Datasheet V2020.A.0 G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Key Characteristics Features * Zero reverse recovery current * Zero forward recovery voltage * Temperature independent switching behavior * High temperature operation * High frequency operation VRRM IF, Tc155 QC 650 V 20 A 82.9 nC Benefits * Unipolar rectifier * Substantially reduced switching losses * No thermal run-away with parallel devices * Reduced heat sink requirements Applications * SMPS, e.g., CCM PFC; * Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking G5S06520AT TO-220AC G5S06520AT G5S06520AT (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 68.8 36 20 V IF IFRM IFSM TC=25 TC=125 TC=155 TC=25, tp=10ms Half Sine WaveD=0.3 TC=25, tp=10ms Half Sine Wave TC=25 TC=110 A A 100 A 210 242 105 W W Tj -55 to 175 Tstg -55 to 175 1 8.8 Nm lbf-in Power Dissipation PTOT Operating Junction Storage Temperature Test Condition M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC G5S06510AT Test Condition Value Typ. Unit 0.62 /W (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions IF=20A, Tj=25 IF=20A, Tj=175 VR=650V, Tj=25 VR=650V, Tj=175 Numerical Typ. Max. 1.3 1.5 1.6 2 1 50 5 100 Unit V A VR=400V, Tj=150 Total Capacitive Charge QC 82.9 - VR=0V, Tj=25, f=1MHZ 1600 2000 VR=200V, Tj=25, f=1MHZ VR=400V, Tj=25, f=1MHZ 165 160 200 180 VR Qc 0 Total Capacitance C C (V )dV nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : G5S06520AT 2) Reverse IV characteristics as a function of Tj : (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G5S06520AT 3) Current Derating: 650V/ 20A Silicon Carbide Power Schottky Barrier Diode 4) Capacitance vs. reverse voltage: Package TO-220AC G5S06520AT (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G5S06520AT (c)2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED