1
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CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
Datasheet: CCS050M12CM2,Rev. B
Features
• UltraLowLoss
• ZeroReverseRecoveryCurrent
• ZeroTurn-offTailCurrent
• High-FrequencyOperation
• PositiveTemperatureCoefcientonVFandVDS(on)
• CuBaseplate,AlNDBC
System Benets
• EnablesCompactandLightweightSystems
• HighEfciencyOperation
• EaseofTransistorGateControl
• ReducedCoolingRequirements
• ReducedSystemCost
Applications
• SolarInverters
• UPSandSMPS
• InductionHeating
• RegenDrives
• 3-PhasePFC
• MotorDrives

Package
 
Maximum Ratings (TC = 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Notes
VDS Drain-SourceVoltage 1.2 kV
VGS Gate-SourceVoltage +25/-10 V
IDContinuousDrainCurrent 87 AVGS=20V,TC=25˚C Fig.26
59 VGS=20V,TC=90˚C
ID(pulse) PulsedDrainCurrent 250 A PulsewidthtP=250μs
RatelimitedbyTjmax,TC=25˚C Fig.28
TJJunctionTemperature 150 ˚C
TC,TSTG CaseandStorageTemperatureRange -40to+125 ˚C
Visol CaseIsolationVoltage 2.5 kV DC,t=1min
LStray StrayInductance 30 nH Measuredfrompins25-26to27-28
M MountingTorque 5.0 N-m
G Weight 180 g
PDPowerDissipation 312 W TC=25˚C,TJ≤150˚C Fig.27
Part Number Package Marking
CCS050M12CM2 Six-Pack CCS050M12CM2
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF
(TJ = 150˚C) 0.6 mJ
2CCS050M12CM2,Rev. B
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-SourceBreakdownVoltage 1.2 kV VGS,=0V,ID=100µA
VGS(th) GateThresholdVoltage 2.3 VVDS=10V,ID=2.5mA
1.6 VDS=10V,ID=2.5mA,TJ=150˚C
IDSS ZeroGateVoltageDrainCurrent 2100 μA VDS=1.2kV,VGS=0V
IGSS Gate-SourceLeakageCurrent 0.5 μA VGS=20V,VDS=0V
RDS(on) OnStateResistance 25 34 mΩ VGS=20V,IDS=50A Fig.
4-7
43 63 VGS=20V,IDS=50A,TJ=150˚C
gfs Transconductance 22 SVDS=20V,IDS=50A Fig.8
21 VDS=20V,ID=50A,TJ=150˚C
Ciss InputCapacitance 2.810
nF VDS=800V,VGS=0V
f=1MHz,VAC=25mV
Fig.
16,17
Coss OutputCapacitance 0.393
Crss ReverseTransferCapacitance 0.014
Eon Turn-OnSwitchingEnergy
 1.1 mJ VDD=600V,VGS=+20V/-5V
ID=50A,RG=20Ω
Load=200μHTJ=150˚C
Note:IEC60747-8-4Denitions
Fig.18
EOff Turn-OffSwitchingEnergy
 0.6 mJ
RG(int) InternalGateResistance 1.5 Ω f=1MHz,VAC=25mV
QGS Gate-SourceCharge 32
nC VDD=800V,ID=50A Fig.15
QGD Gate-DrainCharge 30
QGTotalGateCharge 180
td(on) Turn-ondelaytime 21 ns VDD=800V,RLOAD=8Ω
VGS=+20/-2V,RG=3.8Ω
TJ=25˚C
Note:IEC60747-8-4Denitions
Fig.
20-25
tr(on) VSDfalltime90%to10% 30 ns
td(off) Turn-offdelaytime 50 ns
tf(off) VSDrisetime10%to90% 19 ns
Free-Wheeling SiC Schottky Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD DiodeForwardVoltage 1.5 1.7 VIF=50A,VGS=0 Fig.9
2.0 2.3 IF=50A,TJ=150˚C
QCTotalCapacitiveCharge 0.28 μC
IFContinuousForwardCurrent 50 A VGS=-5V,Tc=90˚C
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.37 0.40 ˚C/W Tc=90˚C,PD=150W
RthJCD ThermalResistanceJuction-to-CaseforDiode 0.42 0.43 Tc=90˚C,PD=130W
NTC Characteristics
Symbol Condition Typ. Max. Unit
R25 TC=25°C 5kΩ
DeltaR/R TC=100°C,R100=481Ω ±5 %
P25 TC=25°C mW
B25/50 R2=R25exp[B25/50(1/T2-1/(298.15K))] 3380 K
B25/80 R2=R25exp[B25/80(1/T2-1/(298.15K))] 3440 K
3CCS050M12CM2,Rev. B
Typical Performance
0
40
80
120
160
200
036912 15
Drain Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 5 V
Conditions:
TJ= -40 °C
tp< 50 µs
0
40
80
120
160
200
0 3 6 9 12 15
Drain Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 5 V
Conditions:
TJ= 25 °C
tp< 50 µs
Figure2.TypicalOutputCharacteristicsTJ=25˚C
Figure1.TypicalOutputCharacteristicsTJ=-40˚C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 025 50 75 100 125 150
Junction Temperature, TJ(°C)
Conditions:
IDS = 50 A
VGS = 20 V
tp< 50 µs
0
40
80
120
160
200
0 3 6 9 12 15
Drain Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 5 V
Conditions:
TJ= 150 °C
tp< 50 µs
Figure5.
