2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-750B (Z)
3rd. Edition
Mar. 2001
Features
Low on-resistance
RDS =45m typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK3150(L),2SK3150(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID20 A
Drain peak current ID(pulse)Note1 80 A
Body-drain diode reverse drain current IDR 20 A
Avalanche current IAP Note3 20 A
Avalanche energy EAR Note3 40 mJ
Channel dissipation Pch Note2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
2SK3150(L),2SK3150(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 100 V ID = 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) —4560mI
D
= 10A, VGS = 10VNote4
resistance RDS(on) —6585mI
D
= 10A, VGS = 4V Note4
Forward transfer admittance |yfs| 8.5 14 S ID = 10A, VDS = 10V Note4
Input capacitance Ciss 900 pF VDS = 10V
Output capacitance Coss 400 pF VGS = 0
Reverse transfer capacitance Crss 210 pF f = 1MHz
Turn-on delay time td(on) 15 ns ID = 10A, VGS = 10V
Rise time tr 120 ns RL = 3
Turn-off delay time td(off) 200 ns
Fall time tf 150 ns
Body–drain diode forward
voltage VDF 0.9 V IF = 20A, VGS = 0
Body–drain diode reverse
recovery time trr 90 ns IF = 20A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
2SK3150(L),2SK3150(S)
4
Main Characteristics
80
60
40
20
050 100 150 200
100
3
10
1
0.1
0.05 1 2 10 20 100
20
16
12
8
4
012345
0246810
Ta = 25 °C
Tc = 75°C
25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
20
16
12
8
4
3.5 V
3 V
V =2.5 V
GS
10 V Pulse Test
6 V
4 V
0.3
500
30
550
200
0.5
500
2SK3150(L),2SK3150(S)
5
110 100
250
500
20
50
10
250
200
150
100
50
–40 0 40 80 120 160
00.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
205
2.5
2.0
1.5
1.0
0.5
048
12 16 20
I = 15 A
D
5 A
10 A
200
100 V = 4 V
GS
10 V
V = 4 V
GS
10 V
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on
)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )m
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature T
c
(°C)
DS(on)
R ( )
Static Drain to Source on State Resistance
m
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
15 A 5,10 A
15 A
5,10 A
2SK3150(L),2SK3150(S)
6
0.1 0.3 1310 30 50 01020304050
2000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
20 40 60 80 100
0
500
50
5
10
2
1
20
200
1000
20
100
10
0.1 0.2 1 210 20
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
10
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 15 A
DVGS
VDS
V = 100 V
50 V
25 V
DD
tf
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
V = 100 V
50 V
25 V
DD
50
500
0.5 50
5000
100
200
2SK3150(L),2SK3150(S)
7
20
16
12
8
4
00.2 0.4 0.6 0.8 1.0
V = 0, –5 V
GS
10 V
5 V
50
40
30
20
10
25 50 75 100 125 150
0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Avalanche WaveformAvalanche Test Circuit
I = 20 A
V = 50 V
duty < 0.1 %
Rg > 50
AP
DD
2SK3150(L),2SK3150(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit Waveform
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK3150(L),2SK3150(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK3150(L),2SK3150(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK3150(L),2SK3150(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK3150(L),2SK3150(S)
12
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