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©2009-2010 by RF Monolithics, Inc. XVT9006 - 2/2/10
Electrical Characteristics
Characteristic Sym Notes Minimum Typical Maximum Units
Nominal Frequency Fo 40.000000 MHz
StorageTemperature Range -40 +85 °C
Operating Temperature Range -30 +85 °C
Power Supply Volt age Vcc 2.8 V
Output Voltage with Load 10 pF || 10 KΩVout 0.8 Vp-p
Output Waveform Clipped Sinewave
Power Supply Current Icc 2.0 mA
Control Voltage Vcon 1.4±1.0 V
Control Voltage Terminal Input Impedance 100K ohms
Frequency Tolerance after Reflow, Vcon = 1.5 V ±1.0 ppm max @ 25 °C ±3 °C
Frequency Stability: ppm
Versus Temperature, -30 to 85 °C ±2.0 ppm Versus Supply Voltage, 2.8 V ±5% ±0.3
Versus Load Var iation, 10 pF ||10 KΩ ±10% ±0.2
Aging ±1 ppm
Frequency Control Range, Vcon = 1.4±1.0 V ±10 ppm
Start Up Time, 90% of final RF level in Vp-p 2.0 ms
Harmonics -5.0 dBc
SSB Phase Noise @ 10 kHz Carrier Offset -130 dBc/Hz max
Stanard Shipping Quantity on 180 mm (7”) Reel 1000 units
Lid Symbolization 9006 // YWWS
SM3225-4 Case
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Application: Wireless Communication Devices
• Excellent Fr equency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.3 mm Surface-Mount Case
• Complies with Directive 2002/95/EC (RoHS)
40 MHz
VCTCXO
XVT9006
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The desi gn, manufact uring process, and specifications of this device are subject to change without notice.
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Preliminary