BC857BV
Document number: DS30433 Rev. 7 - 2
1 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Complementary PNP Type Available (BC847BV)
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (Approximate)
Ordering Information (Note 4)
Part Number
Packaging
BC857BV-7
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Marking Information
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
P
R
S
T
U
V
W
X
Y
Z
A
B
C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Bottom View
Device Schematic
(Note 5)
C1B2E2
C2
E1B1
K5V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
K5V YM
SOT-563
SOT-563
BC857BV
Document number: DS30433 Rev. 7 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BC857BV
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-100
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
150
mW
Thermal Resistance, Junction to Ambient (Note 6)
RJA
833
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 7)
V(BR)CBO
-50
—
—
V
IC = 10µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 7)
V(BR)CEO
-45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 7)
V(BR)EBO
-5
—
—
V
IE = 1µA, IC = 0
DC Current Gain (Note 7)
hFE
220
290
475
—
VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 7)
VCE(SAT)
—
—
—
-100
-400
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 7)
VBE(SAT)
—
—
-700
-900
—
—
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 7)
VBE(ON)
-600
—
—
—
-750
-820
mV
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector Cut-Off Current (Note 7)
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = -30V
VCB = -30V, TA = +150°C
Gain Bandwidth Product
fT
100
—
—
MHz
VCE = -5.0V, IC = -10mA, f = 100MHz
Output Capacitance
COB
—
—
4.5
pF
VCB = -10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz
Notes: 6. Device mounted on FR-4 PCB, 1-inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BC857BV
Document number: DS30433 Rev. 7 - 2
3 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BC857BV
-50 050 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 2)
A°
P , POWER DISSIPATION (mW)
D
1
10
100
1,000
110 100 1,000
V = 5V
CE
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
0.1 10 100 1,000
V , COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5 I
IC
B= 10
10
100
1,000
110 100
f, GAIN-BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
V = 5V
CE
BC857BV
Document number: DS30433 Rev. 7 - 2
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March 2015
© Diodes Incorporated
BC857BV
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.20
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
-
-
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.55
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
A
M
L
BC
H
K
GD
X
Z
Y
C1
C2
C2
G
BC857BV
Document number: DS30433 Rev. 7 - 2
5 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BC857BV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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