CCS050M12CM2 VDS1.2 kV 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FETTM MOSFET and Z-RecTM Diode Features * * * * * * 25 m EOFF (TJ = 150C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBC System Benefits * * * * * RDS(on) (TJ = 25C) Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications * * * * * * Solar Inverters UPS and SMPS Induction Heating Regen Drives 3-Phase PFC Motor Drives Part Number Package Marking CCS050M12CM2 Six-Pack CCS050M12CM2 Maximum Ratings (TC = 25C unless otherwise specified) Symbol Value Unit VDS Drain - Source Voltage 1.2 kV VGS Gate - Source Voltage +25/-10 V ID 2,Rev. B S050M12CM Datasheet: CC Parameter 87 Continuous Drain Current 59 A ID(pulse) Pulsed Drain Current 250 A TJ Junction Temperature 150 C -40 to +125 C TC ,TSTG Case and Storage Temperature Range Test Conditions VGS = 20 V, TC = 25 C VGS = 20 V, TC = 90 C Pulse width tP = 250 s Rate limited by Tjmax,TC = 25C Visol Case Isolation Voltage 2.5 kV DC, t = 1 min LStray Stray Inductance 30 nH Measured from pins 25-26 to 27-28 M Mounting Torque 5.0 N-m G Weight 180 g PD Power Dissipation 312 W TC = 25 C, TJ 150 C Subject to change without notice. www.cree.com Notes Fig. 26 Fig. 28 Fig. 27 1 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. 1.2 kV 2.3 V 1.6 2 On State Resistance Unit Test Conditions VGS, = 0 V, ID = 100 A VDS = 10 V, ID = 2.5 mA VDS = 10 V, ID = 2.5 mA, TJ = 150 C 100 A VDS = 1.2 kV, VGS = 0V 0.5 A VGS = 20 V, VDS = 0V 25 34 43 63 22 m VGS = 20 V, IDS = 50 A VGS = 20 V, IDS = 50 A, TJ = 150 C VDS = 20 V, IDS = 50 A Fig. 4-7 gfs Transconductance Ciss Input Capacitance 2.810 Coss Output Capacitance 0.393 Crss Reverse Transfer Capacitance 0.014 Eon Turn-On Switching Energy 1.1 mJ EOff Turn-Off Switching Energy 0.6 mJ Internal Gate Resistance 1.5 f = 1 MHz, VAC = 25 mV QGS Gate-Source Charge 32 QGD Gate-Drain Charge 30 nC VDD= 800 V, ID= 50 A Fig. 15 QG Total Gate Charge 180 td(on) Turn-on delay time 21 ns tr(on) VSD fall time 90% to 10% 30 ns td(off) Turn-off delay time 50 ns Fig. 20-25 tf(off) VSD rise time 10% to 90% 19 ns VDD = 800V, RLOAD = 8 VGS = +20/-2V, RG = 3.8 TJ = 25 C Note: IEC 60747-8-4 Definitions RG (int) S Note 21 nF VDS = 20 V, ID = 50 A, TJ = 150 C Fig. 8 VDS = 800 V, VGS = 0 V f = 1 MHz, VAC = 25 mV Fig. 16,17 VDD = 600 V, VGS = +20V/-5V ID = 50 A, RG = 20 Load = 200 H TJ = 150 C Note: IEC 60747-8-4 Definitions Fig. 18 Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter VSD Diode Forward Voltage QC Total Capacitive Charge IF Min. Continuous Forward Current Typ. Max. 1.5 1.7 2.0 2.3 Unit V 0.28 C 50 A Test Conditions Note IF = 50 A, VGS = 0 Fig. 9 IF = 50 A, TJ = 150 C VGS = -5 V, Tc = 90 C Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.37 0.40 RthJCD Thermal Resistance Juction-to-Case for Diode 0.42 0.43 Unit C/W Test Conditions Note Tc = 90 C, PD = 150 W Tc = 90 C, PD = 130 W NTC Characteristics Symbol R25 Delta R/R P25 Condition TC = 25 C Typ. Max. 5 TC = 100 C, R100 = 481 k 5 TC = 25 C Unit % mW B25/50 R2 = R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K B25/80 R2 = R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K 2 CCS050M12CM2,Rev. B Typical Performance 200 200 VGS = 20 V Conditions: TJ = -40 C tp < 50 s VGS = 15 V 120 80 VGS = 10 V 40 0 3 6 9 12 120 80 VGS = 10 V 40 VGS = 5 V VGS = 5 V 0 0 15 0 3 6 Drain-Source Voltage, VDS (V) 12 15 Figure 2. Typical Output Characteristics TJ = 25 C 200 2.0 Conditions: TJ = 150 C tp < 50 s Conditions: IDS = 50 A VGS = 20 V tp < 50 s 1.8 VGS = 20 V 160 1.6 VGS = 15 V On Resistance, RDS On (p.u.) Drain Current, IDS (A) 9 