BCR10CS-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) REJ03G0469-0200 Rev.2.00 Nov.12.2004 Features * Non-Insulated Type * Planar Passivation Type * IT (RMS) : 10 A * VDRM : 600 V * IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note6 Outline TO-220S 4 1 2, 4 3 2 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.12.2004, page 1 of 7 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg -- 5 0.5 10 2 - 40 to +150 - 40 to +150 1.2 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Conditions Commercial frequency, sine full wave Note3 360 conduction, Tc = 128C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note6 30Note6 30Note6 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 -- -- -- -- 1.8 V C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 -- -- V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 5.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.12.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150C 101 7 5 3 2 Tj = 25C 100 0.5 Gate Voltage (V) 5 3 2 101 7 5 3 2 1.0 1.5 2.0 2.5 3.0 3.5 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W VGT = 1.5V PG(AV) = 0.5W IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III 10-1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 80 0 100 4.0 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 7 5 103 Typical Example 7 5 3 IRGT I, IRGT III 2 102 7 5 IFGT I 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Rev.2.00, Rated Surge On-State Current Nov.12.2004, page 3 of 7 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Allowable Case Temperature vs. RMS On-State Current 160 28 140 24 360 Conduction Resistive, 20 inductive loads 16 12 8 4 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) 0 2 4 6 8 10 12 14 16 120 Curves apply regardless of 100 conduction angle 80 60 40 360 Conduction 20 Resistive, inductive loads 0 4 8 0 2 6 10 12 14 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 x 120 x t2.3 120 100 x 100 x t2.3 100 60 x 60 x t2.3 80 All fins are black 60 painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 2 4 6 8 10 12 14 120 100 80 60 40 20 0 16 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 16 RMS On-State Current (A) Ambient Temperature (C) Ambient Temperature (C) 0 Rev.2.00, Case Temperature (C) 32 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Nov.12.2004, page 4 of 7 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Breakover Voltage vs. Junction Temperature Distribution 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 0 40 80 120 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 160 Typical Example Tj = 150C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125C) Commutation Characteristics (Tj=150C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Minimum Characteristics Value Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 2 100 7 0 10 III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00, 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 100 -40 Critical Rate of Rise of Off-State Commutating Voltage (V/s) T2+, G- Typical Example Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 103 7 5 3 2 Nov.12.2004, page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Latching Current (mA) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 2 III Quadrant Minimum 100 Characteristics Value 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 A 6V V V 6 A V 330 Test Procedure III Rev.2.00, Nov.12.2004, 330 Test Procedure II Test Procedure I 6V R1 A 6V 330 page 6 of 7 C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 BCR10CS-12L (The product guaranteed maximum junction temperature of 150C) Package Dimensions TO-220S EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 1.2 Cu alloy 10.5 max 1.3 9.8 0.5 0 +0.3 -0 (1.5) 3.0 +0.3 - 0.5 1.5 max 8.6 0.3 1.5 max 4.5 1 5 0.5 4.5 0.8 Symbol Dimension in Millimeters Min Typ Max 2.6 0.4 A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 1000 Standard order code Type name +B - T +Direction (1 or 2) +1 50 Type name +B Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.12.2004, page 7 of 7 Standard order code example BCR10CS-12LB-T11 BCR10CS-12LB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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