~ 60 - FE & XK BZ ms 8 4 tH (Ta=25%) | # 6) Mm @ [we we (al | vee less Ipss Vos (oft) gn y & max) | Yas | (min)] (max) |ps | (min)|(max)!ps | Ip (min) | (typ) Vos | Ip. { Ey WW) | +k (A) (VW) | (a) | a) 1) | WW) Ww) a) | @) (S) (s) (Vv) | (A) 2SK648 FE Ku-Band LN GaAs/MES|N|D ~6|6D0 [-tou) -3/ 20m] 120m] 3 -3.5| 3] 1002] 20m] 50m) 8! 10m 2SK649 iF Ku-Band PA/OSC |GaAs/MES|N|D -6| Gb0 102) -3| 40m) 80m| 3 -3.5| 3) 1002) 20m) 40m) 3) tom aSK650 HAE RF LN A SB nip ~6/GD0 -102] -3| 20m) 120nf 3] -0.3) -3.5/ 3] 100%] 20m) 50m) 3] 10m 2SKB51 WF RF LWA SB wip | -6/p0 D -102| ~3] 40m; 150m] 3) -1] 3.5] 3] 100~] 20m) 40m 3] 10m 2SKB52 AE LF A, SW J nip | -s5[cp0 G =10n| -30/ 1m) 20m| 10 -s| 10! 10u{ 25m) 7.5m, 10} ipss 2SK653 BE RP fevavtal LN A GaAs/MES| N D 5)DS ID | ~80); -3) 15m) 50m} 3 ~4] 3 500u 40m) 15m) 3] 20m ISK654, 654-2 [NEC SH js nie | toolpss D 100n] +15 j1ow] 80] 1] 3] 10] tm) 08 10) 0.5 2SK655 BE SH MOS NE 50/ DSS D 50n 8 10u/ 10; 1.5) 3.5 ves! 100| 20m 35mi 5! 20m 2SK656 EE SW Mos NIE 50|DS [o| soul al [oz] 10} 1.5) as! vas] too] 20m) 35m] 5] 20m 2SK657 AF SW ws INE 50 | DSS D Su] 8 row] 10] 1.5) 3.5] Os) 100] 20m 5) 20m 2SK658 mF SW wos [NE | 20|Ds | sou) 8 iu) 10) I sf 3.5| vas) 100~| 20m] | 5] 20m 2SK659 NEC SW MOS NIE 60! pss D +100n] 20 ion] 60] 1] 25] 10/ aml 8] 10] 10 6 2SK660 NEC ECM Imp~C J nip | -20/Gp0 1on|G} 100m gon (s00n| 5 -l os) 1 fo. 15m) Taal a 1DSs 2SK661 NEC [C-MIC Imp-C J nJp | -20/G0 10m|/G] 80m t 60u/500u| 5 ~1{ 5] twfo.1sm| 1.2mf 5] IDss askes2 AA LEA J wjo | 30/600; | | _tom/c] 150m] -100n) -80| 0.5m) 12m] 10] -0.1) -1.5] 10) 10] 4m] 12m] 10] IDss askess [ESF LF A, SW J n[p | -ss[cvo[ -ssfo| 10m[c/ 150m] -10n[ -30/ 1m| 20n/ 10] -5] 10] 10@| 2.) 7.5m 10) 6m asKes4 LEAF SW wos IniE | _50/pss/_ s/o ioom|D] 150m} Son; 8 10a} 10) 1.5) 3.8] vcs] 1002] 20m) 5] 20n 2SK665 WE SW MOS wie 20|ps 80} 100m)d| isom) son] 8 tow) 10) 1.5) 3.5] ves) 100%] 20m 5) 20m 2SK666 ar V/UHE A GaAs /MES |N|D bp) 200m|-1002/ -3 son} 85m/ 3 200m 2SK667 EF SK MOS NIE 5 |o[ 80 iz} 20 tm) 2.5] 3.5) 25 5| 2SK668 __| Aw U/SIIF LN A GaAs/MES | N|D [Yi D 150m) 104 6 100 2 15m) 35m 5 20m 2SK669 Se AS SH, A-SH, LPF [NOS [N/E 50|pS | +12] | 100m/D| 200m] ton| 10 0) 100m) 25m) 40m 10/ 50m asKeTh yc ~X-Band RE/MIX |Gaas [NID | 5. 5)DSX} 4.5/0] 120m/D) 300m] -10~/ ~4.5} 35m! 95mi 3) -1| -3.5/ 31 1002/ 20m) 28m) 3! 