2011-08-24
Page 1
BSP295
Rev 2.2
SIPMOS Small-Signal-Transistor Product Summary
VDS 60 V
R
DS(on)
0.3
W
I
D
1.8 A
Feature
·
N-Channel
·
Enhancement mode
·
dv/dtrated PG-SOT223
VPS05163
123
4
Marking
BSP295
Type Package Tape and Reel Information
BSP295 PG-SOT223 L6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
I
D
1.8
1.44
A
Pulsed drain current
TA=25°C
I
D puls
7.2
Reverse diode dv/dt
IS=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C
dv/dt6 kV/µs
Gate source voltage V
GS
±20 V
ESD class (JESD22-A114-HBM) 1B (>500V, <1000V)
Power dissipation
TA=25°C
P
tot
1.8 W
Operating and storage temperature T
j,
T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
•
Pb-free lead plating; RoHS compliant
xQualified according to AEC Q101
PackagingMarking
Non dry
BSP295
Rev 2.2
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point R
thJS
- 15 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA -
-80
48 115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
V(BR)DSS 60 - - V
Gate threshold voltage, VGS = VDS
ID=400µA
VGS(th) 0.8 1.1 1.8
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
IDSS -
--
80.1
50
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS - 1 10 nA
Drain-source on-state resistance
VGS=10V, ID=1.8A
VGS=4.5V, ID=1.8A
RDS(on) -
-0.22
0.39 0.3
0.5
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-08-24
Page 2
BSP295
Rev 2.2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
³
2*ID*RDS(on)max,
ID=1.44A
0.8 1.7 - S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
- 295 368 pF
Output capacitance Coss - 95 118
Reverse transfer capacitance Crss - 45 67
Turn-on delay time td(on) VDD=15V, VGS=4.5V,
ID=1.44 A, RG=15
W
- 5.4 8.1 ns
Rise time tr- 9.9 15
Turn-off delay time td(off) - 27 41
Fall time tf- 19 28
Gate Charge Characteristics
Gate to source charge Qgs VDD=24V, ID=1.8A - 0.9 1.1 nC
Gate to drain charge Qgd - 5.6 8.4
Gate charge total QgVDD=24V, ID=1.8A,
VGS=0 to 10V
- 14 17
Gate plateau voltage V
(plateau)
VDD=24V, ID = 1.8 A - 3.1 3.8 V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - 1.8 A
Inv. diode direct current, pulsed
ISM - - 7.2
Inverse diode forward voltage V
SD
VGS=0, IF = IS- 0.84 1.3 V
Reverse recovery time trr VR=25V, IF=lS,
diF/dt=100A/µs
- 36 45 ns
Reverse recovery charge Qrr - 38 48 nC
2011-08-24
Page 3
BSP295
Rev 2.2
1 Power dissipation
Ptot = f(TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP295
P
tot
2 Drain current
ID=f(TA)
parameter: VGS
³
10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
1.9 BSP295
I
D
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TA = 25 °C
10 010 110 2
VVDS
-2
10
-1
10
0
10
1
10
A
BSP295
I
D
R
DS(on)
=V
DS
/I
D
DC
10 ms
1 ms
tp = 150.0µs
4 Transient thermal impedance
ZthJA = f(tp)
parameter : D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 210 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP295
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-08-24
Page 4
BSP295
Rev 2.2
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj= 25 °C, VGS
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VDS
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
A
3.6
I
D
3V
4.2V
3.8V
3.4V
2.8V
2.4V
5V
6V
7V
10V
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: Tj = 25 °C, VGS
0 0.6 1.2 1.8 2.4 A3.6
ID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
W
1.8
R
DS(on)
2.4V 2.8V
3V 3.4V 3.8V
4.2V
5V
6V
7V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
³
2 x ID x RDS(on)max
parameter: Tj = 25 °C
0 0.5 1 1.5 2 2.5 3 V4
VGS
0
0.5
1
1.5
A
2.5
I
D
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0 0.6 1.2 1.8 2.4 V3.6
ID
0
0.5
1
1.5
S
2.5
g
fs
2011-08-24
Page 5
BSP295
Rev 2.2
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 1.8 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
W
0.75 BSP295
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS;ID = 1 mA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 5 10 15 20 V30
VDS
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
BSP295
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2011-08-24
Page 6
BSP295
Rev 2.2
13 Typ. avalanche energy
EAS = f(Tj)
par.: ID = 3.9 A, VDD = 25 V, RGS = 25
W
20 40 60 80 100 120 °C 160
Tj
0
10
20
30
40
mJ
60
E
AS
14 Typ. gate charge
VGS =f (QG); parameter: VDS ,
ID = 1.8 A pulsed, Tj = 25 °C
0 4 8 12 16 nC 24
QG
0
2
4
6
8
10
12
V
16 BSP295
V
GS
0.2 VDS max
0.5 VDS max
0.8 VDS max
15 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
45
46
47
48
49
50
51
52
53
54
55
56
57
V
60 BSP295
V
(BR)DSS
2011-08-24
Page 7
BSP295
Rev 2.2
2011-08-24
Page 8
