HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
Broad Bandwidth
Specified from 50 MHz to 20.0 GHz
Usable from 50 MHz to 26.5 GHz
Lower Insertion Loss / Higher Isolation
Fully Monolithic, Glass Encapsulated Chip
Up to +33 dBm CW Power Handling @ +25°C
RoHS* Compliant
Description
The MA4SW410 is a SP4T, series-shunt,
broadband, PIN diode switch made with MACOM’s
patented HMICTM (Heterolithic Microwave
Integrated Circuit) process. This process allows
the silicon pedestals which form the series - shunt
diodes and vias to be embedded into low loss, low
dispersion glass. By incorporating small spacing
between circuit elements, the result is an HMIC
chip with low insertion loss and high isolation at
frequencies up to 26.5 GHz. It is designed to be
used as a moderate power, high performance
switch and provide superior performance when
compared to similar designs that use discrete
components.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via
80/20, gold/tin solder or conductive silver epoxy.
The MA4SW410 is a high performance switch
suitable for use in multi-band ECM, radar, and
instrumentation control circuits where high isolation
to insertion loss ratios are required. With a
standard ±5 V, TTL controlled, PIN diode driver,
50 ns switching speeds are achievable. Ordering Information
Part Number Package
MA4SW410 Gel Pack
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Functional Diagrams
J1
J5J2
J3 J4
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications: TA = 25°C, 20 mA (On-Wafer Measurements)
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss 20 GHz dB — 0.9 1.3
Isolation 20 GHz dB 28 34 —
Input Return Loss 20 GHz dB — 15 —
Output Return Loss 20 GHz dB — 15 —
Switching Speed1 10 GHz ns — 50 —
Absolute Maximum Ratings2,3,4
Parameter Absolute Maximum
RF CW Incident Power +33 dBm
Reverse Voltage -25 V
Bias Current per Port ±50 mA @ +25°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Typical Performance Curves:
Isolation vs. Frequency Insertion Loss vs. Frequency
Input Return Loss vs. Frequency Output Return Loss vs. Frequency
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0 5 10 15 20 25 30
J2
J3
J4
J5
S21 (dB)
Frequency (GHz)
-80
-70
-60
-50
-40
-30
0 5 10 15 20 25 30
J2
J3
J4
J5
S21 (dB)
Frequency (GHz)
-50
-40
-30
-20
-10
0
0 5 10 15 20 25 30
J2
J3
J4
J5
S11 (dB)
Frequency (GHz)
-50
-40
-30
-20
-10
0
0 5 10 15 20 25 30
J2
J3
J4
J5
S22 (dB)
Frequency (GHz)
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
Typical 2 - 18 GHz Bias Network
Typical Driver Connections
Operation of the MA4SW410 PIN Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the isolated
ports as shown below in Fig.1 is required for proper operation of the switch. The backside area of the die is the
RF and DC ground return and the DC return is through the common port J1. A constant current source should be
used to supply the DC control currents. The control voltages at these points will not exceed ±1.5 volts for supply
currents up to ±20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. On all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical
bias network design that will produce >30 dB RF to DC isolation is shown below in Figure 1 .
The optimum insertion loss, P1dB, IP3, and switching speed are attained by using a voltage pull-up resistor in the
DC return path, J1. A minimum value of |-2V| is recommended using a standard, ± 5 V TTL controlled PIN driver
such as MACOM’s MADR-009190-000100.
Compatible MACOM Driver
MADR-009190-000100
100 Ω
39 pF
22 nH
22 pF
39 pF
J1
MA4SW410
22 nH
22 pF
J2
J3J4
J5
DC Bias (±1.2 V typ.)
DC Control Current (mA) RF Output States
J3 J4 J5 J1-J2 J1-J3 J1-J4 J2 J1-J5
+20 +20 +20 low loss Isolation Isolation -20 Isolation
-20 +20 +20 Isolation low loss Isolation +20 Isolation
+20 -20 +20 Isolation Isolation low loss +20 Isolation
+20 +20 +20 -20 Isolation Isolation Isolation low loss
Fig. 1
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
MA4SW410 Chip Dimensions5,6
5. Topside and backside metallization is gold, 2.5 µm thick typical.
6. Yellow areas indicate wire bonding pads.
A
I
J
C
D
E B
F
G
H
All tolerances are ± .0005 inches
DIM Nominal
inches mm
A 0.066 1.67
B 0.047 1.19
C 0.054 1.37
D 0.012 0.31
E 0.043 1.08
F 0.009 0.22
G 0.004 0.11
H 0.004 0.11
I 0.033 0.84
J 0.061 1.56
Thickness 0.005 .120
Bond Pads 0.005 x 0.005 0.120 x 0.120
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
MA4SW410
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Cleanliness
The chips should be handled in a clean environment
free of dust and organic contamination.
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
recommended. A work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
Chip Mounting
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
Eutectic Die Attachment
An 80/20, gold-tin, eutectic solder is recommended.
Adjust the work surface temperature to 255oC and
the tool tip temperature to 265oC. After placing the
chip onto the circuit board re-flow the solder by
applying hot forming gas (95/5 Ni/H) to the top
surface of the chip. Temperature should be
approximately 290oC and not exceed 320oC for
more than 20 seconds. Typically no more than three
seconds is necessary for attachment. Solders rich in
tin should be avoided
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
