Rev. A4, December 2000
FQP13N10L
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2000 Fairchild Semiconductor International
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.87mH, IAS = 12.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.09 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA
VDS = 80 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA1.0 -- 2.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 6.4 A
VGS = 5 V, I D = 6.4 A -- 0.142
0.158 0.18
0.2 Ω
gFS Forward Transconduct ance VDS = 30 V, ID = 6.4 A -- 9.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520 pF
Coss Output Capacitance -- 95 125 pF
Crss Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
-- 7.5 25 ns
trTurn-On Rise T ime -- 220 450 ns
td(off) Turn-Off D e l a y Time -- 22 55 ns
tfTurn-Off Fall Time -- 72 150 ns
QgTotal Gate Ch arge VDS = 80 V, ID = 12.8 A,
VGS = 5 V
-- 8.7 12 nC
Qgs Gate-Source Charge -- 2.0 -- nC
Qgd Gate-Drain Charge -- 5.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12.8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 51.2 A
VSD Drain-Source Diode Forward V oltage VGS = 0 V, I S = 12.8 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 12.8 A,
dIF / dt = 100 A/µs
-- 75 -- ns
Qrr Reverse Recovery Charge -- 0.17 -- µC