650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Features
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
G5S06520AT ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Key Characteristics
VRRM
650
V
IF, Tc≤155℃
20
A
QC
82.9
nC
Part No.
Package Type
Marking
G5S06520AT
TO-220AC
G5S06520AT
G5S06520AT
Datasheet
V2020.A.0
G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Maximum Ratings
Thermal Characteristics
G5S06510AT ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter
Symbol
Test Condition
Value
Unit
Repetitive Peak Reverse
Voltage
VRRM
650
V
Surge Peak Reverse
Voltage
VRSM
650
V
DC Blocking Voltage
VDC
650
V
Continuous Forward
Current
IF
TC=25℃
TC=125℃
TC=155℃
68.8
36
20
A
Repetitive Peak Forward
Surge Current
IFRM
TC=25℃, tp=10ms ，Half Sine
Wave，D=0.3
100
A
Non-repetitive Peak
Forward Surge Current
IFSM
TC=25℃, tp=10ms ，Half Sine
Wave
210
A
Power Dissipation
PTOT
TC=25℃
242
W
TC=110℃
105
W
Operating Junction
Tj
-55℃to 175℃
℃
Storage Temperature
Tstg
-55℃to 175℃
℃
Mounting Torque
M3 Screw
6-32 Screw
1
8.8
Nm
lbf-in
Parameter
Symbol
Test Condition
Value
Unit
Typ.
Thermal resistance from
junction to case
Rth JC
0.62
℃/W
G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Electrical Characteristics
Performance Graphs
1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj :
G5S06520AT ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter
Symbol
Test Conditions
Numerical
Unit
Typ.
Max.
Forward Voltage
VF
IF=20A, Tj=25℃
1.3
1.5
V
IF=20A, Tj=175℃
1.6
2
Reverse Current
IR
VR=650V, Tj=25℃
1
50
µA
VR=650V, Tj=175℃
5
100
Total Capacitive Charge
QC
VR=400V, Tj=150℃
dVVCQc VR )(
0
82.9
-
nC
Total Capacitance
C
VR=0V, Tj=25℃, f=1MHZ
1600
2000
pF
VR=200V, Tj=25℃, f=1MHZ
165
200
VR=400V, Tj=25℃, f=1MHZ
160
180
G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
3) Current Derating: 4) Capacitance vs. reverse voltage:
Package TO-220AC
G5S06520AT ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
G5S06520AT 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
G5S06520AT ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Note: The levels of RoHS restricted materials in this product are below the maximum concentration
values (also referred to as the threshold limits) permitted for such substances, or are used in an
exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and
other certifications can be obtained from GPT sales representatives or GPT
website: http://globalpowertech.cn/English/index.asp
More product datasheets and company information can be found in:
http://globalpowertech.cn/English/index.asp
