~ MOSPOWER Cross Reference List (Cont) SIEMENS (Cont'd) Industry BVpss fDS(on) Siliconix . BVpss 'DS(on) Part No. (Volts) (Ohms), PACKAGE | Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TO-3 oo _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO-220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 _ _ _ BUZ 25 100 Q.10 TO-3 IRF540 100 0.085. BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 BUZ 33. 200 0.75 TO-3 IRF232 200 0.6 BUZ 34 200 0.20 TO-3 IRF240 200 0.18 BUZ 40 500 45 TO-220 IRF822 500 4.0 BUZ 41 500 1.1 TOQ-220 IRF842 500 1.1 BUZ 43 500 45 TO-3 - IRF422 500 40 BUZ 44 500 1.1 TO-3 IRF442 500 1.1 BUZ 45 500 0.6 TO-3 IRF452 500 0.5 BUZ 50 1000 3.5 TO-220 _ _ _ BUZ 53 1000 3.5 TO-3 | _ _ _ BUZ 54 1000 2.0 TO-3 _ _ _ BUZ 80 800 2.6 TO-220 _ _ _ BUZ 83 800 2.6 TO-3 _ _ _ BUZ 84 800 1.3 TO-3 - _ ~ SONY 28J54 210 1.0 TO~220 _ _ _ 28K173 210 1.0 TO-220 IRF232 200V 0.6 SUPERTEX VNO104N1 40 4.0 TO-3 VN67AA 60 3.5 VNO104N2 40 4.0 TO-39 VN67AB 60 3.5 VNO104N3 40 4.0 TO-92 _ _ _ VNO104N4 40 4.0. TO-202 VN46AF 40 3.0 VNO104N5 40 4.0 TO+220 VN46AD 40 3.0 VNO104N6 40 4.0 DIP VQ1004J** 60 3.5 VNO106N1 60 4.0. TO-3 VN67AA 60 3.5 VNO106N2 60 4.0 TO-39 VN67AB 60 3.5 VNO106N3 60 4.0 TO-92 _ _ _ VNO106N4 60 4.0 TO-202 VN67AF 60 3.5 VNO106N5 60 4.0 TO-220 VN67AD 60 3.5 VNO106N6 60 4.0 DIP VQ1004J** 60 3.5 VNO108N1 80 4.0 TO-3 2N6658 90 4.0 VNO108N2 80 4.0 TO-39 2N6661 90 4.0 VN0108N3 80 4.0 TO-92 _ _ _ VNO108N4 80 4.0 TO-202 VN88AF 80 4.0 VNO108N5 80 4.0 TO-220 VN88AD 80 4.0 VNO108N6 80 4.0 DIP VQ1006J** 90 4.5 VNO109N14 90 40 TO-3 2N6653, 90 4.0 VNO109N2 90 4.0 TO-39 2N6661 90 4.0 VN0O109N3 90 4.0 TO-92 _ _ _ VNO109N4 90 40 TO-202 _ _ _ VNO109N5 90 4.0 TO-220 . _ _ VNO109N6 90 4.0 DIP VQ1006J** 90 45. VN0204N1 40 2.0 TO-3 _ _ _ VNO204N2 40 2.0 TO-39 _ _ - VNO204N5 40 2.0 TO-220 _ _ _ VNO204N6 40 2.0 DIP _ _ _ VNO206N1 60 2.0 TO-3 _ _ _- VNO206N2 60 2.0 TO-39 _ _ _ VNO206N5 - 60 2.0 TO-220 _- _ _ VNO206N6 60 2.0 DIP _ - - VNO208N1 80 2.0 TO-3 _ _ _ VNO208N2 80 2.0 TO-39 ~_ _ _ VNO208N5 80 2.0 TO-220 _ _ _ VNO208N6 80 2.0 DIP _ _ _ VNO209N 1 90 2.0 TO-3 _ _ _ VNO209N2 90 2.0 TO-39 _ _ _- VNO209N5 90 2.0 TO-220 _ _ _ VNO209N6 90 2.0 DIP _ _ VNO330N1 300 3.0 TO-3 IRF323 350 2.5 VNO330N2 300 3.0 TO-39 _ - _- **Refer to data sheet for pinout differences Siliconix IST] QOUSIOJOY SSOID UIMOdSOWz-b oS xo MOSPOWER Prime Product Selector Guide * 200C RATING (e; Packages: S {i | i U J u " BVpss Quad | Quad (Volts) TO-3 TO-220 TO-39 10-237 T0-92 TO-202 Side Braze Plastic 450-500 IRF450 IRF840 13A, 0.49 BA, 0.852 IRF440 VN5001 D/IRF830 BA, 0.852 5.5A, 1.52 VNPOO2A * IRF820 6.5A, 1.52 2.5A, 30 VN5001A/IRF430 4.5A, 1.5 350-400 IRF350 IRF740 15A, 0.30 10A, 0.550 IRF340 VN4000D/IRF730 10A, 0.550 5.5A, 1.02 VNMO01A # IRF720 BA, 1.00 3A, 1.80 VN4000A/IRF330 5.5A, 1.02 150-240 tRF250 IRF640 VN2406B VN2406M VN2406L 30A, 0.0852 18A, 0.189 0.8A, 62 0.3A, 62 0.21A, 62 IRF240 IRF630 VN2410M VN2410L 18A, 0.180 9A, 0.42 0.25A, 100 0.16A, 109 IRF230 IRF620 9A, 0.40 5A, 0.80 IRF220 VN2406D 5A, 0.80 1.4A, 62= IRF641 = IRF642 = IRF643 IRF240 = IRF244 = IRF242 = IRF243 IRF240 = IRF241 = IRF242 = IRF243 as IRF640 = IRF644 = IRF642 = IRF643 Siliconix . Ad d Information 200V N-Channel Enhancement-Mode vanee These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. Product Summar FEATURES at y ar = No Second Breakdown Number | BVoss | "osiom | 'o Package a High Input Impedance. IRF240 200 a Internal Drain-Source Diode IRFD41 150 0.180 | 18A u Very Rugged: Excellent SOA InF242 | 200 dL TOs w Extremely Fast Switching TRF DA3 150 o.220" | 16a IRF640 200 0.18 18A BENEFITS IRF641 150 me 70-2208 m Reduced Component Count IRF642 200 0.200 tea u Improved Performance IRF643 150 a Simpler Designs D u Improved Reliability a s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) . Drain-Source Voitage Gate Current (Peak)................