S S D D G G 27 2 T- SO APL1001J S ISOTOP(R) 1000V 18.0A 0.60W "UL Recognized" File No. E145592 (S) POWER MOS IV (R) SINGLE DIE ISOTOP(R) PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APL1001J UNIT 1000 Volts Drain-Source Voltage Continuous Drain Current @ TC = 25C 18 Amps 1 IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 520 Watts Linear Derating Factor 4.16 W/C PD TJ,TSTG TL and Inductive Current Clamped 72 Operating and Storage Junction Temperature Range -55 to 150 C Lead Temperature: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1000 Volts ID(ON) On State Drain Current 18 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP MAX 0.60 (VGS = 10V, 0.5 ID [Cont.]) UNIT Ohms Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage A (VDS = VGS, ID = 2.5mA) 2 THERMAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case RJA Junction to Ambient MIN 0.24 C/W 40 Volts 2500 Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb*in CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5904 Rev C 3-2002 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque TYP DYNAMIC CHARACTERISTICS Symbol APL1001J Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6000 7200 Coss Output Capacitance VDS = 25V 775 1080 Reverse Transfer Capacitance f = 1 MHz 285 430 Turn-on Delay Time VGS = 15V 14 28 Crss td(on) tr Rise Time td(off) tf Turn-off Delay Time Fall Time VDD = 0.5 VDSS 14 28 ID = ID [Cont.] @ 25C 60 92 RG = 0.6 14 20 TYP MAX UNIT pF ns SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 Test Conditions / Part Number MIN VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60C 325 Characteristic Safe Operating Area Watts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 0.3 0.05 0.02 0.01 0.001 10-5 t2 Peak TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 40 VGS= 15V, 10V, 8V, 7V & 6.5V 5.5 V 5.0 V 10 4.5 V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5904 Rev C 3-2002 6.0 V 20 0 10 40 VGS=6.5V, 7.0V, 8.0V, 10V & 15V 30 t1 Duty Factor D = t1/t2 SINGLE PULSE 30 6.0 V 5.5 V 20 5.0 V 10 4.5 V 0 UNIT 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 10 TJ = +125C 5 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 20 15 10 5 0 1.30 1.15 NORMALIZED TO V GS VGS=10V 1.10 0.90 0.80 0 10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I D = 0.5 I D V GS [Cont.] = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS=20V 1.00 25 2.0 1.5 1.0 0.5 1.1 1.0 0.9 0.8 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 20,000 100 OPERATION HERE LIMITED BY RDS (ON) 10 1mS 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 10,000 100S Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) D 1.20 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE .1 = 10V @ 0.5 I [Cont.] 5,000 1,000 500 Coss Crss DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 050-5904 Rev C 3-2002 15 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55C BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source Drain 050-5904 Rev C 3-2002 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058