HiAMOSPEC NPN SILICON POWER TRANSISTOR The 2N6569 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica- tions. FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed * Metalg Can Reliability - TO-3 Package * Complement to PNP 2N6594 *All-Purpose Replacement for Industry Standard 2N3055 MAXIMUM RATINGS NPN 2N6569 12 AMPERE NPN SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS Characteristic Symbol 2N6569 Unit Collector-Emitter Voltage Vee 40 Vv Collector-Base Voltage Vego 45 Vv Coilector-Base Voltage Vego 5.0 Vv Collector current - Continuous Ic 12 A ~ Peak lom 24 Base current - Continuous ls 5.0 A Emitter current - Continuous le 17 - Peak lem 34 Total Power Dissipation@T,=25C Py 100 Ww Derate above 25C 0.572 wrc Operating and Storage Junction Ty, Tst Temperature Range - 65 to +200 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 1.75 CANV FIGURE -1 POWER DERATING 100 @ 9 Q E 80 = 70 Eo 5 50 a 40 & 30 o 20 a 10 9 0 23 Ss 7 100 125 150 175 200 To , TEMPERATURE(C) PIN 1.BASE 2.EMITTER COLLECTOR(CASE) DIM MILLIMETERS MIN MAX AC-LanNmMVOD>Y R 8 8 ao sl2N6569 NPN A ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voitage (1) Veo (sus) Vv (i, = 100 mA, I, = 0) 40 Collector Cutoff Current lcEo mA (Veco = 40 V, 1p = 0) 1.0 Collector Cutoff Current lego mA (Vego = 45 V, I = 9) 1.0 Emitter Cutoff Current leno mA (Veg = 5.0V,1,=0) 5.0 ON CHARACTERISTICS(1) DC Current Gain hFE (1, = 4.0A, Veg = 3.0 V) 15 200 (I, = 12 A, Veg = 4.0 V) 5.0 400 Collector-Emitter Saturation Voltage Vee{sat) V (1, =4.0A, 1, =0.4A) 1.5 (lg = 12A, 13 =2.4A) 4.0 Base-Emitter Saturation Voltage Vee(sat) Vv (lp =4.0A,1,=0.4A) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) fy MHz (Ig = 1.0A, Veg = 4.0 V, f = 0.5 MHz ) 1.5 20 SWITCHING CHARACTERISTICS Delay Time Vee = 30 V ty 0.4 us Ip =2.0A Rise Time Ipaq =lpp = O.2A t, 1.5 us t,=25 us Storage Time Duty bycle =2.0% t. 5.0 us Fall Time t; 1.5 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2)f,= |h,, |f fe tesx2N6569 NPN hre , DC CURRENT GAIN V VOLTAGE (VOLTS) ic , COLLECTOR CURRENT (Amp) DC CURRENT GAIN Ty=180 C 05 07 1.6 2.0 3.0 .0 7.0 10 Ic , COLLECTOR CURRENT (AMP) 04 02 63 "ON"VOLTAGES Ty=28C Vee(set) @ leflg=10 Vee@ VcE=4.0V 2 Vegsaty @ lefle=10 0.1 02 03 06 07 1.0 20 30 .0 70 10 iC , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) 30 20 ~* SE NL 1.0ms PhS] SS 05 ms SN ~ ~ TOITT XN N 10 I 5.0ms_ 4 70 de 5.0 ae ~\ 3.0; __. Bonding Wire Limit XQ Second Breakdown Limit 2.0 /- - Thermally Limited at T=28C (Single Pulse) aot | tt 4.0 5.0 7.0 10 20 30 40 50 70 80 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) lc , COLLECTOR CURRENT (uA) COLLECTOR SATURATION REGION T=25C 0 5.0 10 20 50 100 200 $00 1k 2k 5k ts, BASE CURRENT (mA) COLLECTOR CUT-OFF REGION Tye178C le#lces REVERSE 02 0.1 Q 0.1 0.2 0.3 04 05 Vee, BASE-EMITTER VOLTAGE (VOLTS) 04 03 06 There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate [o-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typig=200 C;Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Typg$200C At high case temperatures, thermal limita - tion will reduce the power that can be handled to values iess than the limitations imposed by second breakdown.