-. a1. SA IRF240, 242, 640, 642.............000 ee -200V ; IRF241, 243,641,.643................... 4150V' Gate Source Voltage... eee ee eee +40V : Total Power Dissipation ................. 125W | Drain-Gate Voltage oe : IRF240, 242, 640,642......... ces cece ee 200V Linear Derating Factor .............. 1.0W/C IRF241, 243, 641,643............ 020000 150V Operating and Storage Drain Current Temperature .............--. 55 to +150C Continuous IRF240, 241,640,641................ + 18A Notes: IRF242, 243, 642,643..............0. +16A 1. Limited by package dissipation. Pulsed2.. 0... cece eee eee ees +72A 2. Pulse test 80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS sm 920 (051) 270 . 2%. wae Bre 8 a 0.135 max | MAX { 13.429} ~ 1 4 FF T 0.043 7.092) 0.312 SEATING aos 709057 aN S00 faa] PLANE [ag 197 way pia Stet (4.09 260 0876 (97.145) 1177 (29.896) ve o35 aess (166377 | 0.188 4__AZESN (lec ; [2898 sae fay {Ot a8 a | wa] 0.181 (4.089) \ 0.228 (5.775) a! os25 0.151 (3.838) 100 esa _,| } ert) + Pin 1 Gate 0.205 15-207) sorron view (79.398) BMAX 1 Ge) 500 (14.23) Pin 1 Gate Pin 2 Source ~ "960 (76.51) 1 Pin 2 & TAB Drain CASE Drain 10-3 TO-220 AB Pin 3 Source 2-14 SiliconixELECTRICAL CHARACTERISTICS (Ic =25C unless otherwise noted) . Part Parameter Number Min | Max Unit Test Conditions Static IRF240, 242 200 Drain-Source Breakdown IRF640, 642 BV Vv Vas = 0, lp = 250, PSS Voltage | IRF241, 243 | 50 a8 =0; 1o= 250uA , IRF641, 643 Vestn) Gate Threshold Voltage All 2.0 4.0 Vv Ves= Vos, Ip=1mA less Gate-Body Leakage All +100 | nA Ves = + 20V, Vps=0 0.25 Vps= Rated Vg, Veg = 0 loss Zero Gate Voltage Drain Current All mA pS DS gs - ; 1.0 Vps = Rated Vos, Vag = 0, Te = 125C Ipyon) On-State Drain Current All 18 A Vos = 25V, Vag = 10V (Note 1) IRF240, 241 0.18 Static Drain-Source On-State IRF640, 641 . : osior) Resistance IRF242, 243 0.22 @ | Vas =10V, tp = 10A (Note 1) IRF642, 643 . Dynamic Os Forward Transconductance All 6.0 Ss Vos = 25V, Ip = 10A (Note 1) Ciss Input Capacitance 1600 , Coss Output Capacitance Alt 750 pF Ves = 0, Vos = 25V, f= 1 MHz Cres Reverse Transfer Capacitance 300 . tayon) Turn-On Delay Time All 30 t, Rise Time All 60 ng | Yoo= 75, Ip=10A, RL=7.50, Rg= 4.70 taorn Turn-Off Delay Time All 80 (Fig 1) t Fall Time All 60 Diain-Source Diode Characteristics Typ Vsp Forward On Voltage All -2.0 Vv Is = -18A Ves = 0 (Note 1) ter Reverse Recovery Time All 425 ns Ip =-18A, Vag = 0, di/dt = 100A/us Note: 1. Pulse test: 80 us to 300 us, 1% duty cycle. TEST CIRCUITS FIGURE 1 Switching Test Circuit FIGURE 2 Reverse Recovery Test Circuit Ne 502 difdt ADJUST (1-27 H) tt 0.5 T0'50 uF IN4933 TP ~ ver ADsUST , < | ~ sq j + , 2400 IN4001 4000 ,.F>= 2 $ PE | | ciRcurt. - 4 PULSE UNDER R = 0.259 [@eneraron| LEST L = 0.01 pH P.W.= Tus Cg <50 pF DUTY CYCLE = 1% vi _ nae WAY IN4723 | r 2N4204 AY 1 SCOPE FROM TRIGGER CKT ; Siliconix voidl = 779d! = b79sal = OV9dal evcidl = cycidl = bycddl = Oddi