10m 2SK672 ee HS. SW, DDC MOS fe | so[psx} +20[s] t0[p| 40/+t00n] +20 0.3m] 60; 1.5) 3.5] 10, im] 1.8) 2.8| 10 2SK673 wee HS SH, DDC MOS ne | solpsx! t20ls) isip) 75{+100n) +20 0.3m) 60] 1.5 3.5, 10) im) 3.5] 5) 10 8 2SK6T4 ee HS SW, DDC MOS wle solpsx! +20ls| 25|p! 100{+190n) +20 o.3m} 60; 4.5) 3.5} 20) im) 8) 11] 10) 15 aske76 YE ~X-Band RE/MIX [GaAs [NID s{psx] -3.5]o] 70n[p} a40n]-1002{ -3/ 10m] 7onf 2) -0.2| -3/ 2] 500! 26m] 40m) 2] 10m ask676H5 = WW LN A ip 5[ps | -3.5]0| Tom|p| ~190; -3] 10m] 70m] 2[ -0.2) -3} 2] 500] 25m] 40m) 2) 10m asker? y= |S XeBand RF/MIX hijo | s[osx{_-s.s|0] to0n/o 340n[-190] 8] 15m, 100m) 2) -0.2)-8) 2) $00) 97m) 60m] 2] 15m 2SK6TTHS yo MW LN A NID 5|pS | -3.5/0| 100m/D -150| 3] 16m) 100m) 2] -0.2/ ~3| 2] 500] 37m) 60m] 2/15]- 61 - [ a a ee j [cis crs NE 4 Rps (ON) | 2778) ge @ (typ) | (typ) Ives Vos jtyp|max| f Re. (max) Yes | Ip ZO th te tt ae & xvay wey | GE LOS LaF jaa) dey |) | CO) | 1,812.3 126 APG=8dBmin/10, SdBtyp f=12GHz 210|DSGS 2SK648 4.5 126 APG=6dBtyp, MAG=5dBmin f=12GHz 210|DSGS 2SK649 0.6 -6 3 2 4G 211) DSGS 2SK650 0.6 -6 3 4 4G Jot oy 211|DSGS 2SK651 6.5 1.9 0) 10)0.5 100} 100k 213B(DGS 2SK652 2.5/3.2! 600M PG1=9dB, PG2=13dBtyp 1=600MHz, f2=50MHz 212| SD&G 2SK653 120 24 0 10) 3; 10 0. 5] ton=12ns, toff=linstyp ID=0. 5A, VDD=50 276/20: 281|Z:M7" Yah ICA | 28K654, 654-2 10 0.5 i] 5 50 5 20m} ton=10ns, toff=20nstyp | VDD=5, RD=200Q 213A| SDG 28K655 9 1.1 0} 10 50 5 20m| ton=toff=lus YDD=5, RD=2002 218A) SDG 2SK656 15max Imax 0 5 50 5 20m} ton=10ns, toff=20nstyp YDD=5V, RD=200Q 214/GDS 2SK657 50 5 20m| ton=toff=lus YDD=5V, RD=200Q 214|GDS 2SK658 1300 260 Oo} 10 0.075} 10 6|ton=90ns, toff=160nstyp | 1D=6A, VDD=30 2741 GDS 2SK659 [ 6max 0 5 | [Coss=3pFmax YDS=5V, VGS=0 104B) DGS 2SK660 max 0 5 Cos=$pFmax VOS=5V, VGS=0 88 | SDG 2SK661 14 3.5 Oo} 10 N=60mVtyp Gv=80dB, Rg=100kQ, Flat 233) SDG 2SK662 6.5 1. 3| 0) 1012.5 100} 100k 233) SGD 2SK663 | ts dmax 0 5 50 5 20m{ton=10ns, toff=20nstyp VDD=5, RD=200Q 233/SGD 2SK664 50 5 20m| ton=toff=1 4 smax YDD=SV, RD=200Q 233) SGD 2SK665 2.7/3.5] 900M NF=2. 8dB, PG=12. 5dBtyp =50MHz 175B)GSDS 2SK666 600 0} 20 1.5) 15 5 191) GDS, FRBFZSK765 | 2SK66T 2.5)3.5 3G PG=8dBmin/10dBtyp f=3GHz 199B| 2SK457 chip 2SK668 15 0. 5 0; 10 20typ) 10 10m) Coss=6pF typ YGS=0, VDS=10 157A| DGS 2SK669 | 3.5 126 Ga=9dBtyp f=12GHz 188) GSDS 2SK671 370 85 Oo] 10 0.2) 10 5 [ 183|GDS 2SK672 650 150 0; 10 0.11} 10 8 183|GDS 2SKET3 1200 320 of; ie 0.06} 10 45, 1831)GDS 28K674 1.4 126 Ga=11dBtyp f=12GHz 187/GSDS 2SK676 [ 14 126 Ga=9dBmin/11dBtyp f=12GHz fot 2SK676H5 | 1.4 126 Ga=11dBtyp f=12GHz 187|GSDS 2SK677 | [fal ue 1 I Ga=9dBmin/11dBtyp f=12GHz fa 25K61THS