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©
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
FEATURES
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A
RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)
Drain to Source Voltage VDSS –12 V
Gate to Source Voltage VGSS ±8.0 V
Drain Current (DC) ID(DC) ±2.5 A
Drain Current (pulse) ID(pulse) ±5.0*A
Total Power Dissipation PT2.0** W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
*PW ≤ 10 ms, Duty Cycle ≤ 1 %
** Mounted on ceramic board of 7.5 cm2 × 0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Package Drawings (unit : mm)
5.7 ±0.1
2.0 ±0.2
213
1.5 ±0.1
0.4 ±0.05
4.2
0.85 ±0.1
2.1
0.5 ±0.1
1.0
0.55
0.5 ±0.1
3.65 ±0.1
5.4 ±0.25
Equivalent Circuit
Source
Internal Diode
Gate Protect
Diode
Gate
Drain Electrode
Connection
1. Source
2. Drain
3. Gate
Markin
g
: UA3
2SJ462
2
ELECTRICAL SPECIFICATIONS (TA = +25 ˚C)
Parameter Symbol MIN. TYP. MAX. Unit Conditions
Drain Cut-off Current IDSS –10
µ
AVDS = –12 V, VGS = 0
Gate Leakage Current IGSS ±10
µ
AVGS = ±8.0 V, VDS = 0
Gate Cut-off Voltage VGS(off) –0.7 –1.0 –1.3 V VDS = –3.0 V, ID = –1.0 mA
Forward Transfer Admittance |yfs| 1.5 S VDS = –3.0 V, ID = –1.0 A
Drain to Source On-State RDS(on)1 195 290 mΩVGS = –2.5 V, ID = –0.5 A
Resistance
Drain to Source On-State RDS(on)2 135 190 mΩVGS = –4.0, ID = –1.0 A
Resistance
Input Capacitance Ciss 940 pF VDS = –3.0 V, VGS = 0
Output Capacitance Coss 835 pF f = 1.0 MHz
Reverse Transfer Capacitance Crss 495 pF
Turn-On Delay Time td(on) 45 ns VDD = –3.0 V, ID = –1.0 A
Rise Time tr225 ns VGS(on) = –3.0 V, RG = 10 Ω
Turn-Off Delay Time td(off) 140 ns RL = 3.0 Ω
Fall Time tf195 ns
Total Gate Charge QG12 nC VDS = –8 V, ID = –2.5 A
Gate to Source Charge QGS 2nC
VGS = –3.0 V, IG = –2 mA
Gate to Drain Charge QGD 7nC
Diode Forward Voltage VF(S–D) –0.86 V IF = –2.5 A, VGS = 0
Reverse Recovery Time trr 150 ns IF = –2.5 A, VGS = 0
Reverse Recovery Charge Qrr 160 nC di/dt = 50 A/
µ
s
2SJ462
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
–0.001 –0.01 –0.1 –1 –10
RDS(on) - Drain to Source On-State Resistance - Ω
0.2
0
0.1
0.3
0.4
0.5
0.6 VGS = –2.5 V
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
0 –0.5 –1.0 –1.5 –2.0 –2.5
ID - Drain Current - A
–0.0001
–10
–0.001
–0.1
–1
–0.01
TA = 75 ˚C TA = 25 ˚C
TA = –25 ˚C
TA = 125 ˚C
VDS = –3 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
–0.0001 –0.001 –0.01 –0.1 –1
IyfsI - Forward Transfer Admittance - S
0.01
0.1
1
10
25 ˚C 75 ˚C
125 ˚C
TA = –25 ˚C
VDS = –3 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Draint to Source Voltage - V
0 –2 –4 –6 –8 –10
ID - Drain Current - A
0
–1
–2
–3
–4
–5
VGS = –1 V
–2 V
–4 V
–5 V
–3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - ˚C
0 30 60 90 120 150
0
20
dT - Derating Factor - %
40
60
80
100
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
–1 –10 –100
–1
–10
–0.1
Single Pulse
ID - Drain Current - A
DC
PW = 100 ms
10 ms
1 ms
2SJ462
4
SWITCHING CHARACTERISTICS
I
D
- Draint Current - A
–0.1 –1 –10
V
DD
= –3 V
V
GS(on)
= –3 V
Rin = 10 Ω
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
10
100
1000
t
r
t
d(on)
t
f
t
d(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
I
D
- Reverse Drain Current - A
–0.001
–0.01
–0.1
–1
–10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0 –2 –4 –6 –8 –10
R
DS(on)
- Drain to Source On-State Resistance - Ω
0
0.1
0.2
0.3
I
D
= –2.5 A
–1.0 A
–0.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - Ω
–0.001 –0.01 –0.1 –1 –10
0.2
0
0.1
0.3
0.4
0.5
0.6
T
A
= 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
V
GS
= –4 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
–0.1 –1 –10
Ciss,Coss,Crss - Capacitance - pF
1
10
0.1
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
0 8 16 24 32 40
V
DS
- Drain to Source Voltage - V
0
4
8
12
V
GS
- Gate to Source Voltage - V
0
2
4
8
V
DS
V
GS
V
DS
= –8 V
I
D
= –2.5 A
2SJ462
5
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
2SJ462
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
