DMN2004WKQ-7 - DIODES INC - Datasheet.Live

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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August 2016

DMN2004WKQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) max

TC = +25°C

20V

550 mGS = 4.5V

0.54 mA

Description and Applications

This MOSFET is designed to meet the stringent requirements of

Automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

 Engine Management Systems

 DC-DC Converters

 Body Control Electronics

Features and Benefits

 Low On-Resistance: RDS(ON)

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT-323

 

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMN2004WKQ-7

SOT-323

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html ogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

SOT-323

TOP VIEW

G S

NAB = Product Type Marking Code

YM = Date Code Marking

Y  = Year (ex: D = 2016)

M = Month (ex: 9 = September)

NAB

Gate Protection

Diode

Internal Schematic

ESD protected Gate

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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DMN2004WKQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±8

Drain Current (Note 6) Steady

State

TA = +25°C

TA = +85°C

540

390

Pulsed Drain Current (Note 7)

IDM

1.5

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

200

Thermal Resistance, Junction to Ambient

RJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 PCB.

7. Pulse width 10µS, Duty Cycle 1%.

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 10A

Zero Gate Voltage Drain Current

IDSS



A

VDS = 16V, VGS = 0V

Gate-Source Leakage

IGSS



1

A

VGS = 4.5V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

0.5



1.0

VDS = VGS, ID = 250A

Static Drain-Source On-Resistance

RDS (ON)



0.4

0.5

0.7

0.55

0.70

0.9



VGS = 4.5V, ID = 540mA

VGS = 2.5V, ID = 500mA

VGS = 1.8V, ID = 350mA

Forward Transfer Admittance

|Yfs|

200



VDS =10V, ID = 0.2A

Diode Forward Voltage (Note 8)

VSD

0.5



1.4

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS(Note 9)

Input Capacitance

Ciss



150

VDS = 16V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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DMN2004WKQ

01 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

I , DRAIN CURRENT (A)

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 GS

Reverse Drain Current vs. Source-Drain Voltage

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

0.1

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)



I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)



DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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DMN2004WKQ

I , DRAIN CURRENT (A)

Fig. 7 D

On-Resistance vs. Drain Current and Gate Voltage

T, JUNCTION TEMPERATURE ( C)

Fig. 8 j°

Static Drain-Source, On-Resistance vs. Temperature

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)



I , DRAIN-SOURCE LEAKAGE CURRENT (nA)

DSS

I , REVERSE DRAIN CURRENT (A)

1000

I , DRAIN CURRENT (mA)

Fig. 11 Forward Transfer Admittance vs. Drain Current

|Y |, FORWARD TRANSFER ADMITTANCE (S)

V , DRAIN SOURCE VOLTAGE (V)

DSFig. 12 Capacitance Variation

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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DMN2004WKQ

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

E1E

Fe1

SOT323

Dim

Min

Max

Typ

0.00

0.10

0.05

0.90

1.00

0.95

0.25

0.40

0.30

0.10

0.18

0.11

1.80

2.20

2.15

2.00

2.20

2.10

1.15

1.35

1.30

0.650 BSC

1.20

1.40

1.30

0.375

0.475

0.425

0.25

0.40

0.30

0°

8°

All Dimensions in mm

Dimensions

Value

(in mm)

0.650

1.300

0.470

0.600

2.500

Y1 G

DMN2004WKQ

Document number: DS39166 Rev. 1 - 2

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August 2016

DMN2004WKQ

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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