Drain-Source Voltage, VDS (V) Figure 1. Typical Output Characteristics TJ = -40 C VGS = 10 V 120 80 40 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VGS = 5 V 0.0 0 0 3 6 9 12 -50 15 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) Drain-Source Voltage, VDS (V) Figure 3. Typical Output Characteristics TJ = 150 C Figure 4. Normalized On-Resistance vs. Temperature 60 100 Conditions: VGS = 20 V tp < 50 s 50 Conditions: IDS = 50 A tp < 50 s 90 80 On Resistance, RDS On (m) TJ = 150 C On Resistance, RDS On (m) VGS = 15 V 160 Drain Current, IDS (A) 160 Drain Current, IDS (A) VGS = 20 V Conditions: TJ = 25 C tp < 50 s TJ = 125 C 40 30 TJ = 25 C TJ = -40 C 20 10 70 TJ = -40 C 60 50 TJ = 150 C 40 TJ = 25 C 30 20 10 0 0 0 25 50 75 100 Drain Source Current, IDS (A) Figure 5. Normalized On-Resistance vs. Drain Current For Various Temperatures 3 CCS050M12CM2,Rev. B 12 13 14 15 16 17 18 19 Gate Source Voltage, VGS (V) Figure 6. Normalized On-Resistance vs. Gate-Source Voltage for Various Temperatures 20 Typical Performance 100 100 Conditions: IDS = 50 A tp < 50 s 90 Drain-Source Current, IDS (A) 80 On Resistance, RDS On (m) VGS = 12 V 70 60 50 VGS = 14 V 40 VGS = 16 V 30 VGS = 18 V 20 VGS = 20 V TJ = 150 C Conditions: tp < 50 s 80 60 TJ = 25 C 40 TJ = -40 C 20 10 0 0 -50 -25 0 25 50 75 100 125 0 150 2 4 Figure 7. On-Resistance vs. Temperature for Various Gate-Source Voltages -3 -2.5 -2 -1.5 -1 6 8 10 12 Gate-Source Voltage, VGS (V) Junction Temperature, TJ (C) -0.5 Figure 8. Transfer Characteristic for Various Junction Temperatures 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = -5 V Drain-Source Current, IDS (A) VGS = 0 V -25 -50 -75 Drain-Source Currnmt, IDS (A) VGS = -2 V -25 -50 -75 Conditions: TJ = -40 C tp < 50 s VGS = -2 V VGS = -5 V -100 Drain-Source Voltage, VDS (V) Figure 10. Diode Characteristic at 25 C Figure 9. Diode Characteristic at -40 C -2.5 -2 -1.5 -1 VGS = 0 V -100 Drain-Source Voltage, VDS (V) -3 Conditions: TJ = 25 C tp < 50 s -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = 0 V VGS = 10 V -25 -50 VGS = 0 V VGS = -5 V -75 -25 VGS = 20 V VGS = 15 V -50 -75 Conditions: TJ = -40 C tp < 50 s Conditions: TJ = 150 C tp < 50 s VGS = -2 V -100 Drain-Source Voltage, VDS (V) Figure 11. Diode Characteristic at 150 C 4 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 5 V CCS050M12CM2,Rev. B -100 Drain-Source Voltage, VDS (V) Figure 12. 3rd Quadrant Characteristic at -40 C Typical Performance -3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0 VGS = 0 V VGS = 0 V -25 VGS = 10 V VGS = 15 V -50 VGS = 20 V -75 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 5 V -25 VGS = 5 V VGS = 10 V -50 VGS = 15 V -75 Conditions: TJ = 25 C tp < 50 s Conditions: TJ = 150 C tp < 50 s VGS = 20 V -100 -100 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 14. 3rd Quadrant Characteristic at 150 C Figure 13. 3rd Quadrant Characteristic at 25 C 10000 Conditions: VDS = 800 V IDS = 50 A IGS = 10 mA 15 CISS 1000 COSS Capacitance (pF) Gate-Source Voltage, VGS (V) 20 10 5 100 CRSS 10 0 Conditions: f = 1 MHz VAC = 25 mV -5 1 0 30 60 90 120 150 180 0 50 Gate Charge (nC) 200 250 Figure 16. Typical Capacitances vs. Drain-Source Voltage (0 - 250 V) 10000 3.0 Conditions: VDD = 600 V TJ = 150 C L = 200 H RG = 20 Ohms VGS = +20V/-5V CISS 2.5 1000 Switching Loss (mJ) COSS Capacitance (pF) 150 Drain-Source Voltage, VDS (V) Figure 15. Typical Gate Charge Characteristics 100 CRSS 10 Conditions: f = 1 MHz VAC = 25 mV Eon 2.0 Eoff 1.5 1.0 0.5 1 0.0 0 250 500 750 Drain-Source Voltage, VDS (V) Figure 17. Typical Capacitances