D-679
SD553C..S50L SERIES
FAST RECOVERY DIODES Hockey Puk Version
560A
Bulletin I2092/B
Features
High power FAST recovery diode series
6.0 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AB (B-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
IF(AV) 560 A
@ Ths 55 °C
IF(RMS) 1120 A
@ Ths 25 °C
IFSM @ 50Hz 12000 A
@ 60Hz 12570 A
I2t@ 50Hz 721 KA2s
@ 60Hz 658 KA2s
VRRM range 3000 to 4500 V
trr 6.0 µs
@ TJ125 °C
TJ- 40 to 125 °C
Parameters SD553C..S50L Units
case style DO-200AB (B-PUK)
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SD553C..S50L Series
D-680
Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = 125°C
V V mA
30 3000 3100
36 3600 3700
40 4000 4100
45 4500 4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD553C..S50L 75
Test conditions Max. values @ TJ = 125 °C
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Recovery Characteristics
S50 5.0 1000 100 - 50 6.0 900 250
Typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
TJ = 25 oC
IF(AV) Max. average forward current 560 (210) A180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
IF(RMS) Max. RMS forward current 1120 A@ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle forward, 12000 t = 10ms No voltage
non-repetitive surge current 12570 t = 8.3ms reapplied
10100 t = 10ms50% VRRM
10570 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 721 t = 10ms No voltage Initial TJ = TJ max.
658 t = 8.3ms reapplied
510 t = 10ms 50% VRRM
466 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 7210 KA2√st = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 3.24 VIpk= 1500A, TJ = 125°C, tp = 10ms sinusoidal wave
Parameter SD553C..S50L Units Conditions
Forward Conduction
KA2s
A
V
mΩ
0.89 (I > π x IF(AV)),TJ = TJ max.
0.98 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
1.95 (I > π x IF(AV)),TJ = TJ max.
1.77 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
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SD553C..S50L Series
D-683
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
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SD553C..S50L Series
D-684
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics
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SD553C..S50L Series
D-685
Fig. 18 - Frequency CharacteristicsFig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 20 - Frequency CharacteristicsFig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics
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SD553C..S50L Series
D-681
TJMax. junction operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.073 DC operation single side cooled
junction to heatsink 0.031 DC operation double side cooled
FMounting force, ± 10% 14700 N
(1500) (Kg)
wt Approximate weight 255 g
Case style DO-200AB (B-PUK) Conforms to JEDEC
Parameter SD553C..S50L Units Conditions
Thermal and Mechanical Specifications
°C
K/W
180° 0.009 0.009 0.006 0.006 TJ = TJ max.
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015 K/W
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
Sinusoidal conduction Rectangular conduction
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
1-Diode
2-Essential part number
3-3 = Fast recovery
4-C = Ceramic Puk
5-Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
6-trr code
7-L = Puk Case DO-200AB (B-PUK)
SD 55 3 C45 S50 L
1 2 34 5 6 7
Device Code
Ordering Information Table
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SD553C..S50L Series
D-682
Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
BOTH ENDS
0.8 (0.03) TWO PLACES
3.5(0.14) DIA. NOM. x
1.8(0.07) DEEP MIN.
34 (1.34) DIA. MAX.
58.5 (2.30) DIA. M AX.
26.9 (1.06)
25.4 (1)
BOTH ENDS
53 (2.09) DIA. MAX.
Conforms to JEDEC DO-200AB (B-PUK)
All dimensions in millimeters (inches)
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