-Performance, Low-Power System on Chip

102 Y17 N12 D[26] I/O 179

103 W17 R14 A[25]/DRA[2] O 182

104 Y18 T15 D[25] I/O 184

105 V17 N13 HALFWORD O 187

106 W18 R16 A[24]/DRA[3] O 189

109 Y19 P15 D[24] I/O 191

110 W20 M13 A[23]/DRA[4] O 194

111 U18 N16 D[23] I/O 196

112 V20 L12 A[22]/DRA[5] O 199

113 U19 N15 D[22] I/O 201

114 U20 L13 A[21]/DRA[6] O 204

115 T19 M16 D[21] I/O 206

117 T20 M15 A[20]/DRA[7] O 209

118 R19 K11 D[20] I/O 211

119 R20 L16 A[19]/DRA[8] O 214

120 T18 K12 D[19] I/O 216

121 P19 L15 A[18]/DRA[9] O 219

122 P20 K13 D[18] I/O 221

126 R18 J10 A[17]/DRA[10] O 224

127 N19 J16 D[17] I/O 226

128 N20 J11 A[16]/DRA[11] O 229

129 P18 J15 D[16] I/O 231

130 M19 J12 A[15]/DRA[12] O 234

131 N18 H16 D[15] I/O 236

132 L20 J13 A[14]/DRA[13] O 239

133 L19 H15 D[14] I/O 241

134 M18 H13 A[13]/DRA[14] O 244

135 K20 G16 D[13] I/O 246

136 K19 H12 A[12] O 249

137 K18 G15 D[12] I/O 251

138 J20 H11 A[11] O 254

141 J19 F15 D[11] I/O 256

142 H20 H10 A[10] O 259

143 H19 E16 D[10] I/O 261

144 J18 G13 A[9] O 264

145 K3 E15 D[9] I/O 266

146 Y3 G12 A[8] O 269

147 G20 D16 D[8] I/O 271

Table W. JTAG Boundary Scan Signal Ordering (Continued)

LQFP

Pin No.

TFBGA

Ball

PBGA

Ball Signal Type Position

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

148 H18 G11 A[7] O 274

150 F20 D15 D[7] I/O 276

151 G19 F13 nBATCHG I 279

152 E20 C16 nEXTPWR I 280

153 F19 F12 BATOK I 281

154 G18 C15 nPOR I 282

155 D20 E13 nMEDCHG/nBROM I 283

156 F18 B16 nURESET I 284

161 D19 B14 WAKEUP I 285

162 E19 D11 nPWRFL I 286

163 C19 A13 A[6] O 287

164 C20 F10 D[6] I/O 289

165 E18 B13 A[5] O 292

166 B20 E10 D[5] I/O 294

169 B16 B12 A[4] O 297

170 A16 D10 D[4] I/O 299

171 C15 A11 A[3] O 302

172 B15 G9 D[3] I/O 304

173 A15 B11 A[2] O 307

175 C14 A10 D[2] I/O 309

176 B14 F9 A[1] O 312

177 A14 B10 D[1] I/O 314

178 C13 E9 A[0] O 317

179 B13 A9 D[0] I/O 319

184 A13 D8 CL2 O 322

185 C12 B8 CL1 O 324

186 B12 E8 FRM O 326

187 A12 A7 M O 328

188 C11 F8 DD[3] I/O 330

189 B11 B7 DD[2] I/O 333

191 B10 A6 DD[1] I/O 336

192 A10 G8 DD[0] I/O 339

193 A9 B6 nSDCS[1] O 342

194 B9 D7 nSDCS[0] O 344

195 C9 A5 SDQM[3] I/O 346

196 A8 E7 SDQM[2] I/O 349

199 B8 F7 SDCKE I/O 352

200 C8 A4 SDCLK I/O 355

Table W. JTAG Boundary Scan Signal Ordering (Continued)

LQFP

Pin No.

TFBGA

Ball

PBGA

Ball Signal Type Position



EP7311

High-Performance, Low-Power System on Chip

1) See EP7311 Users’ Manual for pin naming / functionality.

2) For each pad, the JTAG connection ordering is input,

output, then enable as applicable.

201 A7 D6 nMWE/nSDWE O 358

202 B7 B4 nMOE/nSDCAS O 360

204 C7 E6 nCS[0] O 362

205 A6 A3 nCS[1] O 364

206 B6 D5 nCS[2] O 366

207 C6 B3 nCS[3] O 368

208 A5 A2 nCS[4] O 370

Table W. JTAG Boundary Scan Signal Ordering (Continued)

LQFP

Pin No.

TFBGA

Ball

PBGA

Ball Signal Type Position

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

CONVENTIONS

This section presents acronyms, abbreviations, units of

measurement, and conventions used in this data sheet.

