Philips Semiconductors Product specification eee eee ee PNP medium power transistor BCP69 FEATURES PINNING e High current (max. 1 A) PIN DESCRIPTION e Low voltage (max. 20 V). 4 base 2,4 collector APPLICATIONS 3 emitter e General purpose switching and amplification e Power applications such as audio output stages. [| 4 2,4 DESCRIPTION PNP medium power transistor in a SOT223 plastic 1 package. NPN complement: BCP68. U, UUs Top view MAM288 os Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBo collector-base voltage open emitter - ~-32 Vv VcEo collector-emitter voltage open base - ~20 Vv low peak collector current - -2 A Prot total power dissipation Tamb S 25 C - 1.35 Ww hire DC current gain lo = -500 MA; Vog = -1 V 85 375 fr transition frequency Ilo =-10 MA; Vce =~-5 V; f= 100 MHz | 40 - MHz 1997 Mar 12 383Philips Semiconductors Product specification PNP medium power transistor BCP69 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - ~32 Vv Vceo collector-emitter voltage open base ~ -20 Vv VeEBO emitter-base voltage open collector ~ -5 Vv Ic collector current (DC) - -1 A lom peak collector current - -2 A Igm peak base Current - -200 mA Prot total power dissipation Tamb < 25 C; note 1 - 1.35 Ww Tstg storage temperature ~65 +150 C qT; junction temperature ~ 150 C Tasmb operating ambient temperature -65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04". THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Bina thermal resistance from junction to ambient note 1 91 KAW Rin j-s thermal resistance from junction to soldering point 10 K/AW Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04". 1997 Mar 12 389Philips Semiconductors Product specification Fig.2 DC current gain; typical values. PNP medium power transistor BCP69 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Veg = -25 V - - -100 | nA le = 0; Vog = -25 V; T = 150 C - - ~10 [yA lEBo emitter cut-off current Io = 0; Vep=-5 V ~ - ~100 | nA hee DC current gain lo = -5 MA; Voge = -10 V 50 - ~ Io = -500 mA; Veg = ~1 V: see Fig.2 85 375 - lo = ~1 A; Voge = -1 V; see Fig.2 60 - - hee DC current gain Ic = ~500 mA; Veg = ~1 V: see Fig.2 BCP69-10 - - 160 BCP69-16 100 | - 250 BCP69-25 160 |- _ Voesat collector-emitter saturatian voltage | lc = -1 A; lp = -100 mA - - -500 | mV Vee base-emitter voltage Io = -5 MA; Voge = -10 V - -620 |- mv Ic =-1 A; Vee =-1 Vv 7 - -1 Vv Cc. collectcr capacitance le =ig = 0; Vogp = -5 Vi f = 1 MHz 48 - pF fr transition frequency Io = -10 MA; Voce = -5 V; f = 100 MHz | 40 - - MHz Nees DC current gain ratio of the lic! = 0.5 A; Voce] = 1V - - 1.6 Rees complementary pairs _ _ MGRB8<S TT TT TT TT / | La i iti FE \ ! | | t |. f | ~ elt t | T 7 . | t f i! oh | oe LE LE 300 ae tote ane mall | CTT nh | ! a tip i | | 1 : bile. : l I { \ xe ( ' \ 280 |p bp A ao aa | | - | 1 neat fio yf : ; J L | \ J potty : j rorya rt : ey i LEE LT] Pride lly wef PET yi rt TE wy | po Ee ! ete mneae bt} PTH . 1 i | : i Vi | ; thay ' ; | of te bo LEE Pe dl -1071 4 ~10 -10? -103 ig imaj ~104 Voce = -1V. 1997 Mar 12 390