NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR Vceo Ic bre @ Ic/ Vee VecE(sat) PACKAGE | DEVICE (sus) (max) min/max @ I-/Ig Cop ft TYPE VOLTS | AMPS @ AIV V@AIA Pp (MHz) PNP 2N6298 60 8.0 750/18000@6/3 2.0@4/.016 300 4.0 TO-66 2N6299 80 8.0 750/18000@6/3 2.0@4/.016 300 4.0 ur) 2N6648 40 10.0 1000/20000@5/3 2.0@5/.01 - 20 2N6649 60 10.0 1000/20000@5/3 | 2.0@5/.01 - 20 2N6650 80 10.0 1000/20000@S/3 | 2.0@5/.01 - 20 NPN TRANSISTOR NPN 2N6300 60 8.0 750/18000@6/3 2.0@4/.016 200 4.0 TO-66 2N6301 80 8.0 750/18000@6/3 2.0@4/.016 200 4.0 < uo 2N6383 40 10.0 1000/20000@5/3 | 2.0@5/.01 200 20 2N6384 60 10.0 1000/20000@5/3 | 2.0@S5/.01 200 20 2N6385 80 10.0 1000/20000@5/3 | 2.0@5/.01 200 20 TO-66 2N6352 80 5.0 2000/10000@5/5 | 1.5@5/.005 40 50 3 PIN 2N6353 150 5.0 1000/10000@5/5 | 1.5@5/.005 40 50 TO-33 2N6350 80 5.0 2000/10000@5/5 | 1.5@5/.005 40 50 " 2N6351 150 5.0 2000/10000@5/5 | 1.5@5/.005 40 50 16