BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV26 BCV46 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCV26 30 - - BCV46 60 - - BCV26 40 - - BCV46 80 - - 10 - - Collector-base breakdown voltage IC = 100 A, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector cutoff current nA ICBO VCB = 30 V, IE = 0 BCV26 - - 100 VCB = 60 V, IE = 0 BCV46 - - 100 Collector cutoff current A ICBO VCB = 30 V, IE = 0 , TA = 150 C BCV26 - - 10 VCB = 60 V, IE = 0 , TA = 150 C BCV46 - - 10 - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V BCV26 4000 - - BCV46 2000 - - BCV26 10000 - - BCV46 4000 - - BCV26 20000 - - BCV46 10000 - - BCV26 4000 - - BCV46 2000 - - DC current gain 1) IC = 10 mA, VCE = 5 V hFE DC current gain 1) IC = 100 mA, VCE = 5 V hFE DC current gain 1) IC = 0.5 A, VCE = 5 V - hFE hFE 1) Pulse test: t 300s, D = 2% 2 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 200 - MHz Ccb - 4.5 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t 300s, D = 2% 3 Jul-13-2001 BCV26, BCV46 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 400 10 CEB0 (CCB0 ) mW BCV 26/46 EHP00291 pF P tot 300 250 CCB0 5 200 CEB0 150 100 50 0 0 15 30 45 60 75 90 105 120 0 10 -1 C 150 TS V 10 1 V EB0 (V CB0 ) 10 0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCV 26/46 EHP00292 Ptot max 5 Ptot DC D= 10 3 BCV 26/46 EHP00294 tp tp T fT MHz T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 10 1 10 2 mA 10 3 C tp 4 Jul-13-2001 BCV26, BCV46 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 1000 IC = f (VCEsat), h FE = 1000 10 3 C BCV 26/46 EHP00295 10 3 mA C 150 C 25 C -50 C 10 2 10 1 10 1 5 5 1.0 150 C 25 C -50 C 10 2 5 0 EHP00296 mA 5 10 0 BCV 26/46 2.0 V 10 0 3.0 0 0.5 1.0 Collector cutoff current ICBO = f (TA) DC current gain hFE = f (I C) VCB = VCEmax VCE = 5V BCV 26/46 1.5 V CEsat V BEsat 10 4 V EHP00297 10 6 nA CBO h FE BCV 26/46 EHP00298 5 max 10 3 10 5 125 C 25 C 5 10 2 -55 C typ 10 4 10 1 10 0 5 0 50 100 C 10 3 10 -1 150 10 0 10 1 10 2 mA 10 3 C TA 5 Jul-13-2001