Acronyms and Abbreviations

Table X lists abbreviations and acronyms used in this

data sheet.

Units of Measurement

Table X. Acronyms and Abbreviations

Acronym/

Abbreviation Definition

A/D analog-to-digital

ADC analog-to-digital converter

CODEC coder / decoder

D/A digital-to-analog

DMA direct-memory access

EPB embedded peripheral bus

FCS frame check sequence

FIFO first in / first out

FIQ fast interrupt request

GPIO general purpose I/O

ICT in circuit test

IR infrared

IRQ standard interrupt request

IrDA Infrared Data Association

JTAG Joint Test Action Group

LCD liquid crystal display

LED light-emitting diode

LQFP low profile quad flat pack

LSB least significant bit

MIPS millions of instructions per second

MMU memory management unit

MSB most significant bit

PBGA plastic ball grid array

PCB printed circuit board

PDA personal digital assistant

PLL phase locked loop

p/u pull-up resistor

RISC reduced instruction set computer

RTC Real-Time Clock

SIR slow (9600–115.2 kbps) infrared

SRAM static random access memory

SSI synchronous serial interface

TAP test access port

TLB translation lookaside buffer

UART universal asynchronous receiver

Table Y. Unit of Measurement

Symbol Unit of Measure

°Cdegree Celsius

fs sample frequency

Hz hertz (cycle per second)

kbps kilobits per second

KB kilobyte (1,024 bytes)

kHz kilohertz

kΩkilohm

Mbps megabits (1,048,576 bits) per second

MB megabyte (1,048,576 bytes)

MBps megabytes per second

MHz megahertz (1,000 kilohertz)

µA microampere

µF microfarad

µWmicrowatt

µs microsecond (1,000 nanoseconds)

mA milliampere

mW milliwatt

ms millisecond (1,000 microseconds)

ns nanosecond

Vvolt

Wwatt

Table X. Acronyms and Abbreviations (Continued)

Acronym/

Abbreviation Definition



EP7311

High-Performance, Low-Power System on Chip

General Conventions

Hexadecimal numbers are presented with all letters in

uppercase and a lowercase “h” appended or with a 0x at

the beginning. For example, 0x14 and 03CAh are

hexadecimal numbers. Binary numbers are enclosed in

single quotation marks when in text (for example, ‘11’

designates a binary number). Numbers not indicated by

an “h”, 0x or quotation marks are decimal.

Registers are referred to by acronym, with bits listed in

brackets separated by a colon (:) (for example,

CODR[7:0]), and are described in the EP7311 User’s

Manual. The use of “TBD” indicates values that are “to

be determined,” “n/a” designates “not available,” and

“n/c” indicates a pin that is a “no connect.”

Pin Description Conventions

Abbreviations used for signal directions are listed in

Table Z.

Table Z. Pin Description Conventions

Abbreviation Direction

I Input

O Output

I/O Input or Output

DS506PP1



EP7311

High-Performance, Low-Power System on Chip

ORDERING INFORMATION

The order number for the device is:

Note: Contact Cirrus Logic for up-to-date information on revisions. Go to the Cirrus Logic Internet site at

http://cirrus.com/corporate/contacts to find contact information for your local sales representative.

EP7311 —CV —C

Product Line:

Embedded Processor

Part Number

Temperature Range:

Package Type:

V = Low Profile Quad Flat Pack

B = Plastic Ball Grid Array (17 mm x 17 mm)

Revision †

R = Reduced Ball Grid Array (13 mm x 13 mm)

C = Commercial

E = Extended Operating Version

I = Industrial Operating Version



EP7311

High-Performance, Low-Power System on Chip

Contacting Cirrus Logic Support

For a complete listing of Direct Sales, Distributor, and Sales Representative contacts, visit the Cirrus Logic web site at:

http://www.cirrus.com/corporate/contacts/sales.cfm

IMPORTANT NOTICE

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USE OF CIRRUS PRODUCTS IN CRITICAL APPLICATIONS, CUSTOMER AGREES, BY SUCH USE, TO FULLY INDEMNIFY CIRRUS, ITS OFFICERS, DIRECTORS,

EMPLOYEES, DISTRIBUTORS AND OTHER AGENTS FROM ANY AND ALL LIABILITY, INCLUDING ATTORNEYS' FEES AND COSTS, THAT MAY RESULT FROM

OR ARISE IN CONNECTION WITH THESE USES.

Cirrus Logic, Cirrus, the Cirrus Logic logo designs, Maverick, and MaverickKey are trademarks of Cirrus Logic, Inc. All other brand and product names in this document

may be trademarks or service marks of their respective owners.

LINUX is a registered trademark of Linus Torvalds.