BC856S/U_BC857S PNP Silicon AF Transistor Arrays * For AF input stages and driver applications * High current gain * Low collector-emitter saturation voltage * Two (galvanic) internal isolated transistor with good matching in one package * BC856S / U, BC857S: For orientation in reel see package information below * Pb-free (RoHS compliant) package * Qualified according AEC Q101 BC856S/U BC857S C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration BC856S 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BC856U 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC857S 3Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1 Package 2011-07-25 BC856S/U_BC857S Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value - BC856S/U 65 BC857S 45 Collector-base voltage V VCBO BC856S, BC856U 80 BC857S 50 5 Emitter-base voltage VEBO Collector current IC 100 Peak collector current, tp 10 ms ICM 200 Total power dissipation- Ptot 250 TS 118 C, BC856U, BC857U 250 Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS mA - TS 115 C, BC856S Junction temperature Unit 150 C -65 ... 150 Value BC856S, BC857S 140 BC856U 130 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-07-25 BC856S/U_BC857S Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC856S/U 65 - - IC = 10 mA, IB = 0 , BC857S 45 - - IC = 10 A, IE = 0 , BC856S/U 80 - - IC = 10 A, IE = 0 , BC857S 50 - - 5 - - Collector-base breakdown voltage Unit - V(BR)CBO Emitter-base breakdown voltage V(BR)EBO V IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 45 V, IE = 0 - - 0.015 VCB = 45 V, IE = 0 , TA = 150 C - - 5 DC current gain1) - hFE IC = 10 A, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 630 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 Base emitter saturation voltage1) - VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - Base-emitter voltage1) mV VBE(ON) IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 1Pulse test: t < 300s; D < 2% 3 2011-07-25 BC856S/U_BC857S Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 1.5 - pF Ceb - 8 - h11e - 4.5 - k h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - S F - - 10 dB AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k 4 2011-07-25 BC856S/U_BC857S DC current gain hFE = (IC) Collector-emitter saturation voltage VCE = 5 V IC = (VCEsat ), hFE = 20 EHP00382 10 3 h FE 5 EHP00380 10 2 mA C 100 C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 C 0 10 -1 2 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = (TA) IC = (VBEsat), hFE = 20 VCBO = 30 V EHP00379 10 2 mA C EHP00381 10 4 nA CB0 10 10 3 100 C 25 C -50C 1 5 max 10 2 5 5 typ 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C 150 TA 5 2011-07-25 BC856S/U_BC857S Transition frequency fT = (IC) VCE = 5 V Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00378 10 3 12 pF MHz 5 10 CCB(CEB ) fT 10 9 8 7 2 6 5 5 4 CEB 3 2 CCB 1 10 1 10 -1 5 10 0 5 10 1 mA C 0 0 10 2 4 8 12 16 V Total power dissipation P tot = (TS) Total power dissipation P tot = (TS) BC856S, BC857S BC856U 300 300 mW mW 250 250 225 225 200 200 Ptot Ptot 22 VCB(VEB 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 75 90 105 120 C 0 0 150 TS 15 30 45 60 75 90 105 120 C 150 TS 6 2011-07-25 BC856S/U_BC857S Permissible Pulse Load RthJS = (tp) Permissible Pulse Load BC856S; BC857S Ptotmax/PtotDC = (tp ) BC856S, BC857S 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Puls Load RthJS = (t p) Permissible Pulse Load BC856U Ptotmax/PtotDC = (tp ) BC856U 10 3 10 3 2 RthJS 10 Ptotmax / PtotDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 7 2011-07-25 Package SC74 BC856S/U_BC857S Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 0.1 4 10 MAX. 5 2.5 0.1 6 0.25 0.1 0.15 +0.1 -0.06 (0.35) 10 MAX. 2.9 0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 8 2011-07-25 Package SOT363 BC856S/U_BC857S Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 9 2011-07-25 BC856S/U_BC857S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2011-07-25 Material Content Data Sheet Sales Product Name BC 857S H6327 MA# MA000849564 Package PG-SOT363-6-1 Issued Weight* Construction Element Material Group Substances CAS# if applicable chip non noble metal noble metal inorganic material inorganic material non noble metal non noble metal non noble metal non noble metal organic material plastics inorganic material non noble metal noble metal < 10% arsenic gold silicon silicon titanium chromium copper copper carbon black epoxy resin silicondioxide tin silver 7440-38-2 7440-57-5 7440-21-3 7440-21-3 7440-32-6 7440-47-3 7440-50-8 7440-50-8 1333-86-4 60676-86-0 7440-31-5 7440-22-4 leadframe wire encapsulation leadfinish plating *deviation 7. March 2012 Weight [mg] 6.29 mg Average Mass [%] Sum [%] Average Mass [ppm] 0.000 0.00 22 0.014 0.22 2188 0.078 1.25 0.001 0.01 0.003 0.05 458 0.009 0.14 1375 2.869 45.64 45.84 456480 458405 0.010 0.17 0.17 1660 1660 0.030 0.48 0.652 10.37 2.350 37.39 48.24 373861 482401 0.213 3.39 3.39 33925 33925 0.056 0.89 0.89 8943 1.47 12456 2. 3. 4824 103716 Sum in total: 100,00 Infineon Technologies AG provides full material declaration based on information provided by third parties and has taken and continues to take reasonable steps to provide representative and accurate information. Infineon Technologies AG and Infineon Technologies AG suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. All statements are based on our present knowledge, are provided 'as is' and may be subject to change at any time due to technical requirements and development without notification. Company Infineon Technologies AG Address 81726 Munchen Internet www.infineon.com 14666 92 Important Remarks: 1. Sum [ppm] 8943 1000000