2304NZG-1 - INTEGRATED DEVICE TECHNOLOGY

May, 2012 − Rev. 7

1Publication Order Number:

MJH6284/D

MJH6284(NPN),

MJH6287(PNP)

Darlington Complementary

Silicon Power Transistors

These devices are designed for general−purpose amplifier and

low−speed switching motor control applications.

Features

•Similar to the Popular NPN 2N6284 and the PNP 2N6287

•Rugged RBSOA Characteristics

•Monolithic Construction with Built−in Collector−Emitter Diode

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak

IC20

Adc

Base Current IB0.5 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD160

1.28

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +150 _C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.78 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

160

PD, POWER DISSIPATION (WATTS)

TC, CASE TEMPERATURE (°C)

50 75 125 150 200100 17525

Figure 1. Power Derating

100

140

120

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−93

(TO−218)

CASE 340D

DARLINGTON 20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

100 VOLTS, 160 WATTS

http://onsemi.com

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

MARKING DIAGRAMS

MJH628x

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

AYWWG

MJH628x

MJH628x = Device Code

x = 4 or 7

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

1 BASE

2 COLLECTOR

3 EMITTER

TO−247

TO−218

ORDERING INFORMATION

Device Order Number Package Type Shipping

MJH6284G TO−218

(Pb−Free)

30 Units / Rail

MJH6287G TO−218

(Pb−Free)

30 Units / Rail

MJH6284G TO−247

(Pb−Free)

30 Units / Rail

MJH6287G TO−247

(Pb−Free)

30 Units / Rail

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) VCEO(sus) 100 −Vdc

Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO −1.0 mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEX

−

0.5

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −2.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

(IC = 20 Adc, VCE = 3.0 Vdc)

hFE 750

100

18,000

−

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 40 mAdc)

(IC = 20 Adc, IB = 200 mAdc)

VCE(sat)

−

2.0

3.0

Vdc

Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) −2.8 Vdc

Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) −4.0 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT4.0 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH6284

MJH6287

Cob

−

400

600

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 − −

SWITCHING CHARACTERISTICS

Resistive Load Symbol

Typical

Unit

NPN PNP

Delay Time

VCC = 30 Vdc, IC = 10 Adc

IB1 = IB2 = 100 mA

Duty Cycle = 1.0%

td0.1 0.1 ms

Rise Time tr0.3 0.3

Storage Time ts1.0 1.0

Fall Time tf3.5 2.0

1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

APPROX

+12 V

APPROX

-8.0 V 25 ms

tr, tf, ≤ 10 ns

DUTY CYCLE = 1.0%

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.

TUT

VCC

-30 V

SCOPE

≈ 8.0 k ≈ 50

+4.0 V

51 D1

NPN

MJH6284

PNP

MJH6287

COLLECTOR COLLECTOR

EMITTER EMITTER

BASE BASE

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01 0.03

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1.0 3.0 5.0 10 30 50 100 300 500

RqJC(t) = r(t) RqJC

RqJC = 0.78°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000

0.5

0.3

0.07

0.03

0.01 0.02 2.0 20 2000.3

0.2

0.1

0.05

0.02

0.01

Figure 5. MJH6284, MJH6287

TJ = 150°C

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0

IC, COLLECTOR CURRENT (AMPS)

0.1

5.0 10

0.5

0.2

5.0

1.0

20 100

0.05

0.5 ms

1.0 ms

5.0 ms

0.1 ms

FBSOA, FORWARD BIAS SAFE OPERATING AREA

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

10 20 80

DUTY CYCLE = 10%

30 110100

Figure 6. Maximum RBSOA, Reverse Bias

Safe Operating Area

L = 200 mH

IC/IB ≥ 100

TC = 25°C

VBE(off) = 0-5.0 V

RBE = 47 W

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IB, BASE CURRENT (mA)

200

500

300

1000

2000

3000

NPN PNP

1.0

0.8 2.0 5.0

2.2

1.8

2.6

2.4

3.0 10

2.0

2.8

1.0

1.6

50 100

IC = 15 A

Figure 7. DC Current Gain

0.2 203.01.00.5 5.0 100.3 2.0 7.0

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 3.0 V

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Collector Saturation Region

Figure 9. “On” Voltages

1.2

1.4

300 500 1000200

TJ = 25°C

IC = 10 A

IC = 5.0 A

0.1

IC, COLLECTOR CURRENT (AMPS)

2.0

1.5

V, VOLTAGE (VOLTS)

3.0

2.5

1.0

0.5

0.2 0.5 5.00.3 1.00.7 3.0 30

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

7.02.0 10 20

150

1000

700

500

2000

3000

5000

0.2 3.01.00.5 5.0 100.3 2.0 7.0

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 3.0 V

IC, COLLECTOR CURRENT (AMPS)

300

IB, BASE CURRENT (mA)

1.0

0.8 2.0 5.0

2.2

1.8

2.6

2.4

3.0 10

2.0

2.8

1.0

1.6

50 100

IC = 15 A

1.2

1.4

300 500200

IC = 10 A

IC = 5.0 A

0.1

IC, COLLECTOR CURRENT (AMPS)

2.0

1.5

V, VOLTAGE (VOLTS)

3.0

2.5

1.0

0.5

0.2 0.5 5.00.3 1.00.7 3.0 30

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

7.02.0 10 20

1000

0.7

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TO−247

CASE 340L−02

ISSUE F

0.25 (0.010) MYQS

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MJH6284 (NPN), MJH6287 (PNP)

http://onsemi.com

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MJH6284/D

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