BC327-25 - KEC Corporation

2008. 4. 24 1/2

SEMICONDUCTOR

TECHNICAL DATA

BC327

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 3

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : IC=-800mA.

DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).

For Complementary with NPN type BC337.

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current ICBO VCB=-45V, IE=0 - - -100 nA

DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630

Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V

Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V

Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 100 - MHz

Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 16 - pF

Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage VCBO -50 V

Collector-Emitter Voltage VCEO -45 V

Emitter-Base Voltage VEBO -5 V

Collector Current IC-800 mA

Base Current IB-200 mA

Emitter Current IE800 mA

Collector Power Dissipation PC625 mW

Junction Temperature Tj150

Storage Temperature Range Tstg -55 150