2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750B (Z) 3rd. Edition Mar. 2001 Features * Low on-resistance R DS =45m typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 D 1 1 G S 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current ID 20 A 80 A 20 A 20 A 40 mJ 50 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3150(L),2SK3150(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 45 60 m I D = 10A, VGS = 10VNote4 resistance RDS(on) -- 65 85 m I D = 10A, VGS = 4V Note4 Forward transfer admittance |yfs| 8.5 14 -- S I D = 10A, VDS = 10V Note4 Input capacitance Ciss -- 900 -- pF VDS = 10V Output capacitance Coss -- 400 -- pF VGS = 0 Reverse transfer capacitance Crss -- 210 -- pF f = 1MHz Turn-on delay time t d(on) -- 15 -- ns I D = 10A, VGS = 10V Rise time tr -- 120 -- ns RL = 3 Turn-off delay time t d(off) -- 200 -- ns Fall time tf -- 150 -- ns Body-drain diode forward voltage VDF -- 0.9 -- V I F = 20A, VGS = 0 Body-drain diode reverse recovery time t rr -- 90 -- ns I F = 20A, VGS = 0 diF/ dt =50A/s Note: 4. Pulse test 3 2SK3150(L),2SK3150(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 I D (A) Pch (W) 80 60 100 Drain Current Channel Dissipation 1 10 40 20 3 1 0.3 0 50 100 150 Case Temperature 200 er s s =1 ati on 0m s( (T 1s ho 25 t) Operation in C ) this area is limited by R DS(on) c= 50 100 200 500 V DS (V) Typical Transfer Characteristics 3.5 V Pulse Test ID (A) 10 V 6V 12 3V 8 VGS =2.5 V Drain Current I D (A) Op m s 20 4V Drain Current PW 0 Drain to Source Voltage Tc (C) Typical Output Characteristics 4 DC 0.1 Ta = 25 C 0.05 0.5 1 2 5 10 20 20 16 10 10 30 16 V DS = 10 V Pulse Test 12 8 Tc = 75C -25C 4 25C 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3150(L),2SK3150(S) 2.0 1.5 1.0 I D = 15 A 0.5 10 A 5A 0 Static Drain to Source on State Resistance R DS(on) ( m) Pulse Test 12 4 8 Gate to Source Voltage 200 5,10 A 15 A 100 V GS = 4 V 15 A 50 5,10 A 10 V 0 -40 200 100 0 40 80 120 160 Case Temperature Tc (C) VGS = 4 V 50 10 V 20 10 1 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 150 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 2 10 5 Drain Current 50 20 I D (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 2.5 Drain to Source On State Resistance R DS(on) ( m ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 Tc = -25 C 25 C 10 75 C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK3150(L),2SK3150(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 di / dt = 50 A / s V GS = 0, Ta = 25 C 200 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 10 5 2 500 200 Coss 100 Crss VGS = 0 f = 1 MHz 20 10 1 3 0.3 Reverse Drain Current 0 10 30 50 I DR (A) 120 V DS 12 80 40 0 16 8 V DD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 20 30 40 50 Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 500 Switching Time t (ns) V DD = 100 V 50 V 25 V V GS V GS (V) I D = 15 A 1000 Gate to Source Voltage V DS (V) 160 20 10 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 Drain to Source Voltage Ciss 1000 50 1 0.1 6 2000 t d(off) 200 tf 100 50 tr 20 10 0.1 0.2 t d(on) 2 0.5 1 50 10 Drain Current I D (A) 20 2SK3150(L),2SK3150(S) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current I DR (A) 20 Repetive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 16 12 10 V 5V 8 4 0 V GS = 0, -5 V 0.2 0.4 0.6 Source to Drain Voltage 0.8 1.0 50 I AP = 20 A V DD = 50 V duty < 0.1 % Rg > 50 40 30 20 10 0 25 50 V SD (V) 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3150(L),2SK3150(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3150(L),2SK3150(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SK3150(L),2SK3150(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK3150(L),2SK3150(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SK3150(L),2SK3150(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12