3SK229 GaAs Dual Gate MES FET UHF TV Tuner RF Amplifier Table 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit --------------------------------------------- Drain to source voltage VDS 12 V --------------------------------------------- Gate 1 to source voltage VG1S -6 V --------------------------------------------- Gate 2 to source voltage VG2S -6 V --------------------------------------------- Drain current ID 50 mA --------------------------------------------- Channel power dissipation Pch 150 mW --------------------------------------------- Channel temperature Tch 125 C --------------------------------------------- Storage temperature Tstg -55 to +125 C --------------------------------------------- MPAK-4 2 3 1 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain Table 2 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition ----------------------------------------------------------------------------------------------- Drain to source cutoff current IDSX -- -- 50 A VDS = 12 V, VG1S = -4 V, VG2S = 0 ----------------------------------------------------------------------------------------------- Gate 1 to source breakdown voltage V(BR)G1SS -6 -- -- V IG1 = -10 A, VG2S = VDS = 0 ----------------------------------------------------------------------------------------------- Gate 2 to source breakdown voltage V(BR)G2SS -6 -- -- V IG2 = -10 A, VG1S = VDS = 0 ----------------------------------------------------------------------------------------------- Gate 1 cutoff current IG1SS -- -- -5 A VG1S = -5 V, VG2S = VDS = 0 ----------------------------------------------------------------------------------------------- Gate 2 cutoff current IG2SS -- -- -5 A VG2S = -5 V, VG1S = VDS = 0 ----------------------------------------------------------------------------------------------- Drain current IDSS 15 25 40 mA VDS = 5 V, VG1S = VG2S = 0 ----------------------------------------------------------------------------------------------- Gate 1 to source cutoff voltage VG1S(off) -- -1.3 -3.5 V VDS = 5 V, VG2S = 0, ID = 100 A ----------------------------------------------------------------------------------------------- Gate 2 to source cutoff voltage VG2S(off) -- -1.3 -3.5 V VDS = 5 V, VG1S = 0, ID = 100 A ----------------------------------------------------------------------------------------------- 3SK229 3SK229 Table 2 Electrical Characteristics (Ta = 25C) (cont) Item Symbol Min Typ Max Unit Test condition ----------------------------------------------------------------------------------------------- Forward transfer admittance |yfs| 20 34 -- mS VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 kHz ----------------------------------------------------------------------------------------------- Input capacitance Ciss -- 0.56 1.0 pF VDS = 5 V, ----------------------------------------------------------------------- VG1S = VG2S = -4 V, Output capacitance Coss -- 0.36 0.6 pF f = 1 MHz ----------------------------------------------------------------------- Reverse transfer capacitance Crss -- 0.027 0.05 pF ----------------------------------------------------------------------------------------------- Power gain PG 17 20 -- dB VDS = 5 V, VG2S = 1 V, ----------------------------------------------------------------------- ID = 10 mA, f = 900 MHz Noise figure NF -- 1.3 2.0 dB ----------------------------------------------------------------------------------------------- * Marking is "XS-". * See characteristic curve of 3SK228. 2