NormalizedOn-Resistancevs.DrainCurrent
ForVariousTemperatures
Figure4.NormalizedOn-Resistancevs.Temperature
0
10
20
30
40
50
60
025 50 75 100
On Resistance, RDS On (mΩ)
Drain Source Current, IDS (A)
Conditions:
VGS = 20 V
tp< 50 µs
TJ= 150 °C
TJ= 25 °C
TJ= -40 °C
TJ= 125 °C
0
10
20
30
40
50
60
70
80
90
100
12 13 14 15 16 17 18 19 20
Gate Source Voltage, VGS (V)
Conditions:
IDS = 50 A
tp< 50 µs
TJ= 150 °C
TJ= 25 °C
TJ= -40 °C
Figure6.NormalizedOn-Resistancevs.Gate-Source
VoltageforVariousTemperatures
Figure3.TypicalOutputCharacteristicsTJ=150˚C
4CCS050M12CM2,Rev. B
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
TJ= -40 °C
tp < 50 µs
V
GS = -5 V
VGS = -2 V
VGS = 0 V
Typical Performance
0
10
20
30
40
50
60
70
80
90
100
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(mΩ)
Junction Temperature, T
J
(°C)
Conditions:
IDS = 50 A
tp< 50 µs
V
GS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
0
20
40
60
80
100
0246810 12
Drain-Source Current, IDS (A)
Gate-Source Voltage, VGS (V)
Conditions:
t
p
< 50 µs
T
J
= 25 °C
T
J
= -40 °C
T
J
= 150 °C
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 25 °C
tp < 50 µs
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Figure8.TransferCharacteristicforVarious
JunctionTemperatures
Figure10.
DiodeCharacteristicat25˚C
Figure9.DiodeCharacteristicat-40˚C
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
Conditions:
TJ= 150 °C
tp < 50 µs
VGS = -5 V
VGS = -2 V
VGS = 0 V
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
TJ= -40 °C
tp < 50 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 0 V
V
GS
= 15 V
V
GS
= 20 V
Figure12.3rdQuadrantCharacteristicat-40
˚
C
Figure7.On-Resistancevs.Temperature
forVariousGate-SourceVoltages
Figure11.
DiodeCharacteristicat150˚C
5CCS050M12CM2,Rev. B
-5
0
5
10
15
20
030 60 90 120 150 180
Gate-Source Voltage, V
GS
(V)
Gate Charge (nC)
Conditions:
VDS = 800 V
IDS = 50 A
IGS = 10 mA
Typical Performance
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
TJ= 25 °C
tp < 50 µs
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
-100
-75
-50
-25
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
TJ= 150 °C
tp < 50 µs
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 0 V
V
GS
= 15 V
V
GS
= 20 V
Figure14.
3rdQuadrantCharacteristicat150
˚
C
1
10
100
1000
10000
050 100 150 200 250
Drain-Source Voltage, V
DS
(V)
Conditions:
f = 1 MHz
V
AC
= 25 mV
C
ISS
C
OSS
C
RSS
Figure13.
3rdQuadrantCharacteristicat25
˚
C
1
10
100
1000
10000
0250 500 750 1000
Capacitance (pF)
Drain-Source Voltage, VDS (V)
Conditions:
f = 1 MHz
VAC = 25 mV
CISS
COSS
CRSS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
025 50 75 100 125
Switching Loss (mJ)
Drain to Source Current, IDS (A)
Conditions:
VDD = 600 V
TJ= 150 °C
L = 200 µH
RG= 20 Ohms
VGS = +20V/-5V
Eon
Eoff
Figure18.
InductiveSwitchingEnergyvs.
DrainCurrentForVDS=600V,RG=20Ω
Figure15.TypicalGateChargeCharacteristics Figure16.TypicalCapacitancesvs.Drain-Source
Voltage(0-250V)
Figure17.
TypicalCapacitancesvs.Drain-Source
Voltage(0-1kV)
6CCS050M12CM2,Rev. B
Typical Performance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
025 50 75 100 125
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
Conditions:
V
DD = 800 V
TJ= 150 °C
L = 200 µH
RG= 20 Ohms
VGS = +20V/-5V
Eon
Eoff
Figure19.InductiveSwitchingEnergyvs.
