ES2A thru ES2G
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic m a terial has UL flamm ability c lassificatio n 94V-0
MECHANICAL DA T A
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.0 93 grams
SMB
All Dimensio ns in m illime te r
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
3.94 3.3 0
1.9 6 2.21
0.31 0.1 5
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
C
B
A
HEF
GD
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super im posed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 2.0A DC
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C
2.0
50
0.92
5.0
350
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 3)
R
0JL
20
C/W
C
J
Typical Junction Capacitance Note 2)
25
pF
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
@T
L
=110 C
50
35
50
ES2A
200
140
200
ES2D
150
105
150
ES2C
100
70
100
ES2B
Maximum Reverse Recovery Time (Note 1)
T
RR
25
ns
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance juncti on to Lead.
SURFACE M OUNT
SUPER FAST RECTIFIERS
REVERSE VOL TAGE -
50
to
400
Volts
FOR WARD CURRENT -
2.0
Amperes
400
280
400
ES2G
1.25
MAXIMUM RATINGS AND ELECTRICAL CHARA CT ERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSGB01