1N5802, 1N5804, 1N5806 Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass construction using an internal "Category 1" metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * JEDEC registered 1N5802, 1N5804, 1N5806 series. Voidless hermetically sealed glass package. Quadruple-layer passivation. Extremely robust construction. Internal "Category 1" metallurgical bonds. JAN, JANTX, JANTXV and JANS qualifications are availble per MIL-PRF-19500/477. RoHS compliant versions available (commercial grade only). "A" Package APPLICATIONS / BENEFITS * * * * * * * Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V. Military, space and other high-reliability applications. Switching power supplies or other applications requiring extremely fast switching & low forward loss. High forward surge current capability. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi MicroNote 050. Also available in: "A" (D-5A) MELF Package (surface mount) 1N5802, 04, 06US & URS MAXIMUM RATINGS @ TA = 25oC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Lead (L = .375 in) see Figure 1 1N5802 Working Peak Reverse Voltage: 1N5804 1N5806 (3) Forward Surge Current Average Rectified Output Current o (1) @ TL = +75 C at 3/8 inch lead length Average Rectified Output-Current o (2) @ TA = +55 C at 3/8 inch lead length Capacitance @ V R = 10 V, f = 1 MHz; Vsig = 50 mV (p-p) (4) Reverse Recovery Time Solder Temperature @ 10 s Symbol Value Unit TJ and TSTG R JL -65 to +175 36 V RWM V I FSM I O1 50 100 150 35 2.5 I O2 1.0 A C 25 pF t rr TSP 25 260 ns o C o C C/W o A A Notes: 1. I O1 is rated at 2.5 A @ T L = 75 oC at 3/8 inch lead length. Derate at 25 mA/oC for T L above 75 oC. 2. I O2 is rated at 1.0 A @ T A = 55 oC for PC boards where thermal resistance from mounting point to o o ambient is sufficiently controlled (R JX < 154 C/W) where T J(max) 175 C is not exceeded. Derate at 8.33 o o C for T above 55 C. mA/ A 3. T A = 25 oC @ I O = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 4. I F = 0.5 A, I RM = 0.5 A, I R(REC) = .05 A. T4-LDS-0211, Rev. 1 (111900) (c)2011 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N5802, 1N5804, 1N5806 MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body coated in blue with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 340 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5802 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial V RWM IO VF IR C t rr JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V BR RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS BREAKDOWN VOLTAGE (MIN.) @ 100 A V (BR) TYPE 1N5802 1N5804 1N5806 Volts 60 110 160 MAXIMUM FORWARD VOLTAGE @ 8.3 ms pulse V FM Volts I F = 1.0 A I F = 2.5 A 0.875 0.975 0.875 0.975 0.875 0.975 REVERSE CURRENT (MAX.) @ V RWM IR SURGE CURRENT (MAX) REVERSE RECOVERY TIME (MAX) I FSM t rr (Note 1) (Note 2) Amps 35 35 35 ns 25 25 25 THERMAL IMPEDANCE @ t H = 10 ms Z JX (Note 3) A 25 oC 1 1 1 125 oC 175 175 175 o C/W 4.0 4.0 4.0 NOTES: 1. T A = 2.5 oC @ I O = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals (I FSM surge is also a maximum rating). 2. I F = 0.5 A, I RM = 0.5 A, I R(REC) = .05 A (t rr reverse recovery time is also a maximum rating). 3. For the complete thermal impedance curve over a broad range of heating times, see Figure 1. T4-LDS-0211, Rev. 1 (111900) (c)2011 Microsemi Corporation Page 2 of 5 1N5802, 1N5804, 1N5806 Theta (oC/W) GRAPHS Heating Time (sec) PO (W) FIGURE 1 Maximum Thermal Impedance I O (A) FIGURE 2 Rectifier Power vs I O (Average Forward Current) T4-LDS-0211, Rev. 1 (111900) (c)2011 Microsemi Corporation Page 3 of 5 1N5802, 1N5804, 1N5806 Thermal Resistance (oC/W) GRAPHS (continued) Pad Area (sq in) FIGURE 3 Thermal Resistance vs FR4 Pad Area At Ambient IF (V) PCB horizontal (for each pad) with 1, 2, and 3 oz copper V F (V) FIGURE 4 Forward Voltage vs Forward Current T4-LDS-0211, Rev. 1 (111900) (c)2011 Microsemi Corporation Page 4 of 5 1N5802, 1N5804, 1N5806 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0211, Rev. 1 (111900) (c)2011 Microsemi Corporation Ltr BD BL LD LL DIMENSIONS INCH MILLIMETERS Min Max Min Max .065 .085 1.65 2.16 .125 .250 3.18 6.35 .027 .032 0.69 0.81 .700 1.30 17.78 33.02 Notes 4 3 3 Page 5 of 5