DXTB772
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for use in output stage amplifier, voltage
regulator, DC-DC converter and driver.
(1)Single pulse PW=1ms
(2)When tested in free air condition, without heat sinking.
(3)When mounted on a 40x40X1mm ceramic board.
(4)Printed circuit board 2mm thick, collector plating 1cm square or larger.
(5)Pulse Test: Pulse Width 380µs, Duty Cycle 2%.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1 2 3
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current (continuous) IC -3 A
Collector Current (pulse)(1) IC -7 A
Total Power Dissipation(2) PD 1 W
Total Power Dissipation(3) PD 2 W
Total Power Dissipation(4) PD 1.5 W
Junction Temperature TJ +150 oC
Storage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Volatge BVCBO -40 - - V IC=-100µA
Collector-Emitter Breakdown Voltage BVCEO -30 - - V IC=-1mA
Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA
Collector Cutoff Current ICBO - - -1 µA VCB=-30V
Emitter Cutoff Current IEBO - - -1 µA VEB=-3V
Collector-Emitter Saturation Voltage(5) VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
Base-Emitter Saturation Voltage(5) VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
DC Current Gain(5) hFE1 30 - - - IC=-20mA, VCE=-2V
hFE2 100 160 500 - IC=-1A, VCE=-2V
Transition Frequency fT - 80 - MHz IC=-100mA, VCE=-5V, f=100MHz
Output Capacitance Cob - 55 - pF VCB=-10V, f=1MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Rank Q P E
Range 100~200 160~320 250~500
Classification of hFE2
