2015-12-23 1
2015-1 2-23
Silicon PIN Photodiode with Daylight Blocking Filter
Version 1.3
SFH 225 FA
Ordering Information
Features:
•Especially suitable for applications of 880 nm
•Short-switching time (typ. 20 ns)
•5 mm LED plastic package
•Also available on tape and reel
•The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
Applications
•Photointerrupters
•IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment
Type: Photocurrent Ordering Code
IP [µA]
λ = 870 nm, Ee = 1 mW/cm2,
VR = 5 V
SFH 225 FA 34 (≥ 25) Q62702P1051
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Version 1.3 SFH 225 FA
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 100 °C
Reverse voltage VR20 V
Total Power dissipation Ptot 150 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Parameter Symbol Values Unit
Photocurrent
(VR = 5 V, Ee = 1 mW/cm2 , λ = 870 nm)
(typ (min)) IP34 (≥ 25) µA
Wavelength of max. sensitivity (typ) λS max 900 nm
Spectral range of sensitivity (typ) λ10% (typ) 740
... 1120
nm
Radiant sensitive area (typ) A 4.84 mm2
Dimensions of radiant sensitive area (typ) L x W 2.2 x 2.2 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(VR = 10 V)
(typ (max)) IR2 (≤ 30) nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ) Sλ typ 0.65 A / W
Quantum yield of the chip
(λ = 870 nm)
(typ) η 0.93 Electro
ns
/Photon
Open-circuit voltage
(Ee = 0.5 mW/cm2, λ = 870 nm)
(typ (min)) VO330 (≥ 250) mV
Short-circuit current
(Ee = 0.5 mW/cm2, λ = 870 nm)
(typ) ISC 17 µA
Rise and fall time
(VR = 5 V, RL = 50 Ω, λ = 850 nm)
(typ) tr, tf0.02 µs
Forward voltage
(IF = 100 mA, E = 0)
(typ) VF1.3 V
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
(typ) C048 pF
Temperature coefficient of VO(typ) TCV-2.6 mV / K
Version 1.3 SFH 225 FA
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Temperature coefficient of ISC
(λ = 870 nm)
(typ) TCI0.1 % / K
Noise equivalent power
(VR = 10 V, λ = 870 nm)
(typ) NEP 0.039 pW /
Hz½
Detection limit
(VR = 10 V, λ = 870 nm)
(typ) D*5.6e12 cm x
Hz½ / W
Relative Spectral Sensitivity 1) page 9
Srel = f(λ)
Photocurrent / Open-Circuit Voltage 1) page 9
IP (VR = 5 V) / VO = f(Ee)
Parameter Symbol Values Unit
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
E
OHF01056
e
0
10
P
Ι
-1
10 10 110 210 4
10 0
10 1
10 2
10 3 4
10
3
10
2
10
1
10
10 0
VO
µA mV
Ι
P
VO
2
W/cmµ
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Version 1.3 SFH 225 FA
Power Consumption
Ptot = f(TA)
Dark Current 1) page 9
IR = f(VR), E = 0
Dark Current 1) page 9
IR = f(VR), E = 0
Capacitance 1) page 9
C = f(VR), f = 1 MHz, E = 0
T
OHF00394
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF02284
VR
Ι
R
0
10-1
100
101
102
nA
2 4 6 8 10 12 14 16 V 20
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Version 1.3 SFH 225 FA
Package Outline
Dimensions in mm (inch).
Package
5mm Radial (T 1 ¾), Epoxy
Approximate Weight:
0.1 g
Note
Packing information is available on the internet (online product catalog).
3.8 (0.150)
7.2 (0.283)
6.6 (0.260)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
1.1 (0.043)
0.7 (0.028)
0.6 (0.024)
0.4 (0.016) 0.75 (0.030)
0.45 (0.018)
35.5 (1.398)
33.5 (1.319)
0.5 (0.020)
0.3 (0.012)
3.1 (0.122)
2.6 (0.102)
5.1 (0.201)
4.6 (0.181)
Photosensitive
area GEOY6422
Cathode
Surface
not flat
Version 1.3 SFH 225 FA
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Recommended Solder Pad
Dimensions in mm.
Note:
pad 1: anode
TTW Soldering
IEC-61760-1 TTW
0
0s
OHA04645
50
100
150
200
250
300
t
T
˚C
235 ˚C - 260 ˚C
First wave
20 40 60 80 100 120 140 160 180 200 220 240
Second wave
10 s max., max. contact time 5 s per wave
Preheating
T
∆
100 ˚C
120 ˚C
130 ˚C
Typical
Cooling
ca. 3.5 K/s typical
ca. 2 K/s
ca. 5 K/s
Continuous line: typical process
Dotted line: process limits
< 150 K
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Version 1.3 SFH 225 FA
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
Version 1.3 SFH 225 FA
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Glossary
1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
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Version 1.3 SFH 225 FA
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
