
IRF1405ZS/L-7P
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Solder mounted on IMS substrate.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
e55––––––V
∆ΒVDSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.054 ––– V/°C
RDS(on) SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ
VGS(th) Gate Threshold Volta
e 2.0 ––– 4.0 V
fs Forward Transconductance 150 ––– ––– S
IDSS Drain-to-Source Leaka
e Current ––– ––– 20
A
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
QgTotal Gate Char
e ––– 150 230 nC
Qgs Gate-to-Source Char
e ––– 37 –––
Qgd Gate-to-Drain ("Miller") Char
e ––– 64 –––
td(on) Turn-On Dela
Time ––– 16 ––– ns
trRise Time ––– 140 –––
td(off) Turn-Off Dela
Time ––– 170 –––
tfFall Time ––– 130 –––
LDInternal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from packa
e
and center of die contact
Ciss Input Capacitance ––– 5360 ––– pF
Coss Output Capacitance ––– 1310 –––
Crss Reverse Transfer Capacitance ––– 340 –––
Coss Output Capacitance ––– 6080 –––
Coss Output Capacitance ––– 920 –––
Coss eff. Effective Output Capacitance ––– 1700 –––
Diode Characteristics
Parameter Min. T
p. Max. Units
ISContinuous Source Current ––– ––– 150
(Body Diode) A
ISM Pulsed Source Current ––– ––– 590
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time –––6395ns
Qrr Reverse Recover
Char
e ––– 160 240 nC
RG = 5.0Ω
ID = 88A
VDS = 25V, ID = 88A
VDD = 28V
ID = 88A
VGS = 20V
VGS = -20V
VDS = 44V
VGS = 10V
e
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
d
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 44V
ƒ = 1.0MHz, See Fig. 5
TJ = 25°C, IF = 88A, VDD = 28V
di/dt = 100A/
s
e
TJ = 25°C, IS = 88A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
VDS = VGS, ID = 150µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 88A
e