LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 214
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
v03.0409
General Description
Features
Functional Diagram
Output IP3: +40 dBm
P1dB: +30 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
Typical Applications
This HMC-APH608 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Ampli er which
operates between 22.5 and 26.5 GHz. The HMC-
APH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the ampli er device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Ampli er is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-APH608
Electrical Speci cations[1], TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA [2]
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 22.5 - 26.5 24 - 26.5 GHz
Gain 14.5 17 16 17 dB
Input Return Loss 8 11 dB
Output Return Loss 9 12 dB
Output power for 1dB Compression (P1dB) 27 30 28 30 dBm
Output Third Order Intercept (IP3) 36 39 37 40 dBm
Supply Current (Idd1+Idd2) 950 950 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 215
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Fixtured Pout vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
-20
-16
-12
-8
-4
0
22 23 24 25 26 27
RETURN LOSS (dB)
FREQUENCY (GHz)
28
30
32
34
36
38
40
42
22 23 24 25 26 27
P1dB
IP3 @ 18 dBm/Tone
POUT (dBm), IP3 (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
22 23 24 25 26 27
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22 23 24 25 26 27
GAIN (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 216
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
Thermal Resistance
(Channel to die bottom) 23.9 °C/W
Channel Temperature 180 °C
Storage Temperature -65 °C to +150 °C
Operating Temperature -55 °C to +85 °C
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms.
2RFOUT This pad is AC coupled
and matched to 50 Ohms.
3, 5 Vdd1, Vdd2 Power Supply Voltage for the ampli er. See assembly for
required external components.
4, 6 Vgg1, Vgg2
Gate control for the ampli er. Please follow “MMIC Ampli-
er Biasing Procedure” application note. See assembly for
required external components.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 218
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Assembly Diagram
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 219
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
