SIEMENS BFR 93A NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at coliector current from 2mA to 30mA * CECC.type available: CECC 50 002/256 vPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking | Ordering Code Pin Configuration Package BFR93A_ {Res Q62702-F1086 1=B 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEo 12 Vv Collector-emitter voltage Voces 20 Collector-base voltage VoBo 20 Emitter-base voltage Veso 2 Collector current Ic 50 mA Base current le 6 Total power dissipation Prot mw Tg $ 63C 300 Junction temperature 7 150 C Ambient temperature Ta - 65 ... + 150 Storage temperature Tetg - 65 ... + 150 Thermal Resistance Junction - soldering point | Rthus | < 290 K/w 1) Tg is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1322 12.96SIEMENS BFR 93A Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC Characteristics Collector-emitter breakdown voltage ViBRyCEO V lo=1mA, p=0 12 - - Collector-emitter cutoff current IcES WA Voge = 20 V, Vee = 0 - - 100 Collector-base cutoff current IcBo nA Vop = 10V, le =0 - - 100 Emitter-base cutoff current lEBo yA Vep =2V, lo =0 - - 10 DC current gain hee - Io = 30 MA, Voce =8V 50 100 200 Semiconductor Group 1323 12.96SIEMENS BFR 93A Electrical Characteristics at 7, = 25C, unless otherwise specified. Parameter Symbo! Values Unit min. ltyp. | max. AC Characteristics Transition frequency fr GHz Io = 30 mA, Vege = 8 V, f= 500 MHz 4.5 6 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 0.58 0.9 Collector-emitter capacitance Coe Voe = 10 V, f= 1 MHz - 0.23 - Emitter-base capacitance Cab Vep = 0.5 V, f= 1 MHz - 1.7 - Noise figure F dB lg =5 mA, Voe = 8 V, Zg = Zgopt f = 900 MHz - 2 - f= 1.8 GHz - 3.3 - Power gain 2) Gma Io = 30 MA, Voce = 8 V, 2g = Zeopt 2. = ZLopt f = 900 MHz - 13.5 - f= 1.8 GHz - 8.5 - Transducer gain iSoi@l? Io = 30 MA, Vee = 8 V, Zg =2Z,= 50 OD f= 900 MHz - 12 - f= 1.8 GHz - 6.5 - 2) Gina = |So1/Sta! (k-(k2-1)"/) Semiconductor Group 1324 12.96SIEMENS BFR 93A SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS= 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 Vv IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 Vv IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 Q IRB = 0.043806 mA RBM = 3.4649 Q RE = 1.0075 Q RC = 0.13193 Q CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF= 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg |CJC= 1039.5 fF VIC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR= 1.1061 ns CJS = 0 fF VJS = 0.75 Vv MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K Ali parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fir Mobdil-und Satellitenfunktechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.85 nH Cog LBO= 0.51 nH +} | LEI = 0.69 nH Lan Ly B} Transistor |C' = Ley LEO = 0-61 nH o{i-_+_ i Chip = sc LC] = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF EHAQ?222 Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http:/Avww.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 1325 12.96SIEMENS BFR 93A Tota! power dissipation FP, = f(T", Ts) * Package mounted on epoxy 400 mw 300 SN 250 200 \N 150 ~ 100 La LL. L N 50 9 0 20 40 #60 80 100 120 C 150 e Ty Ts Permissible Pulse Load Rinjs = f (i) Hit HHH cu Ht CC a HS Cone Tn YT col CIN mill b= of Til 107 10% 10 10% 10 107 10's 10 Semiconductor Group Permissible Pulse Load Piotmax/Ptotpc = f (fp) 10? 1 | | Crt tH ee nC i ae HCCC Prtmad Pasoe AE A UT es Ni eon \ | . icc ANL 10 10 10 10 107s 10 re 4 1326 12.96SIEMENS BFR 93A Collector-base capacitance C,, = f (Vcp) VBE = be = 0, f= IMHzZ Coy 0 4 8 12 16 Vv 22 Power Gain Gma, Gms = Alc) f=0.9GHz Voge = Parameter 14 Semiconductor Group Transition frequency fy = f (ic) Voge = Parameter 6.0 GHz 5.0 4.5 +S 3.5 3.0 25 2.0 1.5 1.0 05 00 Power Gain Gma, Gms = Alc) f= 1.8GHz Vog = Parameter 1327 12.96SIEMENS BFR 93A Power Gait Gma, Gms = {Vce): 1Sp,!2 = KV oE) er f= Parameter 18 (coma | aB [0.9GHz G [ | | 12 == 0.9GHz! 4 7 4 10 7 / I poems 1 GHZ ary ae | 1 ete mmm 1.8GHz 6 7 -7 [4 4 i atr jo ! | aL 7 G 2 4 6 8 Vv 12 t Vee Power Gain Gma, Gms = {A Voge = Parameter 32 we 00 05 10 #15 20 25 GHz 3.5 i Semiconductor Group intermodulation Intercept Point /P3=/(/c) (3rd order, Output, Zg=Z =50Q) Voge = Parameter, f= 900MHz 32 em 28 IP, | 26 24 20 0 10 20 30 40 mA 60 - kk Power Gain iS2;|2= f(f Vog = Parameter 30 aw wo 4 0. 00 08 #+%10 45 20 25 GHz 35 pf 1328 12.96