For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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8 - 32
HMC342LC4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v03.0409
General Description
Features
Functional Diagram
The HMC342LC4 is a GaAs PHEMT MMIC Low
Noise Ampli er housed in a leadless 4x4 mm RoHS
compliant SMT package. Operating from 13 to 25
GHz, the ampli er provides 22 dB of gain and +19
dBm of output IP3 from a single +3V supply. The
low noise gure performance of 3.5 dB is ideal for
receive and transmit pre-driver applications. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use. The HMC342LC4 allows the use of
surface mount manufacturing techniques and requires
no external matching components.
Noise Figure: 3.5 dB
Gain: 22 dB
Single Positive Supply: +3V @ 43 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Electrical Speci cations, TA = +25° C, Vdd = +3V, Idd = 43 mA
Typical Applications
The HMC342LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 13 - 18 18 - 22 22 - 25 GHz
Gain 19 22 17 20 16 19 dB
Gain Variation Over Temperature 0.025 0.035 0.025 0.035 0.025 0.035 dB/ °C
Noise Figure 3.5 4.0 3.5 4.0 3.5 4.5 dB
Input Return Loss 15 15 10 dB
Output Return Loss 15 20 15 dB
Output Power for 1 dB Compression (P1dB) 7 8 9 dBm
Saturated Output Power (Psat) 9 11 11.5 dBm
Output Third Order Intercept (IP3) 16 19 20 dBm
Supply Current (Idd) (Vdd = +3V) 43 43 43 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature Output IP3 vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
8 1012141618202224262830
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
13
16
19
22
25
28
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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Power Compression @ 20 GHz
P1dB vs. Temperature Psat vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 20 GHz
Reverse Isolation vs. Temperature
0
2
4
6
8
10
12
14
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
2.7 3 3.3
Gain
P1dB
Psat
Noise Figure
GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB)
Vdd Supply Voltage (Vdc)
-60
-50
-40
-30
-20
-10
0
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-6
-1
4
9
14
19
24
-26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
12 14 16 18 20 22 24 26
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc) 0 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 3.62 mW/°C above 85 °C) 0.326 W
Thermal Resistance
(channel to ground paddle) 276 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (Vdc) Idd (mA)
+2.7 42
+3.0 43
+3.3 44
Typical Supply Current vs. Vdd
Note: Ampli er will operate over full voltage ranges shown above.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
8 - 36
Pin Number Function Description Interface Schematic
1, 5 - 14,
18 - 20, 22 - 24
N/C No connection required. These pins may be connected to
RF/DC ground without affecting performance.
2, 4, 15, 17 GND Package base has an exposed metal ground that must
also be connected to RF/DC ground.
3RFIN This pin is AC coupled
and matched to 50 Ohms.
16 RFOUT This pin is AC coupled
and matched to 50 Ohms.
21 Vdd Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF, 1000pF, and 2.2 μF are required.
Pin Descriptions
Application Circuit
Component Value
C1 100 pF
C2 1,000 pF
C3 2.2 μF
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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8 - 37
Evaluation PCB
Item Description
J1, J2 2.92 mm PC mount K-connector
J3, J4 DC Pin
C1 100 pF capacitor, 0402 pkg.
C2 1,000 pF Capacitor, 0603 pkg.
C3 2.2μF Capacitor, Tantalum
U1 HMC342LC4 Ampli er
PCB [2] 108535 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 110209 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