DrainCurrentForVDS=800V,RG=20Ω Figure20.Turn-onTimingvs.DrainCurrent
10
100
1000
10000
110 100
Time, toff, tf, td(off (ns)
Drain-Source Current, IDS (A)
Conditions:
V
GS
:+20/-5V
R
G
= 20 Ohms
V
DD
= 800 V
T
J
= 25 °C
t
off
t
f
t
d(off)
10
100
110 100
Time, ton, tr, td(on) (ns)
Drain-Source Current, IDS (A)
Conditions:
V
GS
:+20/-5V
R
G
= 20 Ohms
V
DD
= 800 V
T
J
= 25 °C
t
on
t
r
t
d(on)
1
10
100
1000
10 100
Time, ton, tr, td(on) (ns)
Gate Resistance, RG(Ohms)
Conditions:
V
GS
:+20/-5V
R
Load
= 16 Ohms
V
DD
= 800 V
T
J
= 25 °C
t
on
t
r
t
d(on)
Figure22.Turn-onTimingvs.ExternalGateResistorFigure21.Turn-offTimingvs.DrainCurrent
1
10
100
1000
10000
10 100
Time, toff, tf, td(off (ns)
Gate Resistance, RG(Ohms)
Conditions:
V
GS
:+20/-5V
R
Load
= 16 Ohms
V
DD
= 800 V
T
J
= 25 °C
t
off
t
r
t
d(off)
Figure23.Turn-offTimingvs.ExternalGateResistor
10
100
020 40 60 80 100 120 140 160
Time, ton, tr, td(on) (ns)
Junction Temperature, TJ(°C)
Conditions:
V
GS
:+20/-5V
R
G
= 20 Ohms
V
DD
= 800 V
R
Load
= 16 Ohms
t
on
t
r
t
d(on)
Figure24.Turn-onTimingvs.JunctionTemperature
7CCS050M12CM2,Rev. B
Typical Performance
Figure25.Turn-onTimingvs.JunctionTemperature Figure26.ContinousDrainCurrentDeratingvsCase
Temperature
0
50
100
150
200
250
300
350
-40 -20 020 40 60 80 100 120 140 160
Maximum Dissipated Power, Ptot (W)
Case Temperature, TC(°C)
Conditions:
TJ≤ 150 °C
0
10
20
30
40
50
60
70
80
90
100
-40 -20 020 40 60 80 100 120 140 160
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
0.10
1.00
10.00
100.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
1 µs
Figure28.MOSFETSafeOperatingArea
Figure27.MaximumPowerDissipation(MOSFET)Derat-
ingvsCaseTemperature
0.001
0.01
0.1
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
MOSFET Junction-Case Thermal Response, Zth
JC
(°C/W)
Time (s)
D = t
p
/ T
t
p
T
D = 90%
D = 70%
D = 50%
D = 30%
D = 5%
D = 10%
D = 1%
D = 2%
D = 0.5%
D = 0.2%
Single Pulse
Figure29.MOSFETJunctiontoCaseThermalImpedance
0.001
0.01
0.1
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Diode Junction-Case Thermal Response, Zth
JC
(°C/W)
Time (s)
D = t
p
/ T
t
p
T
D = 90%
D = 70%
D = 50%
D = 30%
D = 5%
D = 10%
D = 1%
D = 2%
D = 0.5%
D = 0.2%
Single Pulse
Figure30.DiodeJunctiontoCaseThermalImpedance
10
100
1000
020 40 60 80 100 120 140 160
Time, toff, tf, td(off (ns)
Junction Temperature, TJ(°C)
Conditions:
V
GS
:+20/-5V
R
G
= 20 Ohms
V
DD
= 800 V
R
Load
= 16 Ohms
t
off
t
f
t
d(off)
8CCS050M12CM2,Rev. B
Typical Performance
Figure31.NTCResistancevsNTCtTemperature Figure31.ResistiveSwitchingTimeDescription
10
100
1000
10000
100000
-50 -25 025 50 75 100 125 150
NTC Resistance (Ohms)
NTC Temperature (°C)
Module Application Note:TheSiCMOSFETmoduleswitchesatspeedsbeyondwhatiscustomarilyassociatedwithIGBTbased
modules.Therefore,specialprecautionsarerequiredtorealizethebestperformance.Theinterconnectionbetweenthegate
driverandmodulehousingneedstobeasshortaspossible.Thiswillaffordthebestswitchingtimeandavoidthepotentialfor
deviceoscillation.Also,greatcareisrequiredtoinsureminimuminductancebetweenthemoduleandlinkcapacitorstoavoid
excessiveVDSovershoots.
PleaseRefertoapplicationnote:DesignConsiderationswhenusingCreeSiCModulesPart1andPart2.
[CPWR-AN12,CPWR-AN13]
99 CCS050M12CM2,Rev. B
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
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Package Dimensions (mm)
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CCS050M12CM2