vs. Drain-Source Voltage (0 - 1 kV) 5 100 CCS050M12CM2,Rev. B 1000 0 25 50 75 100 Drain to Source Current, IDS (A) Figure 18. Inductive Switching Energy vs. Drain Current For VDS = 600V, RG = 20 125 Typical Performance 4.5 100 Conditions: VDD = 800 V TJ = 150 C L = 200 H RG = 20 Ohms VGS = +20V/-5V Switching Loss (mJ) 3.5 ton Eon Time, ton, tr, td(on) (ns) 4.0 3.0 Eoff 2.5 2.0 1.5 td(on) tr Conditions: VGS: +20/-5V RG = 20 Ohms VDD = 800 V TJ = 25 C 1.0 0.5 10 0.0 0 25 50 75 100 1 125 10 Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 800 V, RG = 20 Figure 20. Turn-on Timing vs. Drain Current 10000 1000 Time, ton, tr, td(on) (ns) Time, toff, tf, td(off (ns) Conditions: VGS: +20/-5V RLoad = 16 Ohms VDD = 800 V TJ = 25 C 1000 toff td(off) 100 tr ton 10 10 1 1 10 100 10 100 Drain-Source Current, IDS (A) Gate Resistance, RG (Ohms) Figure 21. Turn-off Timing vs. Drain Current Figure 22. Turn-on Timing vs. External Gate Resistor 10000 100 Conditions: VGS: +20/-5V RLoad = 16 Ohms VDD = 800 V TJ = 25 C ton toff td(off) 100 Time, ton, tr, td(on) (ns) 1000 Time, toff, tf, td(off (ns) td(on) 100 tf Conditions: VGS: +20/-5V RG = 20 Ohms VDD = 800 V TJ = 25 C tr tr td(on) 10 Conditions: VGS: +20/-5V RG = 20 Ohms VDD = 800 V RLoad = 16 Ohms 1 10 10 100 Gate Resistance, RG (Ohms) Figure 23. Turn-off Timing vs. External Gate Resistor 6 100 Drain-Source Current, IDS (A) Drain to Source Current, IDS (A) CCS050M12CM2,Rev. B 0 20 40 60 80 100 120 140 Junction Temperature, TJ (C) Figure 24. Turn-on Timing vs. Junction Temperature 160 Typical Performance 100 Drain-Source Continous Current, IDS (DC) (A) Time, toff, tf, td(off (ns) 1000 toff td(off) 100 tf Conditions: VGS: +20/-5V RG = 20 Ohms VDD = 800 V RLoad = 16 Ohms 80 70 60 50 40 30 20 10 0 10 0 20 Conditions: TJ 150 C 90 40 60 80 100 120 140 -40 160 -20 0 20 Junction Temperature, TJ (C) Figure 25. Turn-on Timing vs. Junction Temperature Conditions: TJ 150 C 120 140 160 1 s 10 s 250 200 150 100 Limited by RDS On 10.00 100 ms 1.00 Conditions: TC = 25 C D = 0, Parameter: tp 0.10 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 Case Temperature, TC (C) 100 1000 Figure 28. MOSFET Safe Operating Area 1 Diode Junction-Case Thermal Response, Zth JC (C/W) 1 D = 90% D = 70% D = 50% D = 30% D = 10% D = 5% 0.01 10 Drain-Source Voltage, VDS (V) Figure 27. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature 0.1 100 s 1 ms 50 MOSFET Junction-Case Thermal Response, Zth JC (C/W) 100 100.00 300 0 D = 2% D = 1% D = 0.5% tp D = 0.2% D = tp / T D = 90% D = 70% D = 50% D = 30% 0.1 D = 10% D = 5% 0.01 D = 2% D = 1% D = 0.5% D = 0.2% tp D = tp / T Single Pulse 0.001 T Single Pulse 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 Figure 29. MOSFET Junction to Case Thermal Impedance CCS050M12CM2,Rev. B T 0.001 Time (s) 7 80 Figure 26. Continous Drain Current Derating vs Case Temperature Drain-Source Current, IDS (A) Maximum Dissipated Power, Ptot (W) 350 60 40 Case Temperature, TC (C) 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 Time (s) Figure 30. Diode Junction to Case Thermal Impedance Typical Performance NTC Resistance (Ohms) 100000 10000 1000 100 10 -50 -25 0 25 50 75 100 125 150 NTC Temperature (C) Figure 31. NTC Resistance vs NTC tTemperature Figure 31. Resistive Switching Time Description Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] 8 CCS050M12CM2,Rev. B Package Dimensions (mm) This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright (c) 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 9 CCS050M12CM2,Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CCS050M12CM2