Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-678 To Order Previous Datasheet Index Next Data Sheet Bulletin I2092/B SD553C..S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 560A 6.0 s recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125C Typical Applications Snubber diode for GTO case style DO-200AB (B-PUK) High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD553C..S50L Units 560 A 55 C 1120 A 25 C @ 50Hz 12000 A @ 60Hz 12570 A @ 50Hz 721 KA2s @ 60Hz 658 KA2s 3000 to 4500 V 6.0 s 125 C - 40 to 125 C IF(AV) @ Ths IF(RMS) @ Ths IFSM 2 It VRRM range trr @ TJ TJ D-679 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Code peak reverse voltage V repetitive peak rev. voltage V @ TJ = 125C 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 Type number SD553C..S50L mA 75 Forward Conduction Parameter SD553C..S50L Conditions 560 (210) A 180 conduction, half sine wave 55 (85) C Double side (single side) cooled I F(RMS) Max. RMS forward current 1120 A @ 25C heatsink temperature double side cooled I FSM Max. peak, one-cycle forward, 12000 t = 10ms non-repetitive surge current 12570 t = 8.3ms reapplied t = 10ms 50% VRRM I F(AV) Max. average forward current Units @ Heatsink temperature A 10100 I2 t Maximum I2t for fusing 10570 t = 8.3ms reapplied Sinusoidal half wave, 721 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied 658 KA2s 510 466 I 2 t Maximum I2t for fusing 7210 V F(TO)1 Low level value of threshold KA2s Low level value of forward m High level value of forward (I > x IF(AV)),TJ = TJ max. 0.89 slope resistance V FM t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. 0.98 slope resistance f2 reapplied (I > x IF(AV)),TJ = TJ max. 1.95 voltage r 50% VRRM t = 8.3ms V V F(TO)2 High level value of threshold f1 t = 10ms (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. 1.77 voltage r No voltage Max. forward voltage drop 3.24 V I = 1500A, TJ = 125C, t = 10ms sinusoidal wave pk p Recovery Characteristics Code Typical t S50 Test conditions TJ = 25 oC rr I pk di/dt Max. values @ TJ = 125 C V r t Q rr rr I rr @ 25% IRRM Square Pulse @ 25% IRRM (s) (A) (A/s) (V) (s) (C) (A) 5.0 1000 100 - 50 6.0 900 250 D-680 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled D-683 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 9 - Forward Voltage Drop Characteristics Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics D-684 To Order Fig. 14 - Recovery Current Characteristics Previous Datasheet Index Next Data Sheet SD553C..S50L Series Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency Characteristics D-685 To Order Previous Datasheet Index Next Data Sheet SD553C..S50L Series Thermal and Mechanical Specifications Parameter SD553C..S50L TJ Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, Units C 0.073 DC operation single side cooled K/W junction to heatsink 0.031 F Mounting force, 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Case style Conditions DO-200AB (B-PUK) DC operation double side cooled Conforms to JEDEC RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side 0.009 0.009 Single Side Double Side 0.006 0.006 Conduction angle 180 Units 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 Conditions TJ = TJ max. K/W Ordering Information Table Device Code SD 55 3 C 1 2 3 4 45 S50 5 6 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - t rr code 7 - L = Puk Case DO-200AB (B-PUK) D-681 To Order L 7 Previous Datasheet Index Next Data Sheet SD553C..S50L Series Outline Table BOTH ENDS 58.5 (2.3 0) D IA . M AX . 3.5(0.14) DIA. NOM. x 1.8(0.07) DEEP MIN. Conforms to JEDEC DO-200AB (B-PUK) 34 (1.34) DIA. MAX. All dimensions in millimeters (inches) TWO PLACES 25 .4 (1) 26.9 (1.06) 0.8 (0.03) BOTH ENDS 53 (2.09) DIA. MAX. Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics D-682 To Order